Fin field effect transistor and method for fabricating the same
Fin field effect transistors (FinFETs) and method for fabricating the same are disclosed. One of the FinFETs includes a substrate, an insulator, first and second gates, an opening, first and second dielectric layers. The substrate includes first and second semiconductor fins and a trench therebetween. The insulator is disposed in the trench. The first and second gates are respectively disposed on the first and second semiconductor fins. The opening is disposed between the first gate and the second gate. The first dielectric layer is disposed in the opening to electrically insulate the first and second gates and includes a slit. The second dielectric layer is filled in the slit, wherein the opening has a first width in a direction along which the first and second gates extend, the slit has a second width in the direction, and a ratio of the first width to the second width is larger than 2.
1. A fin field effect transistor (FinFET), comprising:
a substrate comprising a first semiconductor fin, a second semiconductor fin and a trench between the first semiconductor fin and the second semiconductor fin;
an insulator disposed in the trench;
a first gate disposed on the first semiconductor fin;
a second gate disposed on the second semiconductor fin, wherein top surfaces of the first and second gates are above a top surface of the insulator;
an opening disposed between the first gate and the second gate and above the insulator;
a first dielectric layer disposed in the opening to electrically insulate the first gate and the second gate, wherein the first dielectric layer comprises a slit; and
a second dielectric layer filled in the slit, wherein the opening has a first width in a direction along which the first gate and the second gate extend, the slit has a second width in the direction, and a ratio of the first width to the second width is larger than 2.
2. The FinFET of claim 1 , wherein a top surface of the second dielectric layer is substantially coplanar with a top surface of the first dielectric layer.
3. The FinFET of claim 1 , wherein a top critical dimension of the opening is substantially equal to a bottom critical dimension of the opening.
4. The FinFET of claim 1 further comprising a third dielectric layer disposed between the first semiconductor fin and the first gate, between the second semiconductor fin and the second gate, and on sidewalls of the first dielectric layer.
5. The FinFET of claim 4 further comprising a fourth dielectric layer disposed between the first semiconductor fin and the third dielectric layer and between the second semiconductor fin and the third dielectric layer.
6. The FinFET of claim 4 , wherein a material of the second dielectric layer and a material of the third dielectric layer are the same.
7. A fin field effect transistor (FinFET), comprising:
a substrate comprising a first semiconductor fin, a second semiconductor fin and a trench between the first semiconductor fin and the second semiconductor fin, wherein the first semiconductor fin is extended in a first direction and has a height in a second direction perpendicular to the first direction;
an insulator disposed in the trench;
a first gate disposed on the first semiconductor fin;
a second gate disposed on the second semiconductor fin;
an opening disposed between the first gate and the second gate and over the insulator;
a first dielectric layer disposed in the opening to electrically insulate the first gate and the second gate, wherein the first dielectric layer comprises a slit; and
a second dielectric layer filled in the slit, wherein the slit has an aspect ratio larger than 10, wherein the first dielectric layer is disposed over and partially overlapped with the insulator in the second direction.
8. The FinFET of claim 7 , wherein a top surface of the second dielectric layer is substantially coplanar with a top surface of the first dielectric layer.
9. The FinFET of claim 7 , wherein the opening has a first width in a direction along which the first gate and the second gate extend, the slit has a second width in the direction, and a ratio of the first width to the second width is larger than 2.
10. The FinFET of claim 7 , wherein a top critical dimension of the opening is substantially equal to a bottom critical dimension of the opening.
11. The FinFET of claim 7 further comprising a third dielectric layer disposed between the first semiconductor fin and the first gate, between the second semiconductor fin and the second gate, and on sidewalls of the first dielectric layer.
12. The FinFET of claim 11 further comprising a fourth dielectric layer disposed between the first semiconductor fin and the second dielectric layer and between the second semiconductor fin and the second dielectric layer.
13. The FinFET of claim 11 , wherein a material of the second dielectric layer and a material of the third dielectric layer are the same.