Bulk acoustic wave resonator
Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include an air cavity disposed on a substrate, a bulk acoustic wave resonant unit including a piezoelectric layer, and a reflective layer to reflect a wave of a resonant frequency that is generated from the piezoelectric layer.
1. A bulk acoustic wave resonater (BAWR), comprising:
a substrate;
an air cavity disposed below a first electrode;
a bulk acoustic wave resonant unit, disposed above the air cavity, and comprising;
a piezoelectric layer,
the first electrode disposed above the piezoelectric layer, and
a second electrode disposed above the piezoelectric layer;
a first reflective layer disposed between a second reflective layer and the second electrode; and
the second reflective layer disposed between the first reflective layer and the air cavity,
wherein the second reflective layer has a different acoustic impedance than the first reflective layer,
wherein the first reflective layer comprises at least one material to compensate for a temperature coefficient of frequency (TCF) of the bulk acoustic wave resonant unit, such that the first reflective layer comprises:
a material configured in the reflective layer to have a set lower impedance characteristic; and
a material configured to provide a set TCF compensation characteristic set to compensate for a TCF of the bulk acoustic wave resonator toward approximately zero.
2. The BAWR of claim 1 , wherein the material configured in the reflective layer to have a set lower impedance characteristic has a thickness of approximately one fourth (¼) of a wavelength of a resonant frequency of the BAWR and a reflective material, with the different acoustic impedance, of the second reflective layer has the thickness of approximately one fourth (¼) of the wavelength.
3. The BAWR of claim 1 , wherein, due to the material configured to provide the set TCF compensation characteristic, the first reflective layer has a TCF that has a plus or minus sign that is opposite to a plus or minus sign of the TCF of the bulk acoustic wave resonant unit.
4. The BAWR of claim 1 , wherein the material configured in the reflective layer to have the set lower impedance characteristic comprises at least one of: a silicon oxide-based material, a silicon nitride-based material, an aluminum oxide-based material, and an aluminum nitride-based material.
5. The BAWR of claim 1 , wherein the material configured to provide a set TCF compensation characteristic is a dopant added to the material configured in the reflective layer to have a set lower impedance characteristics.
6. The BAWR of claim 1 , wherein the second reflective layer comprises at least one of: molybdenum (Mo), ruthenium (Ru), tungsten (W), and platinum (Pt) or a compound of at least two of Mo, Ru, W, and Pt.
7. The BAWR of claim 1 , wherein the material configured to provide a set TCF compensation characteristic compensates for a TCF sum of at least the bulk acoustic wave resonant unit and the second reflective layer to approximately zero.