Ambient desorption, ionization, and excitation for spectrometry

1. An ion source, comprising:

a plasma generator configured for supplying plasma at an ionization region proximate to a sample surface, the plasma generator comprising a plasma generating component, wherein the plasma generator is configured for switching between operating in a desorption mode and in an ionization mode, wherein:

in the desorption mode, the plasma generating component applies energy effective for heating a sample disposed at or part of the sample surface without exposing the sample to active plasma, wherein the energy is applied to a component selected from the group consisting of the sample, the sample surface, a sample support on which the sample is supported, a plasma precursor gas, and a combination of two or more of the foregoing; and

in the ionization mode, the plasma generating component applies energy to the plasma precursor gas effective for generating active plasma from the plasma precursor gas and exposing the sample to the active plasma; and

an interface configured for transferring analyte ions or photons produced in the plasma generated by the plasma generating component to a spectrometer.

2. The ion source of claim 1 , wherein the plasma generating component is movable relative to the sample surface, or the sample surface is movable relative to the plasma generating component, or both of the foregoing.

3. The ion source of claim 1 , wherein the plasma generator comprises a chamber in which the plasma is generated, and the chamber comprises a plasma outlet positioned to direct the plasma to the ionization region.

4. The ion source of claim 1 , wherein the plasma generating component is on a side of the sample support opposite to the sample surface, and the energy is coupled into the ionization region through a thickness of the sample support.

5. The ion source of claim 1 , wherein the plasma generating component comprises a microstrip resonator.

6. The ion source of claim 1 , wherein the plasma generating component comprises a waveguide, the waveguide comprising an electromagnetic field-focusing element and a matching network for directing the energy to the field-focusing element.

7. The ion source of claim 6 , comprising a configuration selected from the group consisting of:

the plasma generator is configured for conducting at least one of a gas, analyte ions, and photons through the waveguide;

the plasma generator comprises a sleeve surrounding the waveguide such that a channel is between the sleeve and the waveguide, and the plasma generator is configured for conducting at least one of a gas, analyte ions, and photons through the channel; and

both of the foregoing.

8. The ion source of claim 6 , wherein the waveguide comprises a center conductor and an outer conductor surrounding the center conductor, and the center conductor comprises an end comprising the field-focusing element.

9. The ion source of claim 8 , wherein the center conductor is hollow, and the plasma generator is configured for conducting at least one of a gas, analyte ions, and photons through the center conductor, through the waveguide, or through both the center conductor and the waveguide.

10. The ion source of claim 6 , wherein the field-focusing element comprises an aperture at an end of the waveguide, and the aperture has a cross-sectional area less than a cross-sectional area of the waveguide.

11. The ion source of claim 1 , wherein the plasma generating component is configured for applying microwave energy.

12. The ion source of claim 1 , wherein the plasma generator is configured for switching between operating in the desorption mode and the ionization mode according to a configuration selected from the group consisting of:

switching application of the energy between an OFF state and an ON state;

switching application of the energy between a low power state and a high power state;

switching application of the energy between a non-resonant drive frequency and a resonant drive frequency;

switching a flow of the plasma precursor gas between an OFF state and an ON state;

switching a flow of the plasma precursor gas between a low-flow state and a high-flow state;

switching the plasma precursor gas between a first composition having a high threshold for plasma formation and a second composition having a low threshold for plasma formation;

moving the plasma generating component to change a distance between the plasma generating component and the sample surface; and

a combination or two or more of the foregoing.

13. The ion source of claim 1 , comprising a sample support, the sample support comprising a configuration selected from the group consisting of:

the sample support comprises a planar substrate;

the sample support is configured for performing analytical separation on the sample surface;

the sample support comprises a material responsive to dielectric heating;

the sample support is disposed on a dielectric heating material;

the sample support is in contact with a stage or an end effector configured for moving the sample support along one or more directions; and

a combination of two or more of the foregoing.

14. An ion source, comprising:

a planar sample support comprising a sample surface and configured for performing analytical separation on the sample surface; and

a plasma generator configured for supplying plasma at an ionization region proximate to the sample surface, the plasma generator comprising a gas outlet for supplying a plasma precursor gas, and a plasma generating component configured for generating a localized microwave energy field, and the plasma generator configured for switching between operating in a desorption mode and in an ionization mode, wherein:

in the desorption mode, the plasma generating component applies energy effective for heating a sample disposed at or part of the sample surface without exposing the sample to active plasma, wherein the energy is applied to a component selected from the group consisting of the sample, the sample surface, a sample support on which the sample is supported, a plasma precursor gas, and a combination of two or more of the foregoing; and

in the ionization mode, the plasma generating component applies energy to the plasma precursor gas effective for generating active plasma from the plasma precursor gas and exposing the sample to the active plasma.

15. A method for ionizing a sample, the method comprising:

providing a sample;

desorbing analytes from the sample by operating a plasma generating component to apply energy under conditions effective for heating the sample without actively generating plasma, wherein the energy is applied to a component selected from the group consisting of the sample, a sample surface of the sample, a sample support on which the sample is supported, a plasma precursor gas, and a combination of two or more of the foregoing; and

generating plasma above a sample surface of the sample by operating a plasma generating component to apply energy to the plasma precursor gas under conditions effective for generating the plasma, wherein the plasma ionizes the desorbed analytes.

16. The method of claim 15 , comprising supporting or adsorbing the sample on a sample support.

17. The method of claim 16 , wherein providing the sample comprises providing a plurality of samples spatially separated on the sample support.

18. The method of claim 17 , wherein providing the plurality of samples comprises dispensing the samples onto the sample support, or performing analytical separation on an initial sample on the sample support to produce a plurality of samples comprising separated analytes.

19. The method of claim 17 , wherein applying the energy comprises generating a localized energy field, and further comprising:

selecting one or more of the samples;

moving the sample support to sequentially locate the one or more selected samples at the energy field; and

at each iteration of the sequence, performing the steps of desorbing analytes and generating plasma.

20. The method of claim 15 , comprising desorbing analytes from a subsurface region of the sample.