Resist composition, method of forming resist pattern, compound, and acid diffusion control agent
A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid, and a compound (D1) represented by general formula (d1), wherein Z − represents an anion having an aromatic ring containing a hydroxybenzoic acid skeleton, provided that at least one hydrogen atom of the aromatic ring has been substituted with a halogen atom; m represents an integer of 1 or more; and M m+ represents an organic cation having a valency of m. Z − (M m+ ) 1/m (d1)
1. A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid, and a compound (D1) represented by general formula (d1) shown below:
Z − (M m+ ) 1/m (d1)
wherein Z − represents an anion having an aromatic ring containing a hydroxybenzoic acid skeleton, provided that at least one hydrogen atom of the aromatic ring has been substituted with a halogen atom; m represents an integer of 1 or more; and M m+ represents an organic cation having a valency of m.
2. The resist composition according to claim 1 , wherein the acid dissociation constant pKa of the conjugate acid of the compound (D1) is less than 3.
3. The resist composition according to claim 1 , wherein the octanol/water partition coefficient (log P ow ) of the compound (D1) is 1.5 or more.
4. The resist composition according to claim 1 , wherein Z − is an anion represented by formula (d1-a) shown below:
wherein Rh represents a halogen atom; and d0 represents an integer of 1 to 4.
5. The resist composition according to claim 4 , wherein Rh represents a fluorine atom.
6. The resist composition according to claim 1 , wherein the compound (D1) is represented by general formula (d1-10) shown below:
wherein R 201 to R 203 each independently represents an aryl group, an alkyl group or an alkenyl group, provided that two of R 201 to R 203 may be mutually bonded to form a ring with the sulfur atom; Rh represents a halogen atom; and d0 represents an integer of 1 to 4.
7. The resist composition according to claim 6 , wherein Rh represents a fluorine atom.
8. The resist composition according to claim 1 , further comprising an acid generator component (B) which generates acid upon exposure, provided that the acid generator component (B) excludes the compound (D1).
9. The resist composition according to claim 1 , wherein the base component (A) comprises a polymeric compound (A1), and
the polymeric compound (A1) comprises a structural unit (a1) containing an acid decomposable group that exhibits increased polarity by the action of acid.
10. A method of forming a resist pattern, comprising:
using a resist composition of claim 1 to form a resist film,
exposing the resist film, and
developing the exposed resist film to form a resist pattern.