Light emitting element
A light emitting element includes at least a first light reflecting layer 41 formed on a surface of a substrate 11 , a laminated structural body 20 made of a first compound semiconductor layer 21 , an active layer 23 and a second compound semiconductor layer 22 formed on the first light reflecting layer 41 , and a second electrode 32 and a second light reflecting layer 42 formed on the second compound semiconductor layer 22 , the laminated structural body 20 is configured from a plurality of laminated structural body units 20 A, a light emitting element unit 10 A is configured from each of the laminated structural body units 20 A, and a resonator length in the light emitting element unit 10 A is different in every light emitting element unit.
1. A light emitting element comprising at least:
a first light reflecting layer formed on a surface of a substrate;
a laminated structural body made of a first compound semiconductor layer, an active layer, and a second compound semiconductor layer formed on the first light reflecting layer; and
a second electrode and a second light reflecting layer formed on the second compound semiconductor layer, wherein
the laminated structural body is configured from a plurality of laminated structural body units,
a light emitting element unit is configured from each of the laminated structural body units,
the surface of the substrate has a step-like shape,
one laminated structural body unit is formed above a portion of the substrate, the portion being equivalent to one tread, and
a resonator length in the light emitting element unit is different in every light emitting element unit.
2. The light emitting element according to claim 1 , wherein
a total value of portions of the substrate, the portion being equivalent to a rise, is 40 nm or less.
3. The light emitting element according to claim 1 , wherein
the second electrode and the second light reflecting layer are common in the light emitting element units.
4. The light emitting element according to claim 1 , wherein
the second electrode and the second light reflecting layer are independently provided in each of the light emitting element units.
5. The light emitting element according to claim 4 , wherein
the light emitting element units that emit a plurality of types of desired wavelengths are caused to emit light.
6. The light emitting element according to claim 1 , wherein
thicknesses of the active layer and the second compound semiconductor layer are constant.
7. The light emitting element according to claim 1 , wherein
a top face of the first light reflecting layer has a shape following the surface of the substrate as a whole.
8. The light emitting element according to claim 1 , wherein
the laminated structural body is made of a GaN-based compound semiconductor.
9. The light emitting element according to claim 1 , wherein
a wavelength of emitted light is from 360 to 600 nm, both inclusive.
10. The light emitting element according to claim 1 , wherein
a spectral width of output light is further widened as the light emitting element is caused to perform a modulation operation.
11. A light emitting element comprising at least:
a first light reflecting layer formed on a surface of a substrate;
a laminated structural body made of a first compound semiconductor layer, an active layer, and a second compound semiconductor layer formed on the first light reflecting layer; and
a second electrode and a second light reflecting layer formed on the second compound semiconductor layer, wherein
the laminated structural body is configured from a plurality of laminated structural body units,
a light emitting element unit is configured from each of the laminated structural body units,
a top face of the first compound semiconductor layer has a step-like shape,
one laminated structural body unit is configured from a portion of the laminated structural body including the top face of the first compound semiconductor layer, the top face being equivalent to one tread, and
a resonator length in the light emitting element unit is different in every light emitting element unit.
12. The light emitting element according to claim 11 , wherein
a total value of portions of the first compound semiconductor layer, the portion being equivalent to a rise, is 40 nm or less.
13. A light emitting element comprising at least:
a first light reflecting layer formed on a smooth surface of a substrate having an off angle with respect to a crystal plane of the substrate;
a laminated structural body made of a first compound semiconductor layer, an active layer, and a second compound semiconductor layer formed on the first light reflecting layer; and
a second electrode and a second light reflecting layer formed on the second compound semiconductor layer, wherein
a thickness of the first compound semiconductor layer is smoothly increased in the light emitting element in a direction parallel with a surface of the substrate.
14. The light emitting element according to claim 13 , wherein
a difference between a maximum value and a minimum value of a thickness of the laminated structural body is 40 nm or less.