Emission source and method of forming the same

1. An emission source comprising:

a gain medium comprising a halide semiconductor material; and

a pump source configured to provide energy to the gain medium comprising the halide semiconductor material so that the gain medium generates a coherent stimulated light to emit a laser beam and the gain medium generates amplified spontaneous emission based on the energy provided,

wherein the halide semiconductor material comprises a lead-free perovskite material,

and wherein the gain medium further comprises an additive to control trap density.

2. The emission source according to claim 1 , wherein the pump source is an optical source configured to provide light as energy to the gain medium.

3. The emission source according to claim 1 , wherein the pump source is an electrical source configured to provide electrical energy to the gain medium.

4. The emission source according to claim 1 , the emission source further comprising:

a resonant cavity, the gain medium arranged within the resonant cavity;

wherein the resonant cavity is defined by a first reflective structure and a second reflective structure, the gain medium arranged between the first reflective structure and the second reflective structure along an optical axis.

5. The emission source according to claim 4 , wherein the first reflective structure is arranged to reflect light incident on the first reflective structure towards the second reflective structure along the optical axis and the second reflective structure is arranged to reflect light incident on the second reflective surface towards the first reflective surface along the optical axis.

6. The emission source according to claim 4 , wherein the first reflective structure is partially transparent so that light incident in the first reflective structure is partially transmitted through the first reflective structure and partially reflected towards the second reflective structure along the optical axis.

7. The emission source according to claim 1 , wherein the lead-free perovskite material comprises a cation of CsSn 3+ .

8. The emission source according to claim 1 , wherein the lead-free perovskite material comprises one or more halide anions selected from a group consisting of F − , I − , Cl − and Br − .

9. The emission source according to claim 1 , wherein the emission source is configured to generate light of a wavelength from a range of about 250 nm to about 1 mm.

10. The emission source according to claim 1 , wherein the lead-free perovskite material is CsSnI 3 .

11. The emission source according to claim 1 , wherein the gain medium has undergone a post film treatment.

12. The emission source according to claim 1 , wherein the additive comprises SnF 2 .

13. The emission source according to claim 12 , wherein the weight concentration of SnF 2 is equal to or below 20%.

14. A method of forming an emission source, the method comprising:

providing a gain medium comprising a halide semiconductor material; and

providing a pump source configured to provide energy to the gain medium comprising the halide semiconductor material so that the gain medium generates a coherent stimulated light to emit a laser beam and the gain medium generates amplified spontaneous emission based on the energy provided,

wherein the halide semiconductor material comprises a lead-free perovskite material,

and wherein the gain medium further comprises an additive to control trap density.

15. The method according to claim 14 , wherein the lead-free perovskite material comprises a cation of CsSn 3+ .

16. The method according to claim 14 , wherein the lead-free perovskite material comprises one or more halide anions selected from a group consisting of F − , I − , Cl − and Br.

17. The method according to claim 14 , wherein the lead-free perovskite material is CsSnI 3 .

18. The method according to claim 14 , wherein the additive comprises SnF 2 .