Integrated substrate defect detection using precision coating
Apparatuses and methods for improved substrate defect detection is provided. Substrate defects may be detected, possibly with defect detection equipment such as laser metrology equipment. Defects smaller than the detection limit of the detection equipment may be decorated with a layer of material to increase the effective sizes of the defects. The thickness and composition of the material deposited may be tuned depending on the composition of the substrate and the defects. The composition of the detected defects may be identified with defect identification equipment. The defect identification equipment may be an electron generating apparatus and the composition of the defects may be identified from the interaction of the electrons with the defect. The deposited material may be removed either before or during the defect identification phase to aid in the identification of the defect composition.
1. A method comprising:
(a) depositing a layer of material onto a substrate containing a plurality of particles, wherein the layer of material is deposited on at least a portion of a particle of the plurality of particles;
(b) detecting, with metrology equipment comprising a laser, a location of the particle on the substrate on which the layer of material has been deposited; and
(c) identifying, through the layer of material deposited on the particle, a composition of the particle.
2. The method of claim 1 , further comprising (d) removing, after (c), at least a portion of the material deposited on the particle.
3. The method of claim 2 , wherein the at least a portion of the material in (d) is removed via Atomic Layer Etching (ALE), reactive ion etching, or ion milling.
4. The method of claim 1 , wherein (c) comprises identifying the composition of the particle via X-Rays from electrons interacting with the particle.
5. The method of claim 1 , wherein the layer of material is deposited around the particles.
6. The method of claim 1 , further comprising determining a thickness of the layer of material to deposit, wherein the thickness is calculated to maximize a probability of detecting the particle with the metrology equipment.
7. The method of claim 6 , wherein the thickness is calculated by determining a thickness sweet spot that maximizes the probability of detecting the particle.
8. The method of claim 1 , wherein a composition of one or more of the layer of material or the substrate is selected to optimize a probability of detecting the particle with the metrology equipment in (b).
9. The method of claim 1 , wherein a composition of one or more of the layer of material or the substrate is selected to optimize a probability of identifying the composition of the particle in (c).
10. The method of claim 1 , wherein the particle is a size that is undetectable with the metrology equipment without the deposition of the material.
11. The method of claim 1 , wherein the deposition in (a) is performed via Atomic Layer Deposition (ALD).
12. The method of claim 1 , performed at an ambient temperature of 200 degrees Celsius or less.