Method of manufacturing a semiconductor device comprising field stop zone
A method of manufacturing a semiconductor device includes forming a field stop zone by irradiating a portion of a semiconductor body with a laser beam through a first surface of the semiconductor body. The portion has an oxygen concentration in a range of 5×10 16 cm −3 and 5×10 17 cm −3 . Then the semiconductor body is irradiated with protons through the first surface and annealed in a temperature range of 300° C. to 550° C.
1. A method of manufacturing a semiconductor device, the method comprising:
forming a field stop zone comprising hydrogen-vacancy shallow donor complexes by:
irradiating portion of a semiconductor body with a laser beam through a first surface of the semiconductor body, the portion comprising an oxygen concentration in a range of 5×10 16 cm −3 to 5×10 17 cm −3 ;
irradiating the semiconductor body with protons through the first surface; and
annealing the semiconductor body in a temperature range of 300° C. to 550° C., so as to form the hydrogen-vacancy shallow donor complexes,
wherein absorption of the laser beam in the semiconductor body locally melts the semiconductor body at the first surface and generates vacancies in a part of the semiconductor body extending from the first surface to a depth, wherein the depth is 5 μm or greater.
2. The method of claim 1 , wherein the annealing is carried for a duration between 30 minutes to four hours.
3. The method of claim 1 , wherein the semiconductor body is a magnetic Czochralski silicon body.
4. The method of claim 1 , further comprising, prior to irradiation with the laser beam, introducing dopants into an area at the first surface and electrically activating the dopants.
5. The method of claim 1 , wherein irradiating the portion of the semiconductor body with the laser beam is carried out multiple times.
6. The method of claim 1 , further comprising introducing platinum into the semiconductor body.
7. The method of claim 1 , wherein irradiating the semiconductor body with protons is carried out multiple times at different implantation energies.
8. The method of claim 7 , wherein the implantation energies range between 100 keV and 5 MeV.
9. The method of claim 1 , wherein irradiating the semiconductor body with protons is carried out multiple times at different doses.
10. The method of claim 9 , wherein the doses range between 0.5×10 13 protons/cm 2 and 5×10 14 protons/cm 2 .
11. The method of claim 1 , further comprising forming an anode at a second surface opposite to the first surface and forming a cathode at the first surface.
12. The method of claim 1 , further comprising forming a gate and an emitter at a second surface opposite to the first surface and forming a collector at the first surface.
13. The method of claim 1 , wherein the semiconductor device is a vertical semiconductor power device, the method further comprising:
forming a first load terminal structure at the first surface of the semiconductor body having opposite first and second surfaces; and
forming a second load terminal structure at the second surface of the semiconductor body.
14. The method of claim 1 , wherein the depth is 30 μm or less.
15. The method of claim 1 , wherein the depth is between 15 μm and 25 μm.
16. A method of manufacturing a semiconductor diode, the method comprising:
forming an anode region in a semiconductor body having opposite first and second surfaces by introducing p-type dopants through the second surface into the semiconductor body;
forming a cathode region in the semiconductor body by introducing n-type dopants through the first surface into the semiconductor body; and
forming a field stop zone comprising hydrogen-vacancy shallow donor complexes by:
irradiating a portion of the semiconductor body with a laser beam through the first surface of the semiconductor body, the portion comprising an oxygen concentration in a range of 5×10 16 cm −3 and 5×10 17 cm −3 ;
irradiating the semiconductor body with protons through the first surface; and
annealing the semiconductor body in a temperature range of 300° C. to 550° C., so as to form the hydrogen-vacancy shallow donor complexes,
wherein absorption of the laser beam in the semiconductor body locally melts the semiconductor body at the first surface and generates vacancies in a part of the semiconductor body extending from the first surface to a depth, wherein the depth is 5 μm or greater.
17. The method of claim 16 , wherein the n-type dopants comprise phosphorus.
18. The method of claim 16 , wherein the n-type dopants are electrically activated by irradiating the portion of the semiconductor body with the laser beam.
19. The method of claim 16 , further comprising introducing platinum into the semiconductor body.
20. The method of claim 16 , wherein the depth is 30 μm or less.
21. The method of claim 16 , wherein the depth is between 15 μm and 25 μm.