Nitride semiconductor light-emitting device with periodic gain active layers
A nitride semiconductor light-emitting device with periodic gain active layers includes an n-type semiconductor layer, a p-type semiconductor layer and a resonator. The device further includes a plurality of active layers disposed between the n-type and p-type semiconductor layers so as to correspond to a peak intensity position of light existing in the resonator and at least one interlayer disposed between the active layers. The active layer disposed at the p-type semiconductor layer side has a larger light emission intensity than the active layer disposed at the n-type semiconductor layer side.
1. A nitride semiconductor light-emitting device with periodic gain active layers, which includes an n-type semiconductor layer, a p-type semiconductor layer and a resonator, the device comprising:
two active layers disposed between the n-type and p-type semiconductor layers so as to correspond to a peak intensity position of light existing in the resonator, each active layer being formed by alternately stacking a plurality of quantum well layers each formed of GaInN and a plurality of barrier layers each formed of GaN one upon another, the active layers having respective light emission wavelengths equal to each other; and
at least one interlayer disposed between the active layers so as to be adjacent to the active layers, the interlayer having a larger thickness than the barrier layers and being formed of GaN, wherein Mg as a p-type impurity doped into the interlayer has a concentration of not more than 5×10 18 cm −3 ,
wherein the active layer disposed at the p-type semiconductor layer side has a larger light emission intensity than the active layer disposed at the n-type semiconductor layer side; and
wherein Mg as a p-type impurity doped into the active layer disposed at the p-type semiconductor layer side has a concentration ranging from 0.2 times to twice as high as a concentration of the Mg doped into the interlayer.
2. The device according to claim 1 , wherein the interlayer is thicker than the active layers.
3. The device according to claim 1 , wherein the interlayer includes a thicknesswise central part having a section into which Mg as a p-type impurity is doped.
4. A nitride semiconductor light-emitting device with periodic gain active layers, which includes an n-type semiconductor layer, a p-type semiconductor layer and a resonator, the device comprising:
two active layers disposed between the n-type and p-type semiconductor layers so as to correspond to a peak intensity position of light existing in the resonator, each active layer being formed by alternately stacking a plurality of quantum well layers each formed of GaInN and a plurality of barrier layers each formed of GaN one upon another, the active layers having respective light emission wavelengths equal to each other; and
at least one interlayer disposed between the active layers so as to be adjacent to the active layers, the interlayer having a larger thickness than the barrier layers and being formed of GaN, wherein Mg as a p-type impurity doped into the interlayer has a concentration of not more than 5×10 18 cm −3,
wherein an amount of positive holes and electrons injected into the active layer disposed at the p-type semiconductor layer side is larger than an amount of positive holes and electrons injected into the active layer disposed at the n-type semiconductor layer side; and
wherein Mg as a p-type impurity doped into the active layer disposed at the p-type semiconductor layer side has a concentration ranging from 0.2 times to twice as high as a concentration of the Mg doped into the interlayer.
5. The device according to claim 4 , wherein the interlayer is thicker than the active layers.
6. The device according to claim 4 , wherein the interlayer includes a thicknesswise central part having a section into which Mg as a p-type impurity is doped.