Semiconductor device, module, and electronic device
View Patent ↗Provided is a semiconductor device including a first insulator, a second insulator, a first oxide semiconductor, a second oxide semiconductor, a first conductor, and a second conductor. The first oxide semiconductor is over the first insulator. The second oxide semiconductor is over the first oxide semiconductor. The first conductor includes a region in contact with a top surface of the second oxide semiconductor. The second insulator includes a region in contact with the top surface of the second oxide semiconductor. The second conductor is over the second oxide semiconductor with the second insulator therebetween. The second oxide semiconductor includes a first layer and a second layer. The first layer includes a region in contact with the first oxide semiconductor. The second layer includes a region in contact with the second insulator. The first layer has a lower proportion of oxygen vacancies than the second layer.
1. A semiconductor device comprising:
a first insulator;
a second insulator;
a first oxide semiconductor;
a second oxide semiconductor;
a first conductor; and
a second conductor,
wherein the first oxide semiconductor is over the first insulator,
wherein the second oxide semiconductor is over the first oxide semiconductor,
wherein the first conductor comprises a region in contact with a top surface of the second oxide semiconductor,
wherein the second insulator is over the second oxide semiconductor,
wherein the second conductor is over the second oxide semiconductor with the second insulator therebetween,
wherein the second oxide semiconductor comprises a first layer and a second layer,
wherein the first layer comprises a region in contact with the first oxide semiconductor,
wherein the second layer is over and in contact with the first layer, and
wherein the first layer has a lower proportion of oxygen vacancies than the second layer.
2. The semiconductor device according to claim 1 , further comprising a third oxide semiconductor between the second oxide semiconductor and the second insulator.
3. The semiconductor device according to claim 1 , further comprising a third insulator over and in contact with the first conductor.
4. The semiconductor device according to claim 1 , wherein the second oxide semiconductor is an oxide containing indium, an element M (M is aluminum, gallium, yttrium, or tin), and zinc.
5. A module comprising a printed board and the semiconductor device according to claim 1 .
6. An electronic device comprising at least one of a speaker, an operation key, a battery and the module according to claim 5 .
7. A semiconductor device comprising:
a first insulator;
a second insulator;
a first oxide semiconductor;
a second oxide semiconductor;
a first conductor; and
a second conductor,
wherein the first oxide semiconductor is over the first insulator,
wherein the second oxide semiconductor is over the first oxide semiconductor,
wherein the first conductor comprises a region in contact with a top surface of the second oxide semiconductor,
wherein the first conductor covers a side surface of the first oxide semiconductor,
wherein the second insulator is over the second oxide semiconductor,
wherein the second conductor is over the second oxide semiconductor with the second insulator therebetween,
wherein the second oxide semiconductor comprises a first layer and a second layer,
wherein the first layer comprises a region in contact with the first oxide semiconductor,
wherein the second layer is over and in contact with the first layer, and
wherein the first layer has a lower proportion of oxygen vacancies than the second layer.
8. The semiconductor device according to claim 7 , further comprising a third oxide semiconductor between the second oxide semiconductor and the second insulator.
9. The semiconductor device according to claim 7 , further comprising a third insulator over and in contact with the first conductor.
10. The semiconductor device according to claim 7 , wherein the second oxide semiconductor is an oxide containing indium, an element M (M is aluminum, gallium, yttrium, or tin), and zinc.
11. A module comprising a printed board and the semiconductor device according to claim 7 .
12. An electronic device comprising at least one of a speaker, an operation key, a battery and the module according to claim 11 .
13. A semiconductor device comprising:
a first insulator;
a second insulator;
a first oxide semiconductor;
a second oxide semiconductor;
a first conductor; and
a second conductor,
wherein the first oxide semiconductor is over the first insulator,
wherein the second oxide semiconductor is over the first oxide semiconductor,
wherein the first conductor comprises a region in contact with a top surface of the second oxide semiconductor,
wherein the second insulator is over the second oxide semiconductor,
wherein the second conductor is over the second oxide semiconductor with the second insulator therebetween,
wherein the second oxide semiconductor comprises a first layer and a second layer,
wherein the first layer comprises a region in contact with the first oxide semiconductor,
wherein the second layer is over and in contact with the first layer, and
wherein the second layer has higher carrier density than the first layer.
14. The semiconductor device according to claim 13 , further comprising a third oxide semiconductor between the second oxide semiconductor and the second insulator.
15. The semiconductor device according to claim 13 , further comprising a third insulator over and in contact with the first conductor.
16. The semiconductor device according to claim 13 , wherein the second oxide semiconductor is an oxide containing indium, an element M (M is aluminum, gallium, yttrium, or tin), and zinc.
17. A module comprising a printed board and the semiconductor device according to claim 13 .
18. An electronic device comprising at least one of a speaker, an operation key, a battery and the module according to claim 17 .