Semiconductor device and light-emitting apparatus
View Patent ↗A semiconductor device wherein the horizontal spreading of solder at the time of reflow is suppressed and a plurality of devices can be mounted close to each other on a substrate, and a light-emitting apparatus using such a semiconductor device as a light-emitting device are provided. A semiconductor device bonded to a substrate by solder includes a semiconductor layer, a plurality of device electrodes formed on a bottom surface of the semiconductor layer, and a plurality of auxiliary electrodes formed integrally with the device electrodes, respectively, wherein each of the auxiliary electrodes includes a groove portion formed in a bottom surface thereof, and a side face of the groove portion is slanted with respect to the bottom surface of the semiconductor layer so that the groove portion becomes narrower in width with increasing distance from a lower end of the auxiliary electrode and decreasing distance to an upper end thereof.
1. A semiconductor device which is bonded to a substrate by solder, comprising:
a semiconductor layer;
a plurality of device electrodes formed on a bottom surface of the semiconductor layer; and
a plurality of auxiliary electrodes formed integrally with the plurality of device electrodes, respectively, wherein
each of the auxiliary electrodes includes a groove portion formed in a bottom surface thereof,
a side face of the groove portion is slanted with respect to the bottom surface of the semiconductor layer so that the groove portion becomes narrower in width with increasing distance from a lower end of the auxiliary electrode and decreasing distance to an upper end thereof,
the bottom surface of each of the auxiliary electrodes other than the groove portion is a flat surface, and
in each of the auxiliary electrodes having a plurality of side faces, the groove portion is formed passing through a side face of the auxiliary electrode that does not face any other auxiliary electrode.
2. The semiconductor device according to claim 1 , wherein, in each of the auxiliary electrodes, a side face through which the groove portion is not formed is perpendicular to the bottom surface of the semiconductor layer.
3. The semiconductor device according to claim 1 , wherein
the semiconductor layer contains a light-emitting layer, and
the semiconductor device further includes a phosphor layer which contains a phosphor and which covers a top surface and side surface of the semiconductor layer.
4. The semiconductor device according to claim 3 , wherein horizontal end portions of the plurality of auxiliary electrodes are located inwardly of an outer peripheral surface of the phosphor layer.
5. The semiconductor device according to claim 1 , wherein, at least one of outer side surfaces of each of the auxiliary electrodes extending along the groove portion is slanted with respect to the bottom surface of the semiconductor layer.
6. The semiconductor device according to claim 5 , wherein
the plurality of auxiliary electrodes are two auxiliary electrodes, and
outer side surfaces of the two auxiliary electrodes facing each other are slanted so as to move away from each other as a distance to the semiconductor layer decreases.
7. The semiconductor device according to claim 6 , wherein two outer side surfaces of each of the two auxiliary electrodes extending along the longitudinal direction are slanted so as to move toward the horizontal center of the auxiliary electrode as the distance to the semiconductor layer decreases.
8. A light-emitting apparatus comprising:
a semiconductor light-emitting device; and
a substrate formed with an electrically conductive pattern thereon to which the semiconductor light-emitting device is bonded by solder, wherein
the semiconductor light-emitting device comprises:
a semiconductor layer containing a light-emitting layer;
a plurality of device electrodes formed on a bottom surface of the semiconductor layer; and
a plurality of auxiliary electrodes formed integrally with the plurality of device electrodes, respectively, and wherein
each of the auxiliary electrodes includes a groove portion formed in a bottom surface thereof,
a side face of the groove portion is slanted with respect to the bottom surface of the semiconductor layer so that the groove portion becomes narrower in width with increasing distance from a lower end of the auxiliary electrode and decreasing distance to an upper end thereof,
the bottom surface of each of the auxiliary electrodes other than the groove portion is a flat surface, and
in each of the auxiliary electrodes having a plurality of side faces, the groove portion is formed passing through a side face of the auxiliary electrode that does not face any other auxiliary electrode.