Solid-state materials formed of molecular clusters and method of forming same
A solid-state material comprising a solid-state compound is provided. The solid-state compound has the formula: [Cluster1][Cluster2] n , where Cluster1 can be a metal chalcogenide molecular cluster, Cluster2 a carbon cluster, and n the number of Cluster2 clusters in the solid-state compound. A method of forming a solid-state material is also provided.
1. A solid-state material comprising a solid-state compound having the formula:
[Cluster1][Cluster2] n
wherein
Cluster1 comprises Co 6 Se 8 (PEt 3 ) 6 ;
Cluster2 comprises a carbon cluster;
n is the number of Cluster2 clusters in the solid-state compound and n is greater than or equal to 1; and
Cluster1 and Cluster2 are arranged in a binary assembly by charge transfer to form the solid-state material.
2. The solid-state material of claim 1 , wherein the Cluster2 comprises C 60 and n is 2.
3. The solid-state material of claim 2 , wherein the solid-state material is assembled into a superatomic relative of a CdI 2 structure.
4. The solid-state material of claim 2 , wherein the solid-state material comprises hexagonal arrays of C 60 in a chair-like arrangement that is separated by layers of the Co 6 Se 8 (PEt 3 ) 6 clusters.
5. The solid-state material of claim 2 , wherein the solid-state material includes at least two C 60 layers spaced apart by about 12.5 Å.
6. The solid-state material of claim 2 , wherein the solid-state material includes at least two C 60 s having a centroid-to-centroid distance about 9.9 Å and a shortest non-bonded C—C spacing of about 3.4 Å.
7. The solid-state material of claim 2 , wherein each Co 6 Se 8 (PEt 3 ) 6 cluster transfers two electrons and each C 60 cluster receives one electron.
8. The solid-state material of claim 2 , wherein the solid state material has a thermal activation energy of about 150 meV.
9. The solid-state material of claim 1 , wherein the solid-state material is used in an electronic material.
10. The solid-state material of claim 1 , wherein the solid-state material is used in a flexible electronic material.
11. A solid-state material comprising a solid-state compound having the formula:
[Cluster1][Cluster2] n ,
wherein
Cluster1 comprises Cr 6 Te 8 (PEt 3 ) 6 ;
Cluster2 comprises a carbon cluster;
n is the number of Cluster2 clusters in the solid-state compound and n is greater than or equal to 1; and
Cluster1 and Cluster2 are arranged in a binary assembly by charge transfer to form the solid-state material.
12. The solid-state material of claim 11 , wherein the Cluster2 comprises C 60 and n is 2.
13. The solid-state material of claim 12 , wherein the solid-state material is assembled into a superatomic relative of a CdI 2 structure.
14. The solid-state material of claim 12 , wherein the solid-state material comprises hexagonal arrays of C 60 in a chair-like arrangement that is separated by layers of the Cr 6 Te 8 (PEt 3 ) 6 clusters.
15. The solid-state material of claim 12 , wherein the solid-state material includes at least two C 60 layers spaced apart by about 12.3 Å.
16. The solid-state material of claim 12 , wherein the solid-state material includes at least two C 60 s having a centroid-to-centroid distance about 10.3 Å and a shortest non-bonded C—C spacing of about 3.7 Å.
17. The solid-state material of claim 12 , wherein each Cr 6 Te 8 (PEt 3 ) 6 cluster transfers two electrons and each C 60 cluster receives one electron.
18. The solid-state material of claim 12 , wherein the solid state material has a thermal activation energy of about 100 meV.
19. A solid-state material comprising a solid-state compound having the formula:
[Cluster1][Cluster2] n ,
wherein
Cluster1 comprises Ni 9 Te 6 (PEt 3 ) 8 ;
Cluster2 comprises a carbon cluster;
n is the number of Cluster2 clusters in the solid-state compound and n is greater than or equal to 1; and
Cluster1 and Cluster2 are arranged in a binary assembly by charge transfer to form the solid-state material.
20. The solid-state material of claim 19 , wherein the Cluster2 comprises C 60 and n is 1.
21. The solid-state material of claim 19 , wherein the solid-state material is assembled into a rock-salt crystal structure.
22. The solid-state material of claim 21 , wherein the solid-state material comprises a face centered cubic structure.
23. The solid-state material of claim 22 , wherein the cubic structure has a lattice parameter of about 21.7 Å.
24. A method of forming a solid-state material comprising:
a) dissolving a metal chalcogenide molecular cluster in toluene;
b) dissolving a carbon cluster in toluene; and
c) combining the metal chalcogenide molecular cluster and the carbon cluster to form a solid-state material comprising a solid-state compound having the formula:
[Cluster1][Cluster2] n ,
wherein
Cluster1 comprises one of Co 6 Se 8 (PEt 3 ) 6 ,
Cr 6 Te 8 (PEt 3 ) 6 , and Ni 9 Te 6 (PEt 3 ) 8 ;
Cluster2 comprises the carbon cluster;
n is the number of Cluster2 clusters in the solid-state compound and n is greater than or equal to 1; and
Cluster1 and Cluster2 are arranged in a binary assembly by charge transfer to form the solid-state material.
25. The method of claim 24 , further comprising decanting a supernatant after combining the metal chalcogenide molecular cluster and the carbon cluster.
26. The method of claim 25 , further comprising washing a remaining solid with toluene after decanting.
27. The method of claim 26 , further comprising drying the remaining solid under vacuum after washing.
28. The method of claim 27 , wherein the drying comprises drying for about 12 hours.