Magnetic element, skyrmion memory, skyrmion memory-device, solid-state electronic device, data-storage device, data processing and communication device

1. A magnetic element capable of transferring a skyrmion, comprising:

a magnet in a thin layer shape surrounded by a non-magnetic material;

an upstream electrode being a non-magnetic metal connected to a spreading direction of the magnet;

a downstream electrode being a non-magnetic metal connected to a spreading direction of the magnet separately from the upstream electrode; and

a skyrmion sensor that detects a position of the skyrmion, wherein

the magnet has a plurality of stable positions in which the skyrmion exists more stably than in other regions of the magnet, and

a transferring configuration with a direction perpendicular to a current direction is provided in which a direction in which a current flowing between the upstream electrode and the downstream electrode is arranged substantially perpendicular to a direction in which one or more skyrmions are transferred.

2. The magnetic element according to claim 1 , wherein the plurality of stable positions are provided in a region sandwiched between the upstream electrode and the downstream electrode in the magnet.

3. The magnetic element according to claim 2 , wherein the plurality of stable positions are arrayed in a direction substantially orthogonal to an orientation of a current flowing between the upstream electrode and the downstream electrode.

4. The magnetic element according to claim 3 , wherein the magnet exhibits at least a skyrmion crystal phase in which the skyrmion is generated and a ferromagnetic phase, according to an applied magnetic field.

5. The magnetic element according to claim 3 , wherein the magnet is made from one of a chiral magnet, a dipole magnet, a frustrated magnet, and a stacking structure of a magnetic material and a non-magnetic material.

6. The magnetic element according to claim 3 , wherein

the skyrmion sensor has, in one plane of the magnet, a stacking structure of a non-magnetic insulator thin film contacting a surface of the magnet and a magnetic metal provided on the non-magnetic insulator thin film, and

in the stacking structure, a resistance value changes according to the position of the skyrmion.

7. The magnetic element according to claim 6 , wherein the skyrmion sensor is positioned in at least one stable position out of the plurality of stable positions between the upstream electrode and the downstream electrode.

8. The magnetic element according to claim 3 , wherein a height Hm of the magnet sandwiched between the upstream electrode and the downstream electrode is such that 3·λ>Hm≧λ/2, where λ denotes a diameter of the skyrmion to be generated in the magnet.

9. The magnetic element according to claim 3 , wherein

each of the upstream electrode and the downstream electrode has a position with a notch structure that protrudes toward the inside of the magnet, and

each region of the magnet divided by each of the positions with a notch structure functions as the stable position.

10. The magnetic element according to claim 3 , wherein a distance between the respective stable positions in the plurality of stable positions is such that λ/2>d2≧λ/10, where λ denotes a diameter of the skyrmion to be generated in the magnet.

11. A skyrmion memory, comprising:

the magnetic element according to claim 3 ;

a generating unit of magnetic field that is provided opposite to the magnet, and is capable of applying a magnetic field to the magnet;

a current path that is connected to the upstream electrode and the downstream electrode, and applies a pulse current to the magnet between the upstream electrode and the downstream electrode; and

a measuring unit that is connected to the skyrmion sensor, and detects the position of the skyrmion based on a detection result of the skyrmion sensor.

12. The skyrmion memory according to claim 11 , wherein

the magnet has a closed-path pattern, and

the plurality of stable positions are arrayed so as to make one circuit of the closed-path pattern of the magnet.

13. The skyrmion memory according to claim 11 , wherein

the skyrmion is transferred from a first stable position to a second stable position by causing a positive current pulse to transfer a skyrmion to flow between the upstream electrode and the downstream electrode, and

the skyrmion is transferred from the second stable position to the first stable position by causing a negative current pulse to transfer a skyrmion to flow between the upstream electrode and the downstream electrode.

14. The skyrmion memory according to claim 11 , wherein in the generating unit of magnetic field, a film thickness of the magnet in a region opposite to the stable position is thinner compared to that in other regions.

15. The skyrmion memory according to claim 11 , having a plurality of the magnetic elements stacked in a thickness direction.

16. A skyrmion memory device comprising:

the plurality of skyrmion memories according to claim 11 ,

a plurality of electric lines to transfer a skyrmion that are connected to the plurality of skyrmion memories, and supply, to the respective skyrmion memories corresponding thereto, a current to transfer a skyrmion that transfers the skyrmion between the plurality of stable positions;

a plurality of word lines to read a skyrmion that are connected to the plurality of skyrmion memories, and transmit a voltage or a current according to the position of the skyrmion of the respective skyrmion memories corresponding thereto;

a plurality of switches that are provided to the plurality of electric lines to transfer a skyrmion and the plurality of word lines to read a skyrmion, and select the skyrmion memory; and

a detection circuit that detects the position of the skyrmion in the skyrmion memory selected by the plurality of switches based on the current or the voltage flowing through the plurality of word lines to read a skyrmion.

17. The skyrmion memory device according to claim 16 , wherein

a first electric line to transfer a skyrmion out of the plurality of electric lines to transfer a skyrmion is connected to the upstream electrode of the corresponding skyrmion memory,

a second electric line to transfer a skyrmion out of the plurality of electric lines to transfer a skyrmion is connected to the downstream electrode of the corresponding skyrmion memory,

the respective word lines to read a skyrmion are connected the skyrmion sensor of the corresponding skyrmion memory,

the plurality of switches select the corresponding first electric line to transfer a skyrmion and the corresponding second electric line to transfer a skyrmion in a case where the skyrmion is transferred or erased in one of the skyrmion memories, select one of the corresponding first electric line to transfer a skyrmion and the corresponding second electric line to transfer a skyrmion, and also select the corresponding word line to read a skyrmion in a case where the presence or absence of the skyrmion is detected in one of the skyrmion memories.

18. A data recording apparatus on which the skyrmion memory device according to claim 16 is mounted.

19. A data processing apparatus on which the skyrmion memory device according to claim 16 is mounted.

20. A communication apparatus on which the skyrmion memory device according to claim 16 is mounted.