Selective inhibition in atomic layer deposition of silicon-containing films
Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.
1. A method comprising:
exposing a substrate having a feature thereon to an inhibitor such that the inhibitor is selectively adsorbed to sites at a top of the feature; and
performing one or more deposition cycles to deposit material in the feature.
2. The method of claim 1 , further comprising repeating the inhibition and deposition operations one or more times.
3. The method of claim 1 , wherein the feature is exposed to the inhibitor prior to performing the deposition cycles.
4. The method of claim 1 , wherein the feature is exposed to the inhibitor after an adsorbed layer is formed on the substrate during a deposition cycle.
5. The method of claim 1 , further comprising exposing the substrate to a reactant that reacts with the inhibitor.
6. The method of claim 5 , wherein exposing the substrate to a reactant comprises exposing the substrate to a plasma.
7. The method of claim 1 , wherein the inhibitor is selected from the group consisting of ammonia, hydrogen, and combinations thereof.
8. The method of claim 1 , wherein the inhibitor is selectively adsorbed at the top about 10% of the feature.
9. A method comprising:
performing a deposition cycle comprising:
exposing a substrate having a feature thereon to an inhibitor to form an inhibitor ambient such that the inhibitor is selectively adsorbed to sites at a top of the feature;
exposing the substrate to a first precursor to form a first precursor ambient;
exposing the substrate to a second reactant to form a second reactant ambient; and
repeating the deposition cycle one or more times to deposit material in the feature.
10. The method of claim 9 , wherein the inhibitor is selected from the group consisting of ammonia, hydrogen, and combinations thereof.
11. The method of claim 9 , wherein the second reactant is selected from the group consisting of nitrogen, nitrogen-containing gases, and oxygen-containing gases.
12. The method of claim 9 , further comprising removing the inhibitor ambient after exposing the substrate to the inhibitor.
13. The method of claim 9 , further comprising removing the first precursor ambient after exposing the substrate to the first precursor.
14. The method of claim 9 , further comprising removing the second reactant ambient after exposing the substrate to the second reactant.
15. The method of claim 9 , wherein the material deposited is a silicon-containing material.