Method to improve LiCoO

1. A method for creating a lithium cobalt oxide (LiCoO2) film layer in a battery core, comprising:

depositing a LiCoO2 film layer by sputtering LiCoO2 with a sputtering gas, wherein the sputtering gas is a mixture of oxygen and argon;

annealing the LiCoO2 film layer at a predetermined temperature to achieve a resulting LiCoO2 film; and

depositing another LiCoO2 film layer on the annealed LiCoO2 film layer by sputtering LiCoO2 with an additional gas that includes argon, but not oxygen; wherein

the other LiCoO2 film layer is thinner than, and strengthens, the annealed LiCoO2 film layer.

2. The method of claim 1 , wherein the predetermined temperature is at least 300° C.

3. The method of claim 1 , wherein the LiCoO2 film layer is deposited on a substrate surface having a textured design such that the textured design on the surface facilitates a desired crystallized structure of the resulting LiCoO2 film.

4. The method of claim 3 , wherein the textured design is formed on the substrate surface by at least one of we etching, sputter etching, or mechanical roughing.

5. The method of claim 1 , wherein the LiCoO2 film layer is deposited on a substrate surface having a seed layer such that the seed layer facilitates a desired crystallized structure of the resulting LiCoO2 film.

6. The method of claim 5 , wherein the seed layer is at least one of sputter deposit evaporated onto the substrate surface, wet coated onto the substrate surface, or printed onto the substrate surface.

7. The method of claim 1 , wherein annealing the LiCoO2 film layer at the predetermined temperature achieves a crystallization structure of the resulting LiCoO2 film that has planes parallel to a surface of the resulting LiCoO2 film and open channels for lithium ions to diffuse to the surface of the resulting LiCoO2 film.

8. A method of creating a multiple layer lithium cobalt oxide (LiCoO2) film in a battery core, comprising:

depositing a first LiCoO2 film layer by sputtering LiCoO2 with a sputtering gas, wherein the sputtering gas is a mixture of oxygen and argon; and

annealing the first LiCoO2 film layer at a predetermined temperature to achieve a resulting LiCoO2 film; and

depositing a second LiCoO2 film layer on the annealed first LiCoO2 film layer by sputtering LiCoO2 with a second sputtering gas that includes argon and lacks oxygen; wherein

the second LiCoO2 film layer disrupts continuous columnar structures in the annealed first LiCoO2 film layer.

9. The method of claim 8 , further comprising

depositing a third LiCoO2 film layer of on the second LiCoO2 film layer by sputtering LiCoO2 with the sputtering gas; and

annealing the third LiCoO2 film layer at the predetermined temperature.

10. The method of claim 9 , further comprising depositing additional film layers by alternating sputtering layers with the argon gas and the sputtering gas.

11. The method of claim 10 , wherein a first of the additional film layers deposited on the third LiCoO2 film layer is sputtered with the argon gas.

12. The method of claim 8 , wherein the predetermined temperature is at least 300° C.

13. The method of claim 8 , wherein the first LiCoO2 film layer is deposited on a substrate surface having a textured design such that the textured design on the surface facilitates a desired crystallized structure of the resulting LiCoO2 film.

14. The method of claim 13 , wherein the textured design is formed on the substrate surface by at least one of we etching, sputter etching, or mechanical roughing.

15. The method of claim 8 , wherein the first LiCoO2 film layer is deposited on a substrate surface having a seed layer such that the seed layer facilitates a desired crystallized structure of the resulting LiCoO2 film.

16. The method of claim 15 , wherein the seed layer is at least one of sputter deposit evaporated onto the substrate surface, wet coated onto the substrate surface, or printed onto the substrate surface.

17. The method of claim 8 , wherein annealing the first LiCoO2 film layer at the predetermined temperature achieves a crystallization structure of the resulting LiCoO2 film that has planes parallel to a surface of the resulting LiCoO2 film and open channels for lithium ions to diffuse to the surface of the resulting LiCoO2 film.

18. The method of claim 8 , wherein the first LiCoO2 film layer and the second LiCoO2 film layer are deposited under at least one of different substrate temperatures, biases, or process gas pressures.

19. The method of claim 8 , wherein the first LiCoO2 film layer is thinner than the second LiCoO2 film layer.

20. A method for creating a lithium cobalt oxide (LiCoO2) film layer in a battery core, comprising:

depositing a LiCoO2 film layer on a substrate using a process including a mixture of oxygen and argon;

heating the LiCoO2 film layer to a temperature of less than 500 degrees Centigrade to anneal the LiCoO2 film layer;

depositing an additional LiCoO2 film layer on the annealed LiCoO2 film layer using an additional process including only argon as a sputtering gas; and

depositing a third LiCoO2 film layer on the additional LiCoO2 film layer using the process including the mixture of oxygen and argon.

21. The method of claim 20 , further comprising depositing a film layer on the third LiCoO2 film layer having a different composition than the third LiCoO2 film layer.

22. The method of claim 21 , wherein the film layer is one of:

a Li-rich layer;

a O2-rich layer; or

a pure Li layer.

23. The method of claim 21 , further comprising depositing a fourth LiCoO2 film layer on the film layer.