Non-volatile memory element with thermal-assisted switching control
A non-volatile memory element with thermal-assisted switching control is disclosed. The non-volatile memory element is disposed on a thermal inkjet resistor. Methods for manufacturing the combination and methods of using the combination are also disclosed.
1. A non-volatile memory element with thermal-assisted switching control, comprising:
a thermal element having a thickness of 95 nanometers, the thermal element to heat a resistive memory element; and
the resistive memory element disposed on the thermal element
wherein the thermal element heats the resistive memory element to different temperature regimes to perform different tasks.
2. The non-volatile memory element of claim 1 , wherein the resistive memory element s a memristor.
3. The non-volatile memory element of claim 1 , wherein the thermal element is a thermal inkjet resistor, the non-volatile memory element further comprising the thermal inkjet resistor, a passivation layer on the thermal inkjet resistor, and the resistive memory element on the passivation layer.
4. The non-volatile memory element of claim 3 , in which the thermal inkjet resistor comprises a relatively low resistivity electrically conducting material disposed on a relatively high resistivity electrically conducting material.
5. The non-volatile memory element of claim 4 , in which the thermal inkjet resistor is selected from the group consisting of AlCu on TaAl, AlCu on WSiN, AlCu on TaAlOx, AlCu on TiN, TaAl on TiN/AlCu, WSiN on TiN/AlCu, TaAlOx on TiN/AlCu, and TiN on TiN/AlCu.
6. The non-volatile memory element of claim 3 , wherein the passivation layer is selected from the group consisting of silicon nitride, silicon carbide, and silicon dioxide.
7. The non-volatile memory element of claim 3 , wherein the resistive memory element is a memristor having a structure that includes a bottom electrode, an active region, and a top electrode.
8. A method of manufacturing a multi-level programming non-volatile memory element; comprising disposing a non-volatile memory element on a thermal element, wherein:
the non-volatile memory element has multiple states, each state associated with a temperature and an electrical bias;
the thermal element heats a resistive memory element of the non-volatile memory element to multiple temperatures to place the resistive memory element in different states; and
the thermal element has a thickness of 95 nanometers.
9. The method of claim 8 , comprising:
providing a thermal inkjet resistor as the thermal element;
forming a passivation layer on the thermal inkjet resistor; and
forming the non-volatile on the passivation layer.
10. The method of claim 9 , in which the thermal inkjet resistor comprises a relatively low resistivity electrically conducting material disposed on a relatively high resistivity electrically conducting material.
11. The method of claim 10 , in which the thermal inkjet resistor is selected from the group consisting of AlCu on TaAl, AlCu on WSiN, AlCu on TaAlOx, AlCu on TiN, TaAl on TiN/AlCu, WSiN on TiN/AlCu, TaAlOx on TiN/AlCu, and TiN on TiN/AlCu.
12. The method of claim 9 , wherein the passivation layer is selected from the group consisting of silicon nitride, silicon carbide, and silicon dioxide.
13. The method of claim 9 , wherein the non-volatile memory element is a memristor having a structure that includes a bottom electrode, an active region, and a top electrode.
14. A method of operating a multi-level programming non-volatile memory element including a non-volatile memory element on a thermal element, the method including:
providing the multi-level programming non-volatile memory element including the non-volatile memory element on the thermal element, which thermal element has a thickness of 95 nanometers;
associating different temperatures and electrical biases with different logic states;
energizing the thermal element to heat the non-volatile memory element to a pre-selected temperature; and
storing information in the non-volatile memory element.
15. The method of claim 14 in which the non-volatile memory element has multiple states, each associated with a combination of a temperature and electrical bias.
16. The non-volatile memory element of claim 1 , wherein the thermal element is a dual-metal layer resistor.
17. The non-volatile memory element of claim 1 , wherein:
the thermal element is disposed under a crossbar array of non-volatile memory elements;
top electrodes of resistive elements form columns of the crossbar array; and
bottom electrodes of resistive elements form rows of the crossbar array.
18. The non-volatile memory element of claim 1 , wherein:
the thermal element heats the resistive memory element to a first temperature regime to control multi-cell applications:
the thermal element heats the resistive memory element to a second temperature regime to repair a dead non-volatile memory element;
the thermal element heats the resistive memory element to a third temperature regime to reset the non-volatile memory element; and
the thermal element heats the resistive memory element to a fourth temperature regime to electroform the non-volatile memory element.
19. The non-volatile memory element of claim 4 , wherein:
the relatively low resistivity electrically conducting material as a sheet resistance between 0.04 and 0.08 ohm/sq; and
the relatively high resistivity electrically conducting material has a sheet resistance between 30 and 120 ohm/sq.