Method for manufacturing thermal bimorph diaphragm and MEMS speaker with thermal bimorphs

1. A method for manufacturing a thermal bimorph diaphragm, comprising:

thermally oxidizing a substrate to obtain an insulating layer thereon and providing a metal layer on the insulating layer;

providing a sacrificial layer on the metal layer;

providing a first thermal bimorph layer on the sacrificial layer;

providing a second thermal bimorph layer on the first thermal bimorph layer;

providing a metal connecting layer at the positions on the metal layer where the sacrificial layer is not provided, wherein the metal connecting layer serves as a connection point of the thermal bimorph diaphragm;

forming corresponding back holes on the substrate and the insulating layer and releasing the sacrificial layer; and

forming the thermal bimorph diaphragm which is warped with the first thermal bimorph layer and the second thermal bimorph layer after the sacrificial layer is released.

2. The method for manufacturing a thermal bimorph diaphragm of claim 1 , wherein

at least two of the thermal bimorph diaphragms are connected to each other by their connection points to form a thermal bimorph diaphragm array.

3. The method for manufacturing a thermal bimorph diaphragm of claim 2 , wherein

a continuous thin film is coated on top of the thermal bimorph diaphragm array before releasing the sacrificial layer, so that after the sacrificial layer is released, all the thermal bimorph diaphragms which are warped are mechanically connected.

4. The method for manufacturing a thermal bimorph diaphragm of claim 3 , wherein

the continuous thin film is one selected from a group of polymers, plastics, and dielectrics.

5. A MEMS speaker with thermal bimorphs comprising a MEMS acoustoelectric chip and a PCB substrate, wherein,

the MEMS acoustoelectric chip comprises a thermal bimorph diaphragm array, wherein

the thermal bimorph diaphragm array is manufactured by the method of claim 2 , and

at least one side of the MEMS acoustoelectric chip is metalized, and the metalized side of the MEMS acoustoelectric chip is connected with the PCB substrate.

6. The MEMS speaker with thermal bimorphs of claim 5 , wherein,

a metal path is provided on the PCB substrate.

7. The MEMS speaker with thermal bimorphs of claim 6 , wherein,

one metalized side of the MEMS acoustoelectric chip is flip-chip mounted on the metal path of the PCB substrate; and

a gap between the flip-chip mounted MEMS acoustoelectric chip and the PCB substrate is filled with an edge-fill process.

8. The MEMS speaker with thermal bimorphs of claim 6 , wherein,

one metalized side of the MEMS acoustoelectric chip is connected with the metal path of the PCB substrate by a lead wire; and

the side of the MEMS acoustoelectric chip that is not metalized is connected with the PCB substrate through die-attaching.

9. The MEMS speaker with thermal bimorphs of claim 6 , wherein,

the MEMS speaker further comprises a drive device and a sealing cover.

10. The MEMS speaker with thermal bimorphs of claim 9 , wherein,

the drive device is an IC driver and/or a flip-chip.

11. The MEMS speaker with thermal bimorphs of claim 10 , wherein,

the sealing cover and the PCB substrate are enclosed to form a back chamber, and an opening for transmitting sounds of the MEMS speaker is provided at a position on the PCB substrate corresponding to the thermal bimorph diaphragm array.

12. The MEMS speaker with thermal bimorphs of claim 10 , wherein,

the sealing cover and the PCB substrate are enclosed to form a front chamber, and an opening for transmitting sounds of the MEMS speaker is provided at a front portion or a lateral side portion of the sealing cover.