Single-wafer-type cleaning apparatus
A single-wafer-type cleaning apparatus is provided. The single-wafer-type cleaning apparatus is configured to be capable of controlling electrostatic charges generated due to rotating a wafer during a semiconductor cleaning process and a defect caused by the electrostatic charges. The cleaning process uses an ionizer mounted on a chuck.
1. A single-wafer-type cleaning apparatus comprising:
a chamber;
a chuck disposed in the chamber;
an ionizer mounted on the chuck and configured to generate ions;
at least one cleaning chemical dispensing nozzle disposed in the chamber; and
a wafer fixing part disposed on the chuck.
2. The single-wafer-type cleaning apparatus of claim 1 , wherein the ions generated from the ionizer are emitted to a back surface of a wafer disposed on the wafer fixing part to neutralize charged particles accumulated in the wafer.
3. The single-wafer-type cleaning apparatus of claim 2 , wherein the ionizer generates the ions using a corona method, a piezo high frequency alternating current (HF-AC) method, or an X-ray method.
4. The single-wafer-type cleaning apparatus of claim 3 , wherein a voltage using a HF-AC or pulsed AC method is applied to the ionizer.
5. The single-wafer-type cleaning apparatus of claim 1 , wherein the ionizer has at least one of a bar type, a ring type, a plurality of ring types, and a radial type.
6. The single-wafer-type cleaning apparatus of claim 1 , wherein the chuck includes a non-rotating body disposed at a center of the chuck and a rotating body configured to surround the non-rotating body.
7. The single-wafer-type cleaning apparatus of claim 6 , wherein the ionizer is mounted on the non-rotating body.
8. The single-wafer-type cleaning apparatus of claim 1 , wherein the cleaning chemical dispensing nozzle includes a first cleaning chemical dispensing nozzle configured to spray a cleaning chemical onto a front surface of a wafer disposed on the wafer fixing part.
9. The single-wafer-type cleaning apparatus of claim 8 , wherein the cleaning chemical dispensing nozzle includes a second cleaning chemical dispensing nozzle configured to spray the cleaning chemical onto a back surface of the wafer.
10. The single-wafer-type cleaning apparatus of claim 8 , further comprising an air supplier injecting air toward the front surface of the wafer.
11. The single-wafer-type cleaning apparatus of claim 1 , wherein the chuck further includes a ground peak being in contact with a wafer disposed on the wafer fixing part.
12. The single-wafer-type cleaning apparatus of claim 11 , wherein the ground peak includes a conductive material.
13. A wafer cleaning method comprising: providing a single-wafer-type cleaning apparatus comprising: a chamber; a chuck disposed in the chamber; an ionizer mounted on the chuck and configured to generate ions; at least one cleaning chemical dispensing nozzle disposed in the chamber; and a wafer fixing part disposed on the chuck;
loading a wafer on the chuck;
generating ions from the ionizer;
emitting the ions onto a back surface of the wafer to neutralize charged particles accumulated in the wafer; and
cleaning the wafer.
14. The method of claim 13 , wherein the cleaning of the wafer includes spraying a cleaning chemical onto the wafer through at least one chemical dispensing nozzle.
15. The method of claim 13 , wherein the chuck includes a rotating body and a non-rotating body, and the ionizer is mounted on the non-rotating body.
16. The method of claim 15 , wherein the wafer is rotated with the rotating body and ions generated from the ionizer are emitted.
17. A single-wafer-type cleaning apparatus comprising:
a chamber;
a chuck disposed in the chamber and including a rotating body and a non-rotating body;
an ionizer mounted on the non-rotating body and configured to generate ions;
a wafer fixing part disposed on the rotating body; and
a cleaning chemical supply part including a first cleaning chemical dispensing nozzle configured to spray a cleaning chemical onto a front surface of a wafer disposed on the wafer fixing part.
18. The single-wafer-type cleaning apparatus of claim 17 further comprising a second cleaning chemical dispensing nozzle disposed on the non-rotating body and configured to spray a cleaning chemical onto a back surface of the wafer.
19. The single-wafer-type cleaning apparatus of claim 17 , further comprising:
a conductive ground peak disposed on the rotating body and configured to contact a back surface of the wafer disposed on the wafer fixing part; and
a ground wire embedded in the chuck.
20. The single-wafer-type cleaning apparatus of claim 17 , wherein the ground peak includes the wafer fixing part coated with a conductive material.