Display device, electronic apparatus, and method of fabricating the display device
It is an object of the invention to provide a technique to manufacture a display device with high image quality and high reliability at low cost with high yield. The invention has spacers over a pixel electrode layer in a pixel region and over an insulating layer functioning as a partition which covers the periphery of the pixel electrode layer. When forming a light emitting material over a pixel electrode layer, a mask for selective formation is supported by the spacers, thereby preventing the mask from contacting the pixel electrode layer due to a twist and deflection thereof. Accordingly, such damage as a crack by the mask does not occur in the pixel electrode layer. Thus, the pixel electrode layer does not have a defect in shapes, thereby a display device which performs a high resolution display with high reliability can be manufactured.
1. A semiconductor device comprising:
a first substrate;
a transistor over the first substrate, the transistor comprising a semiconductor film;
a first insulating layer over the semiconductor film;
a first electrode over the first insulating layer;
a second insulating layer covering an edge portion of the first electrode;
a layer comprising an organic compound over the first electrode;
a second electrode over the layer; and
a third insulating layer over the second electrode,
wherein the first insulating layer comprises an opening portion,
wherein the first insulating layer comprises a first region around the opening portion,
wherein the first insulating layer comprises a second region thicker than the first region,
wherein the second insulating layer comprises a region in contact with the first region of the first insulating layer, and
wherein the second electrode comprises a region overlapping with the first region of the first insulating layer.
2. The semiconductor device according to claim 1 , wherein the first substrate is a flexible film.
3. The semiconductor device according to claim 1 , wherein the layer is capable of emitting white light.
4. The semiconductor device according to claim 1 , wherein the first insulating layer comprises a material selected from silicon nitride, polyimide and acrylic.
5. The semiconductor device according to claim 1 , wherein the second insulating layer comprises polyimide.
6. A display module comprising the semiconductor device according to claim 1 .
7. An electronic apparatus comprising the display module according to claim 6 .
8. A semiconductor device comprising:
a first substrate;
a transistor over the first substrate, the transistor comprising a semiconductor film;
a first insulating layer over the semiconductor film;
a first electrode over the first insulating layer;
a second insulating layer covering an edge portion of the first electrode;
a layer comprising an organic compound over the first electrode;
a second electrode over the layer; and
a third insulating layer over the second electrode,
wherein the second insulating layer comprises a projecting portion,
wherein the first insulating layer comprises a first region around an opening portion,
wherein the first insulating layer comprises a second region thicker than the first region,
wherein the second insulating layer comprises a region in contact with the first region of the first insulating layer, and
wherein the second electrode comprises a region overlapping with the first region of the first insulating layer.
9. The semiconductor device according to claim 8 , wherein the first substrate is a flexible film.
10. The semiconductor device according to claim 8 , wherein the layer is capable of emitting white light.
11. The semiconductor device according to claim 8 , wherein the first insulating layer comprises a material selected from silicon nitride, polyimide and acrylic.
12. The semiconductor device according to claim 8 , wherein the second insulating layer comprises polyimide.
13. A display module comprising the semiconductor device according to claim 8 .
14. An electronic apparatus comprising the display module according to claim 13 .
15. A semiconductor device comprising:
a first substrate;
a transistor over the first substrate, the transistor comprising a semiconductor film;
a first insulating layer over the semiconductor film;
a first electrode over the first insulating layer;
a second insulating layer covering an edge portion of the first electrode;
a layer comprising an organic compound over the first electrode;
a second electrode over the layer; and
a third insulating layer over the second electrode,
wherein the first insulating layer comprises an opening portion,
wherein the first insulating layer comprises a first region around the opening portion,
wherein the first insulating layer comprises a second region thicker than the first region,
wherein the second insulating layer, the first electrode, and the second electrode overlap with the first region of the first insulating layer.
16. The semiconductor device according to claim 15 , wherein the first substrate is a flexible film.
17. The semiconductor device according to claim 15 , wherein the layer is capable of emitting white light.
18. The semiconductor device according to claim 15 , wherein the first insulating layer comprises a material selected from silicon nitride, polyimide and acrylic.
19. The semiconductor device according to claim 15 , wherein the second insulating layer comprises polyimide.
20. A display module comprising the semiconductor device according to claim 15 .
21. An electronic apparatus comprising the display module according to claim 20 .