Semiconductor structure with through-silicon via

1. A semiconductor structure, comprising:

a semiconductor substrate comprising silicon;

a conductive element formed as a through-silicon via extending through a portion of the semiconductor substrate;

a plurality of insulating elements formed in portions of the semiconductor substrate at a first region surrounding the conductive element; and

a semiconductor device formed over a portion of the semiconductor substrate at a second region adjacent to the first region, wherein the first region is formed between the conductive element and the second region;

wherein the plurality of insulating elements are partially connected to form a grid-like pattern from a top view, thereby defining a plurality of semiconductor sub-regions in the semiconductor substrate at the first region surrounding the conductive element;

wherein the plurality of semiconductor sub-regions are isolated from each other and are configured as an array having a first row of semiconductor sub-regions of substantially the same size arranged along a first direction, a second row of semiconductor sub-regions of substantially the same size arranged along the first direction,

wherein the first row of semiconductor sub-regions is aligned with the second row of semiconductor sub-regions along a second direction orthogonal to the first direction, wherein the first direction and the second direction are parallel to a top surface of the semiconductor substrate.

2. The semiconductor structure as claimed in claim 1 , wherein the conductive element comprises copper.

3. The semiconductor structure as claimed in claim 1 , wherein the plurality of insulating elements are shallow-trench-isolation (STI) elements formed in the semiconductor substrate.

4. The semiconductor structure as claimed in claim 3 , wherein the shallow-trench-isolation (STI) elements comprises silicon oxide.

5. The semiconductor structure as claimed in claim 1 , wherein an overall area of the plurality of semiconductor sub-regions is about 15% to about 60% of an area of the first region.

6. The semiconductor structure as claimed in claim 1 , wherein a distance from an outer edge of the first region to an outer edge of the conductive element is less than 3 μm and a device shift of the semiconductor device affected by stress induced by the conductive element is reduced to less than 3%.

7. A semiconductor structure, comprising:

a semiconductor substrate;

a conductive element formed in a portion of the semiconductor substrate;

a plurality of semiconductor sub-regions separately formed in the semiconductor substrate at a first region surrounding the conductive element;

wherein a semiconductor sub-region of the plurality of semiconductor sub-regions comprises a surface aligned with a top surface of the conductive element, and

a semiconductor device formed over a portion of the semiconductor substrate at a second region adjacent to the first region, wherein the first region is formed between the conductive element and the second region;

wherein the plurality of semiconductor sub-regions are configured as an array having a concentric orientation about the conductive element.

8. The semiconductor structure as claimed in claim 7 , further comprising a plurality of isolation elements formed in the semiconductor substrate at the first region surrounding the conductive element to define the plurality of semiconductor sub-regions.

9. The semiconductor structure as claimed in claim 7 , wherein the semiconductor substrate comprises silicon, and the conductive element is a through-silicon via formed through the semiconductor substrate.

10. The semiconductor structure as claimed in claim 7 , wherein the conductive element comprises copper.

11. The semiconductor structure as claimed in claim 7 , wherein the plurality of insulating elements are shallow-trench-isolation (STI) elements formed in the semiconductor substrate.

12. The semiconductor structure as claimed in claim 11 , wherein the plurality of insulating elements are partially connected.

13. The semiconductor structure as claimed in claim 7 , wherein an overall area of the plurality of semiconductor sub-regions is about 15% to about 60% of an area of the first region.

14. The semiconductor structure as claimed in claim 7 , wherein a distance from an outer edge of the first region to an outer edge of the conductive element is less than 3 μm and a device shift of the semiconductor device affected by stress induced by the conductive element is reduced to less than 3%.

15. A semiconductor structure, comprising:

a semiconductor substrate;

a conductive element formed in a portion of the semiconductor substrate;

a plurality of insulating elements formed in portions of the semiconductor substrate at a first region surrounding the conductive element;

a first semiconductor element formed over a portion of the semiconductor substrate at a second region adjacent to the first region, wherein the first region is formed between a first side of the conductive element and the second region; and

a second semiconductor element formed over a portion of the semiconductor substrate at a third region adjacent to the first region, wherein the first region is formed between a second side of the conductive element and the third region, wherein the second side is perpendicular to the first side;

wherein the plurality of insulating elements are partially connected to form a grid-like pattern from a top view, thereby defining a plurality of semiconductor sub-regions in the semiconductor substrate at the first region surrounding the conductive element;

wherein the plurality of semiconductor sub-regions are isolated from each other and are configured as an array having a first row of semiconductor sub-regions of substantially the same size arranged along a first direction, a second row of semiconductor sub-regions of substantially the same size arranged along the first direction,

wherein the first row of semiconductor sub-regions is aligned with the second row of semiconductor sub-regions along a second direction orthogonal to the first direction, wherein the first direction and the second direction are parallel to a top surface of the semiconductor substrate.

16. The semiconductor structure as claimed in claim 15 , wherein the semiconductor substrate comprises silicon, and the conductive element is a through-silicon via formed through the semiconductor substrate.

17. The semiconductor structure as claimed in claim 15 , wherein an overall area of the plurality of semiconductor sub-regions is about 15% to about 60% of an area of the first region.

18. The semiconductor structure as claimed in claim 15 , wherein a distance from the first semiconductor device to an outer edge of the conductive element is less than 3 μm and device shifts of the first and semiconductor devices affected by stress induced by the conductive element is reduced to less than 3%.

19. The semiconductor structure as claimed in claim 15 , wherein the first semiconductor device is a p-type metal-oxide-semiconductor (PMOS) device, and the second semiconductor device is a n-type metal-oxide-semiconductor (NMOS) device.

20. The semiconductor structure as claimed in claim 1 , wherein the array has an outer array and an inner array and, in top view, a shape of the outer array corresponds to a shape of an outer edge of the first region.

21. The semiconductor structure as claimed in claim 20 , wherein, in top view, a shape of the inner array corresponds to the shape of the outer edge of the first region.

22. The semiconductor structure as claimed in claim 20 , wherein the shape of the outer array is different than a shape of the conductive element.