IP Library › Granted Patent US 9,876,496
Granted Patent B2
US 9,876,496 · App. 14/954,521 · Granted Jan 23, 2018

Radio frequency switch circuit

Inventors: Hyun Jin Yoo (Suwon-si, KR); Jong Myeong Kim (Suwon-si, KR); Yoo Hwan Kim (Suwon-si, KR); Hyun Hwan Yoo (Suwon-si, KR); Yoo Sam Na (Suwon-si, KR); Dae Seok Jang (Suwon-si, KR)
Assignee: Samsung Electro-Mechanics Co., Ltd.
H03K17/693
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Quick Facts
Patent No.
US 9,876,496
App. No.
14/954,521
Granted
Jan 23, 2018
Kind
B2
Abstract

A radio frequency switch circuit, according to examples, includes a switching circuit controlled to be in a turned on or turned off state on the basis of a gate signal to thereby allow a radio frequency signal to pass or be blocked; a voltage dividing circuit connected to terminals of the switching circuit that the radio frequency signal passes through and outputting intermediate voltage between the terminals by a voltage dividing node; and an impedance circuit connected between the voltage dividing node and a body terminal of the switching circuit.

Claims (42)

1. A radio frequency switch circuit, comprising a first switch circuit connected between a signal port and an antenna port, wherein the first switch circuit comprises:

a switching circuit controlled to be in a turned on or turned off state based on a gate signal to selectively pass or block a radio frequency signal between a set of terminals of the switching circuit;

a voltage divider connected to the set of terminals of the switching circuit and being configured to output intermediate voltage between the set of terminals of the switching circuit by a voltage dividing node; and

a reactance circuit connected between the voltage dividing node and a body terminal of the switching circuit,

wherein the switching circuit comprises a plurality of first switches connected to each other in series,

the reactance circuit is connected between the voltage dividing node of the voltage divider and a body terminal of a first switch of the plurality of first switches, and

the first switch of the plurality of first switches that is connected to the reactance circuit is provided in a position closer to the antenna port as compared to another switch of the plurality of first switches that is not connected to the reactance circuit.

2. The radio frequency switch circuit of claim 1 , wherein the voltage divider comprises a first resistor and a second resistor connected to each other in series, and

the first resistor and the second resistor have different levels of resistance.

3. The radio frequency switch circuit of claim 2 , wherein the reactance circuit comprises a body capacitor connected between a node between the first resistor and the second resistor and the body terminal of the switching circuit.

4. The radio frequency switch circuit of claim 1 , wherein the first switches comprise:

field effect transistors (FETs) connected to each other in series through source terminals and drain terminals of the FETs;

gate resistors connected to gate terminals of the FETs, respectively; and

body resistors connected to body terminals of the FETs, respectively.

5. The radio frequency switch circuit of claim 1 , further comprising a second switch circuit connected between the signal port and a ground and operated by a second gate signal, comprising a second switching circuit,

wherein the second switching circuit is controlled to be in a turned on or turned off state based on the second gate signal to selectively pass or block the radio frequency signal between a set of terminals of the second switching circuit.

6. The radio frequency switch circuit of claim 5 , wherein the second switch circuit further comprises:

a second voltage divider connected to the set of terminals of the second switching circuit through which the radio frequency signal from the second switching circuit passes

a second reactance circuit connected between a voltage dividing node of the second voltage divider and a body terminal of the second switching circuit.

7. The radio frequency switch circuit of claim 5 , wherein the second switching circuit comprises second switches connected to each other in series, and

the second switch circuit further comprises:

a second voltage divider connected between terminals through which the radio frequency signal from the second switches passes

a second reactance circuit connected between a voltage dividing node of the second voltage divider and a body terminal of a second switch of the second switches.

8. The radio frequency switch circuit of claim 1 , wherein the reactance circuit is further configured to compensate for a parasitic impedance difference between the body terminal of the switching circuit and the set of terminals which pass the radio frequency through the switching circuit.

9. A radio frequency switch circuit, comprising:

a first switch circuit connected between a signal port and an antenna port and operated by a first gate signal; and

a second switch circuit connected between the signal port and a ground and operated by a second gate signal,

wherein the second switch circuit comprises:

a second switching circuit controlled to be in a turned on or turned off state based on the second gate signal to selectively pass or block a radio frequency signal between a set of terminals thereof

a second voltage divider connected to the set of terminals of the second switching circuit and outputting intermediate voltage between the set of terminals by a voltage dividing node, and

a second reactance circuit connected between the voltage dividing node and a body terminal of the second switching circuit, the second reactance circuit configured to compensate for a difference in impedance,

wherein the second switching circuit comprises a plurality of second switches connected to each other in series,

the second reactance circuit is connected between the voltage dividing node of the second voltage divider and a body terminal of a second switch of the plurality of second switches, and

the second switch of the plurality of second switches that is connected to the second reactance circuit is provided in a position closer to the signal port as compared with another switch of the plurality of second switches that is not connected to the second reactance circuit.

10. The radio frequency switch circuit of claim 9 , wherein the second voltage divider comprises a first inductor and a second inductor connected to each other in series and having different levels of inductance, and

the second reactance circuit comprises a body capacitor connected between a node between the first inductor and the second inductor and the body terminal of the second switching circuit.

11. The radio frequency switch circuit of claim 9 , wherein the first switches comprise:

field effect transistors (FETs) connected to each other in series through source terminals and drain terminals of the FETs;

gate resistors connected to gate terminals of the FETs, respectively; and

body resistors connected to body terminals of the FETs, respectively.

12. The radio frequency switch circuit of claim 9 , wherein the second voltage divider comprises variable impedance switches connected to each other in series and having levels of impedance changed by a control signal, and

the second reactance circuit comprises a body capacitor connected between a node between the variable impedance switches and the body terminal of the switching circuit.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 30, 2015
From: YOO, HYUN JIN; KIM, JONG MYEONG; KIM, YOO HWAN; YOO, HYUN HWAN; NA, YOO SAM; JANG, DAE SEOK
To: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Reel/Frame 037172/0270 →
Priority Claims (1)
KR 10-2015-0041617 · Mar 25, 2015 · national
Continuity (1)
Related Publication 20160285449A1 · Sep 29, 2016