Method for grouping region of interest of mask pattern and measuring critical dimension of mask pattern using the same

1. A method for measuring a critical dimension of a mask pattern, comprising:

generating a mask pattern using an optically proximity-corrected (OPC) mask design including at least one block;

measuring a first critical dimension (CD) of a target-region of interest (target-ROI) including neighboring blocks having a same critical dimension, in the mask pattern;

determining a group region of interest including the target-ROI and at least one neighboring block adjacent to the target-ROI;

measuring second CDs of the at least one neighboring block of the group region of interest; and

correcting a measuring value of the first CD using a measuring value of the second CDs,

wherein correcting the measuring value of the first CD includes:

calculating a first mean to target between the measuring value of the first CD and the first CD in the mask design;

calculating a second mean to targets between measuring values of the second CDs of the at least one neighboring block of the group region of interest and the second CD of the mask design for each block, respectively; and

correcting the measuring value of the first CD by normalizing the first mean to target and the second mean to target.

2. The method as claimed in claim 1 , wherein generating the mask pattern includes:

generating a first mask design;

generating a second mask design by optically proximity-correcting the first mask design; and

generating the mask pattern according to the second mask design.

3. The method as claimed in claim 2 , wherein determining the group region of interest includes:

overlaying the first mask design with the second mask design;

defining a reference region of interest of the first mask design; and

determining a region of the mask pattern corresponding to the reference region of interest as the group region of interest.

4. The method as claimed in claim 3 , wherein defining the reference region of interest includes defining a second region extended from a first region corresponding to the target-ROI in the first mask design and having a same CD as the first region.

5. The method as claimed in claim 1 , further comprising simulating forming a target pattern using the mask pattern,

wherein determining the group region of interest includes:

overlaying a simulation result image with the mask design,

defining a reference region of interest of the simulation result image, and

determining a region of the mask pattern design corresponding to the reference region of interest as the group region of interest.

6. The method as claimed in claim 5 , wherein defining the reference region of interest of the simulation result image includes:

finding a third region corresponding to the target-ROI in the simulation result image;

finding a fourth region extended from the third region and having a same CD as the third region; and

defining the fourth region as the reference region of interest.

7. The method as claimed in claim 6 , wherein finding the fourth region includes:

finding critical points in which CDs vary in the third region; and

defining a region connecting the critical points as the fourth region.

8. The method as claimed in claim 7 , wherein the critical points are detected using one or more of contrast of a pixel, edge detection, or a slope of an edge.

9. The method as claimed in claim 1 , further comprising acquiring a measuring image of a target pattern by forming the target pattern using the mask pattern,

wherein determining the group region of interest includes:

overlaying the measuring image of the target pattern with the mask design;

defining a reference region of interest of the measuring image; and

determining a region of the mask pattern corresponding to the reference region of interest as the group region of interest.

10. The method as claimed in claim 9 , wherein the measuring image includes a scanning electron microscope (SEM) image.

11. The method as claimed in claim 1 , wherein determining the group region of interest includes:

measuring second CDs of the neighboring blocks adjacent to the target-ROI; and

determining the target-ROI and the neighboring block adjacent to the target-ROI, in which a difference between the first CD and each second CD is not larger than a predetermined critical design gap, as the group region of interest.

12. A method for grouping a region of interest of a mask pattern, comprising:

setting a target region of interest including neighboring blocks having a same critical dimension (CD), in a mask pattern using an optically proximity-corrected (OPC) mask design; and

determining a group region of interest including the target region of interest (target-ROI) and at least one neighboring block adjacent to the target region of interest,

wherein determining the group region of interest includes:

measuring a first CD of the target-ROI;

measuring second CDs of the at least one neighboring block adjacent to the target-ROI;

correcting a measuring value of the first CD using a measuring value of the second CDs, and

determining the target-ROI and the at least one neighboring block adjacent to the target-ROI, in which a difference between the first CD and each second CD is not larger than a predetermined critical design gap, as the group region of interest, and

wherein correcting the measuring value of the first CD includes:

calculating a first mean to target between the measuring value of the first CD and the first CD in the mask design;

calculating second mean to targets between measuring values of the second CDs of the at least one neighboring block of the group region of interest and the second CD of the mask design for each block, respectively; and

correcting the measuring value of the first CD by normalizing the first mean to target and the second mean to target.

13. A method of fabricating a mask used in manufacturing a semiconductor device, comprising:

measuring a critical dimension of a mask pattern, including:

finding a candidate region of interest having a first critical dimension in a field of view (FOV) of a measuring device,

determining a candidate group region of interest including a mask design before optical proximity correction of the mask pattern, and

finding a target group region of interest including a target region of interest by excluding candidate regions of interest having lengths beyond a predetermined region of interest length range;

altering a layout of the mask pattern according to the critical dimension of the mask pattern to provide an altered layout;

fabricating the mask according to the altered layout; and

measuring a first critical dimension (CD) of the target region of interest, including:

measuring second CDs of neighboring blocks in the target region of interest; and

correcting a measuring value of the first CD using measuring values of the second CDs,

wherein correcting the measuring value of the first CD includes:

calculating a first mean to target between the measuring value of the first CD and the first CD in the mask design;

calculating a second mean to target between the measuring values of the second CDs of the neighboring blocks of the target region of interest and the second CD of the mask design for each block, respectively; and

correcting the measuring value of the first CD by normalizing the first mean to target and the second mean to target, and

wherein normalizing the first mean to target and the second mean to target includes calculating an average value of the first mean to target and the second mean to target and calculating a correcting value of the first CD by adding the average value to the first CD in the mask design.

14. The method as claimed in claim 13 , wherein the mask pattern includes an optically proximity-corrected mask pattern.

15. The method as claimed in claim 13 , wherein finding the target region of interest includes finding the candidate group region of interest, which is most similar to the predetermined region of interest length, as the target region of interest.