Organic photosensitive device with an electron-blocking and hole-transport layer

1. A photosensitive structure, comprising:

a donor-intermix-acceptor (PIN) structure that includes:

a hole transport layer;

an organic poly(3-hexylthiophene-2,5-diyl) (P3HT) hole transport layer disposed on the hole transport layer, wherein the organic P3HT hole transport layer has a larger bandgap than the hole transport layer;

an intermix layer disposed on the organic P3HT hole transport layer, wherein the intermix layer includes a mixture of P3HT and phenyl-C61-butyric-acid-methyl ester (PCBM);

a lithium fluorine (LiF) electron transport layer disposed over the intermix layer, wherein the intermix layer has a gradient composition that varies from the organic P3HT hole transport layer to the LiF electron transport layer, and further wherein the intermix layer has textured surfaces that interface with the organic P3HT hole transport layer and the LiF electron transport layer; and

an electrode disposed on the LiF electron transport layer.

2. The photosensitive structure of claim 1 , wherein the organic P3HT hole transport layer has:

a highest occupied molecular orbital (HOMO) ranging between 5 eV and 5.4 eV,

a lowest unoccupied molecular orbital (LUMO) ranging between 2.8 eV and 3.2 eV, and

a bandgap ranging between 2 eV and 2.4 eV.

3. The photosensitive structure of claim 1 , wherein the hole transport layer includes one of: molybdenum oxide (MoO 3 ), nickel oxide (NiO), copper oxide (CuO), vanadium oxide (V 2 O 5 ), tungsten oxide (WO 3 ) or a combination thereof.

4. The photosensitive structure of claim 1 , wherein the hole transport layer includes poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS).

5. The photosensitive structure of claim 1 , wherein the hole transport layer is disposed on a first electrode that includes indium tin oxide (ITO), and the electrode is a second electrode that includes aluminum (Al).

6. The photosensitive structure of claim 1 , wherein a ratio of a molecular weight of the P3HT to the PCBM is about 1:0.8.

7. A photosensitive structure, comprising:

a poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) hole transport layer disposed on a first electrode;

an organic poly(3-hexylthiophene-2,5-diyl) (P3HT) electron blocking layer disposed on the PEDOT:PSS hole transport layer;

an organic photoactive layer disposed on the organic P3HT electron blocking layer, wherein the organic photoactive layer includes a mixture of P3HT and phenyl-C61-butyric-acid-methyl ester (PCBM), wherein a ratio of a molecular weight of the P3HT to the PCBM is about 1:0.8;

a lithium fluorine (LiF) hole blocking layer disposed over the organic photoactive layer; and

a second electrode disposed on the LiF hole blocking layer.

8. The photosensitive structure of claim 7 , wherein the LiF hole blocking layer is disposed on the organic photoactive layer.

9. The photosensitive structure of claim 7 , further comprising an organic hole blocking layer disposed between the organic photoactive layer and the LiF hole blocking layer.

10. The photosensitive structure of claim 7 , wherein the first electrode includes indium tin oxide and the second electrode includes aluminum.

11. The photosensitive structure of claim 9 , wherein the organic hole blocking layer includes a material that has:

a highest occupied molecular orbital (HOMO) ranging between 6.1 eV and 6.7 eV,

a lowest unoccupied molecular orbital (LUMO) ranging between 3.2 eV and 4.5 eV, and

a bandgap ranging between 1.6 eV and 3.0 eV.

12. The photosensitive structure of claim 9 , wherein the organic hole blocking layer includes a material in common with the organic photoactive layer.

13. The photosensitive structure of claim 7 , wherein the organic photoactive layer has textured surfaces that interface with the organic P3HT electron blocking layer and the LiF hole blocking layer.

14. The photosensitive structure of claim 9 , wherein the organic photoactive layer has textured surfaces that interface with the organic P3HT electron blocking layer and the organic hole blocking layer.

15. The photosensitive structure of claim 14 , wherein the organic hole blocking layer includes phenyl-C61-butyric-acid-methyl ester (PCBM).

16. The photosensitive structure of claim 7 , wherein the organic photoactive layer has a gradient composition that varies from the organic P3HT electron blocking layer to the LiF hole blocking layer.

17. A photosensitive structure, comprising:

a poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) hole transport layer disposed on a first electrode;

an organic poly(3-hexylthiophene-2,5-diyl) (P3HT) hole transport layer disposed on the PEDOT:PSS hole transport layer, wherein a material of the organic P3HT hole transport layer has a larger bandgap than a material of the PEDOT:PSS hole transport layer;

an organic photoactive layer disposed on the organic P3HT hole transport layer, wherein the organic photoactive layer includes a mixture of poly (PTB7) and phenyl-C70-butyric acid methyl ester (PC70BM);

a lithium fluorine (LiF) electron transport layer disposed over the organic photoactive layer, wherein the organic photoactive layer has a gradient composition that varies from the organic P3HT hole transport layer to the LiF electron transport layer; and

a second electrode disposed on the LiF electron transport layer.

18. The photosensitive structure of claim 17 , further comprising an organic phenyl-C61-butyric-acid-methyl ester (PCBM) electron transport layer disposed between the organic photoactive layer and the LiF electron transport layer.

19. The photosensitive structure of claim 18 , wherein the organic photoactive layer has textured surfaces that interface with the organic P3HT hole transport layer and the organic PCBM electron transport layer.

20. The photosensitive structure of claim 17 , wherein the organic photoactive layer has textured surfaces that interface with the organic P3HT hole transport layer and the LiF electron transport layer.