Bromine containing silicon precursors for encapsulation layers
Methods of depositing silicon nitride encapsulation layers by atomic layer deposition over memory devices including chalcogenide material are provided herein. Methods include using iodine-containing and/or bromine-containing silicon precursors and depositing thermally using ammonia or hydrazine as a second reactant, or iodine-containing and/or bromine-containing silicon precursors and depositing using a nitrogen-based or hydrogen-based plasma.
1. A method of encapsulating chalcogenide material, the method comprising:
(a) providing a substrate to a chamber, the substrate comprising one or more exposed layers of the chalcogenide material;
(b) exposing the substrate to a chlorine-free bromine-containing silicon precursor under conditions allowing the chlorine-free bromine-containing silicon precursor to adsorb onto a surface of the substrate, thereby forming an adsorbed layer of the chlorine-free bromine-containing silicon precursor; and
(c) exposing the substrate to a second reactant to form a silicon nitride film on the chalcogenide material,
wherein the chlorine-free bromine-containing silicon precursor is selected from the group consisting of compounds having a chemical formula of Si x Br y I z , where x=1, y is an integer between and including 1 and 4, and y+z=4; and compounds having a chemical formula of Si x Br y I z , where x=2, y is an integer between and including 1 and 6, and y+z=6.
2. The method of claim 1 , wherein the chlorine-free bromine-containing silicon precursor is selected from the group consisting of tetrabromosilane (SiBr 4 ), SiBr 3 I, SiBr 2 I 2 , SiBrI 3 , hexabromodisilane (Si 2 Br 6 ), Si 2 Br 5 I, Si 2 Br 4 I 2 , Si 2 Br 3 I 3 , Si 2 Br 2 I 4 Si 2 BrI 5 , and combinations thereof.
3. The method of claim 1 , wherein the silicon nitride film is deposited to a thickness of at least about 40 Å.
4. The method of claim 1 , further comprising igniting a plasma when exposing the substrate to the second reactant to generate a reactive species.
5. The method of claim 4 , wherein the second reactant is selected from the group consisting of nitrogen and hydrogen.
6. The method of claim 1 , wherein the second reactant forms a volatile species when reacted with a material selected from the group consisting of aluminum, iron, copper, antimony, selenium, tellurium, germanium, and arsenic.
7. The method of claim 1 , wherein the chalcogenide material is selected from the group consisting of sulfur, selenium, tellurium, and combinations thereof.
8. The method of claim 1 , wherein the silicon nitride film deposited has a step coverage of at least about 95%.
9. The method of claim 1 , wherein the silicon nitride film is deposited to a thickness greater than about 30 Å.
10. The method of claim 1 , wherein the chamber is purged during at least one of: (i) after performing (b) and prior to performing (c); and (ii) after performing (c).
11. The method of claim 10 , wherein the chamber is purged by flowing a purge gas selected from the group consisting of argon, helium, nitrogen, and hydrogen.
12. A method of encapsulating chalcogenide material, the method comprising:
(a) providing a substrate to a chamber, the substrate comprising one or more exposed layers of the chalcogenide material;
(b) exposing the substrate to a chlorine-free bromine-containing silicon precursor under conditions allowing the chlorine-free bromine-containing silicon precursor to adsorb onto a surface of the substrate, thereby forming an adsorbed layer of the chlorine-free bromine-containing silicon precursor; and
(c) exposing the substrate to a second reactant to form a silicon nitride film on the chalcogenide material,
wherein the second reactant forms a volatile species when reacted with a material selected from the group consisting of aluminum, iron, copper, antimony, selenium, tellurium, germanium, and arsenic.
13. The method of claim 12 , wherein the chlorine-free bromine-containing silicon precursor is selected from the group consisting of compounds having a chemical formula of Si x Br y I z , where x=1, y is an integer between and including 1 and 4, and y+z=4; and compounds having a chemical formula of Si x Br y I z , where x=2, y is an integer between and including 1 and 6, and y+z=6.
14. The method of claim 12 , further comprising igniting a plasma when exposing the substrate to the second reactant to generate a reactive species.
15. The method of claim 12 , wherein the chalcogenide material is selected from the group consisting of sulfur, selenium, tellurium, and combinations thereof.
16. A method of encapsulating chalcogenide material, the method comprising:
(a) providing a substrate to a chamber, the substrate comprising one or more exposed layers of the chalcogenide material;
(b) exposing the substrate to a chlorine-free bromine-containing silicon precursor under conditions allowing the chlorine-free bromine-containing silicon precursor to adsorb onto a surface of the substrate, thereby forming an adsorbed layer of the chlorine-free bromine-containing silicon precursor; and
(c) exposing the substrate to a second reactant to form a silicon nitride film on the chalcogenide material,
wherein the second reactant is selected from the group consisting of ammonia and hydrazines, and wherein the silicon nitride film is deposited at a temperature less than about 300° C.
17. The method of claim 16 , wherein the chlorine-free bromine-containing silicon precursor is selected from the group consisting of compounds having a chemical formula of Si x Br y I z , where x=1, y is an integer between and including 1 and 4, and y+z=4; and compounds having a chemical formula of Si x Br y I z , where x=2, y is an integer between and including 1 and 6, and y+z=6.
18. The method of claim 16 , further comprising igniting a plasma when exposing the substrate to the second reactant to generate a reactive species.
19. The method of claim 16 , wherein the chalcogenide material is selected from the group consisting of sulfur, selenium, tellurium, and combinations thereof.