Packaging devices and methods for semiconductor devices

1. A method of packaging a semiconductor device, the method comprising:

placing a stress isolation structure (SIS) onto a packaging substrate proximate a perimeter of a semiconductor device mounting region of the packaging substrate;

coupling a semiconductor device onto the semiconductor device mounting region of the packaging substrate;

forming an underfill material between the packaging substrate and the semiconductor device;

adhering at least a first portion of the SIS to the packaging substrate using the underfill material, wherein a portion of the underfill material extends above the SIS;

forming a thermal interface material (TIM) over a top surface of the semiconductor device; and

coupling a cover directly to a perimeter of the packaging substrate by an adhesive material, wherein the cover defines an enclosed space, and wherein the semiconductor device and the SIS are disposed in the enclosed space.

2. The method of claim 1 , wherein placing the SIS onto the packaging substrate is performed before coupling the semiconductor device onto the semiconductor device mounting region.

3. The method of claim 2 , wherein placing the SIS onto the packaging substrate comprises adhering a second portion of the SIS to the packaging substrate using solder, an adhesive, or a combination thereof before coupling the semiconductor device onto the semiconductor device mounting region.

4. The method of claim 1 , wherein coupling the semiconductor device onto the semiconductor device mounting region is performed before coupling the SIS onto the packaging substrate.

5. The method of claim 1 , wherein the SIS comprises a stopper for the TIM.

6. The method of claim 1 , wherein adhering at least a first portion of the SIS to the packaging substrate using an underfill material comprises:

dispensing the underfill material over the first portion of the SIS; and

curing the underfill material.

7. The method of claim 1 , wherein the SIS comprises a coefficient of thermal expansion (CTE) of about 2.8 parts per million per degrees C. (ppm/° C.) to about 10.2 ppm/° C.

8. The method of claim 1 , wherein the semiconductor device comprises a plurality of semiconductor dies encapsulated in a molding compound and electrically interconnected by one or more redistribution layers.

9. A method comprising:

bonding a semiconductor device to a semiconductor device mounting region of a packaging substrate;

attaching a stress isolation structure (SIS) to the packaging substrate proximate at least a portion of a perimeter of the semiconductor device mounting region, wherein a lower surface of the SIS is thermally and electrically coupled to a conductive trace of the packaging substrate; and

attaching a perimeter of a cover directly to the packaging substrate by an adhesive, wherein the cover defines an enclosed space, and wherein the SIS and the semiconductor device are disposed within the enclosed space.

10. The method of claim 9 , wherein attaching the SIS to the packaging substrate comprises attaching at least a portion of the SIS to the packaging substrate using solder, an adhesive material having a transition temperature of about 70° C. to about 150° C., or a combination thereof.

11. The method of claim 9 , wherein attaching the SIS to the packaging substrate comprises attaching at least a portion of the SIS to the packaging substrate using an underfill material.

12. The method of claim 11 further comprising dispensing a portion of the underfill material between the semiconductor device and the packaging substrate.

13. The method of claim 9 , wherein the SIS is attached to the packaging substrate prior to bonding the semiconductor device to the packaging substrate.

14. The method of claim 9 , wherein the semiconductor device is bonded to the packaging substrate prior to attaching the packaging substrate.

15. A method comprising:

mounting a first semiconductor device to a first region of a packaging substrate;

mounting a second semiconductor device to a second region of the packaging substrate;

attaching a stress isolation structure (SIS) to the packaging substrate, wherein the SIS is at least partially disposed around perimeters of the first region and the second region; and

disposing a cover over the SIS and the packaging substrate, wherein the cover extends beyond a boundary of the SIS, wherein the cover comprises a first thickness over the first semiconductor device and a second thickness different than the first thickness over the second semiconductor device, wherein a composition of the cover is the same along a center axis of the cover, and wherein the center axis extends from a bottom surface of the cover to a top surface of the cover.

16. The method of claim 15 , wherein the SIS comprises a ceramic-based material, a metal-based material, a glass material, alumina, silicon nitride, silicon carbide, a machinable ceramic material, Invar, Kovar, stainless steel, quartz, graphite, a composite carbon, Cu-Graphite, Cu-tungsten, Cu-alloys, or a combination thereof.

17. The method of claim 15 , wherein the SIS comprises a partial ring around a perimeter of the second region, a continuous ring around the perimeter of the second region, an L-shaped beam proximate each corner of the perimeter of the second region, a plurality of L-shaped beams proximate each corner of the perimeter of the second region, a plurality of diagonal strips that radiate away from each corner of the perimeter of the second region, a fork-shaped beam proximate each corner of the perimeter of the second region, a Y-shaped beam proximate each corner of the perimeter of the second region, a T-shaped beam proximate each side of the second region, a continuous ring including a diagonal beam proximate each corner of the perimeter of the second region, or a combination thereof.

18. The method of claim 15 , wherein the SIS extends to the bottom surface of the cover.

19. The method of claim 15 , wherein a portion of the SIS is disposed between the first region of the packaging substrate and the second region of the packaging substrate.