Systems and methods for the synthesis of high thermoelectric performance doped-SnTe materials
View Patent ↗A thermoelectric composition comprising tin (Sn), tellurium (Te) and at least one dopant that comprises a peak dimensionless figure of merit (ZT) of 1.1 and a Seebeck coefficient of at least 50 μV/K and a method of manufacturing the thermoelectric composition. A plurality of components are disposed in a ball-milling vessel, wherein the plurality of components comprise tin (Sn), tellurium (Te), and at least one dopant such as indium (In). The components are subsequently mechanically and thermally processed, for example, by hot-pressing. In response to the mechanical-thermally processing, a thermoelectric composition is formed, wherein the thermoelectric composition comprises a dimensionless figure of merit (ZT) of the thermoelectric composition is at least 0.8, and wherein a Seebeck coefficient of the thermoelectric composition is at least 50 μV/K at any temperature.
1. A thermoelectric material comprising:
tin (Sn), tellurium (Te), and a dopant (D) according to the formula D x Sn 1−x Te;
wherein the dopant (D) comprises indium and x is from 0.001 to 0.005; and
wherein a Seebeck coefficient of the thermoelectric material is at least about 50 μV/K.
2. The thermoelectric material of claim 1 , wherein x is from 0.001 to 0.003.
3. The thermoelectric material of claim 1 , further comprising an average grain size from about 50 nm to about 10 microns.
4. A thermoelectric material comprising:
tin (Sn), tellurium (Te), and indium (In) according to the formula In x Sn 1−x Te;
wherein x is from 0.001 to 0.005;
wherein a dimensionless figure of merit (ZT) of the thermoelectric material is at least about 0.8; and wherein the thermoelectric material does not comprise lead (Pb).
5. The thermoelectric material of claim 4 , wherein x is from 0.001 to 0.003.
6. The thermoelectric material of claim 4 , further comprising an average grain size from about 50 nm to about 10 microns.