Manufacturing method for semiconductor device
View Patent ↗A semiconductor device including an oxide conductor with high conductivity and high transmittance is provided. A manufacturing method for a semiconductor device includes the steps of: forming an oxide semiconductor over a first insulator; forming a second insulator over the first insulator and the oxide semiconductor; forming a first conductor over the second insulator; forming an etching mask over the first conductor; forming a second conductor including a region overlapping with the oxide semiconductor by etching the first conductor with use of the etching mask as a mask; removing the etching mask; and performing heat treatment after forming a hydrogen-containing layer over the second insulator and the second conductor.
1. A method for manufacturing a semiconductor device, comprising:
forming an oxide semiconductor over a first insulator;
forming a second insulator over the first insulator and the oxide semiconductor;
forming a first conductor over the second insulator;
forming a second conductor including a region overlapping with the oxide semiconductor by processing the first conductor; and
performing heat treatment after forming a hydrogen-containing layer over the second insulator and the second conductor.
2. The method according to claim 1 , further comprising:
forming a third insulator in contact with a side surface of the second conductor before forming the hydrogen-containing layer.
3. The method according to claim 1 , further comprising:
adding an ion to the oxide semiconductor before forming the hydrogen-containing layer.
4. The method according to claim 1 , wherein the oxide semiconductor includes indium and zinc.
5. The method according to claim 1 , wherein the second insulator includes at least one of silicon oxide and silicon oxynitride.
6. The method according to claim 1 , wherein a hydrogen concentration of the hydrogen-containing layer measured by secondary ion mass spectrometry before the heat treatment is in a range of 1×10 21 atoms/cm 3 or higher and 5×10 22 atoms/cm 3 or lower.
7. The method according to claim 1 , wherein the hydrogen-containing layer includes at least one of amorphous silicon and a hydrogen compound of a metal.
8. A method for manufacturing a semiconductor device, comprising:
forming a first conductor over a first insulator;
forming a second insulator over the first insulator and the first conductor;
forming a first oxide semiconductor and a second oxide semiconductor over the second insulator;
forming a third insulator over the second insulator and the first oxide semiconductor;
forming a fourth insulator over the second oxide semiconductor and the third insulator; and
performing heat treatment after forming a hydrogen-containing layer over the fourth insulator.
9. The method according to claim 8 , further comprising:
adding an ion to the second oxide semiconductor before forming the hydrogen-containing layer.
10. The method according to claim 8 , further comprising:
removing the hydrogen-containing layer after the heat treatment;
forming a second conductor over the fourth insulator; and
forming a third conductor including a region overlapping with the second oxide semiconductor by processing the second conductor.
11. The method according to claim 8 , further comprising:
forming a fourth conductor including a region overlapping with the second oxide semiconductor by processing the hydrogen-containing layer.
12. The method according to claim 8 , wherein each of the first oxide semiconductor and the second oxide semiconductor includes indium and zinc.
13. The method according to claim 8 , wherein the third insulator has a function of blocking hydrogen.
14. The method according to claim 8 , wherein the fourth insulator includes at least one of silicon oxide and silicon oxynitride.
15. The method according to claim 8 , wherein a hydrogen concentration of the hydrogen-containing layer measured by secondary ion mass spectrometry before the heat treatment is in a range of 1×10 21 atoms/cm 3 or higher and 5×10 22 atoms/cm 3 or lower.
16. The method according to claim 8 , wherein the hydrogen-containing layer includes at least one of amorphous silicon and a hydrogen compound of a metal.
17. A method for manufacturing a semiconductor device, comprising:
forming an oxide semiconductor;
forming an insulator over the oxide semiconductor;
forming a conductor over the insulator, the conductor including a region overlapping with the oxide semiconductor;
forming a hydrogen-containing layer over the insulator and the conductor; and
performing heat treatment on the hydrogen-containing layer at a temperature in a range of 150° C. or higher and 450° C. or lower.
18. The method according to claim 17 , further comprising:
forming a second insulator in contact with a side surface of the conductor before forming the hydrogen-containing layer.
19. The method according to claim 17 , further comprising:
adding an ion to the oxide semiconductor before forming the hydrogen-containing layer.
20. The method according to claim 17 , wherein the oxide semiconductor includes indium and zinc.
21. The method according to claim 17 , wherein the insulator includes at least one of silicon oxide and silicon oxynitride.
22. The method according to claim 17 , wherein a hydrogen concentration of the hydrogen-containing layer measured by secondary ion mass spectrometry before the heat treatment is in a range of 1×10 21 atoms/cm 3 or higher and 5×10 22 atoms/cm 3 or lower.
23. The method according to claim 17 , wherein the hydrogen-containing layer includes at least one of amorphous silicon and a hydrogen compound of a metal.
24. A method for manufacturing a semiconductor device, comprising:
forming a first conductor;
forming a first insulator over the first conductor;
forming a first oxide semiconductor and a second oxide semiconductor over the first insulator;
forming a second insulator over the first insulator and the first oxide semiconductor;
forming a third insulator over the second oxide semiconductor and the second insulator;
forming a hydrogen-containing layer over the third insulator; and
performing heat treatment on the hydrogen-containing layer at a temperature in a range of 150° C. or higher and 450° C. or lower.
25. The method according to claim 24 , further comprising:
adding an ion to the second oxide semiconductor before forming the hydrogen-containing layer.
26. The method according to claim 24 , further comprising:
removing the hydrogen-containing layer after the heat treatment; and
forming a second conductor over the third insulator, the second conductor including a region overlapping with the second oxide semiconductor.
27. The method according to claim 24 , further comprising:
forming a third conductor including a region overlapping with the second oxide semiconductor by processing the hydrogen-containing layer.
28. The method according to claim 24 , wherein each of the first oxide semiconductor and the second oxide semiconductor includes indium and zinc.
29. The method according to claim 24 , wherein the second insulator has a function of blocking hydrogen.
30. The method according to claim 24 , wherein the third insulator includes at least one of silicon oxide and silicon oxynitride.
31. The method according to claim 24 , wherein a hydrogen concentration of the hydrogen-containing layer measured by secondary ion mass spectrometry before the heat treatment is in a range of 1×10 21 atoms/cm 3 or higher and 5×10 22 atoms/cm 3 or lower.
32. The method according to claim 24 , wherein the hydrogen-containing layer includes at least one of amorphous silicon and a hydrogen compound of a metal.