IP Library Granted Patent US 9,893,087
Granted Patent B2
US 9,893,087 · App. 14/955,517 · Granted Feb 13, 2018

Thin film transistor substrate, display apparatus including thin film transistor substrate, method of manufacturing thin film transistor substrate, and method of manufacturing display apparatus

Inventors: Sangmok Hong (Yongin-si, KR); Moosoon Ko (Yongin-si, KR)
Assignee: SAMSUNG DISPLAY CO., LTD.
H01L27/1222H01L27/124H01L27/1259H01L27/3223H01L27/3276H01L2227/323
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Quick Facts
Patent No.
US 9,893,087
App. No.
14/955,517
Granted
Feb 13, 2018
Kind
B2
Abstract

A thin film transistor TFT substrate includes a substrate, a first conductive pattern that extends on the substrate in a first direction, a second conductive pattern located on the same layer as the first conductive pattern and nearest to a first side of the first conductive pattern in a second direction that is perpendicular to the first direction, and a dummy pattern located on the same layer as the first conductive pattern and located adjacent a second other side of the first conductive pattern which is opposite to the first side of the first conductive pattern.

Claims (31)

1. A thin film transistor (TFT) substrate comprising:

a substrate;

a first conductive pattern located on the substrate and extends in a first direction;

a second conductive pattern located on a same layer as the first conductive pattern nearest to the first conductive pattern among conductive patterns located adjacent a first side of the first conductive pattern, wherein the second conductive pattern extends in a second direction that is perpendicular to the first direction; and

a dummy pattern unit located on the same layer as the first conductive pattern and located adjacent a second side of the first conductive pattern which is opposite to the first side of the first conductive pattern,

wherein the second conductive pattern is part of a first gate electrode of a first TFT of a pixel.

2. The ITT substrate of claim 1 , wherein the first and second conductive patterns are spaced apart by a first distance, and the first conductive pattern and the dummy pattern unit is spaced apart by a second distance that is equal to or less than the first distance.

3. The TFT substrate of claim 1 , wherein the dummy pattern unit comprises a plurality of dummy patterns that are connected to or spaced apart front each other.

4. The TFT substrate of claim 3 , wherein the plurality of dummy patterns are arranged in a zigzag pattern.

5. The ITT substrate of claim 1 , further comprising a third conductive pattern located on the same layer as the first conductive pattern, nearest to the first conductive pattern among conductive patterns located adjacent a side of the dummy pattern unit which is opposite to another side of the dummy pattern unit where the first conductive pattern is located adjacently, wherein the third conductive pattern extends in the same first direction as the first conductive pattern,

wherein the third conductive pattern is spaced apart from the first conductive pattern by a third distance that is greater than the first distance.

6. The TFT substrate of claim 5 , further comprising: an active pattern, wherein the first gate electrode overlaps a portion of the active pattern.

7. The TFT substrate of claim 1 , further comprising a third conductive pattern located on the same layer as the first conductive pattern and nearest among conductive patterns located adjacent a side of the dummy pattern unit which is opposite to another side of the dummy pattern unit where the first conductive pattern is located adjacently,

wherein the third conductive pattern is spaced apart from the first conductive pattern by a third distance that is greater than the first distance.

8. The TFT substrate of claim 7 , further comprising:

a first active pattern that is part of the first TFT, where the first gate electrode overlaps a portion of the first active pattern;

a first pixel electrode that is electrically connected to the first TFT;

a second TFT that comprises a second active pattern and the third conductive pattern, where the third conductive pattern comprises a second gate electrode that overlaps a portion of the second active pattern; and

a second pixel electrode that is electrically connected to the second TFT.

9. A display apparatus comprising:

the thin film transistor (TFT) substrate of claim 1 ; and

a display panel located on the TFT substrate.

10. The TFT substrate of claim 1 , wherein the first conductive pattern is a gate line connected to a second gate electrode of a second TFT of the pixel.

11. A display device comprising:

a substrate comprising first and second pixels that are adjacent one another;

a dummy pattern located between the first and second pixels; and

a first conductive pattern located on the substrate between the dummy pattern and the first pixel,

wherein the first pixel comprises a first thin film transistor TFT and a second TFT, the first TFT comprising a second conductive pattern located on a same layer as the first conductive pattern and adjacent a side of the first conductive pattern that is opposite a side of the first conductive pattern adjacent the dummy pattern,

wherein the first conductive pattern is a gate line connected to a first gate electrode of the second TFT.

12. The display device of claim 11 , wherein the dummy pattern is located a first distance away from the first conductive pattern, wherein the second pixel comprises a third TFT, and wherein the third TFT comprises a third conductive pattern that is located a second distance away from the first conductive pattern that is larger than the first distance.

13. The TFT substrate of claim 11 , wherein the second conductive pattern is part of a second gate electrode of the first TFT.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 1, 2015
From: HONG, SANGMOK; KO, MOOSOON
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 037179/0226 →
Priority Claims (1)
KR 10-2015-0052458 · Apr 14, 2015 · national
Continuity (1)
Related Publication 20160307931A1 · Oct 20, 2016