Transfer method, manufacturing method, device and electronic apparatus of MEMS
A transfer method, manufacturing method, device and electronic apparatus of MEMS. The method for MEMS transfer, comprising: depositing a laser-absorbing layer on a first surface of a laser-transparent carrier; forming a MEMS structure on the laser-absorbing layer; attaching the MEMS structure to a receiver; and performing a laser lift-off from the side of the carrier, to remove the carrier. A transfer of high-quality MEMS structure can be achieved in a simple, low cost manner.
1. A method for Micro-electromechanical systems (MEMS) transfer, the method comprising the steps of:
depositing a laser-absorbing layer on a first surface of a laser-transparent carrier;
forming a MEMS structure on the laser-absorbing layer;
attaching the MEMS structure to a receiver; and
performing a laser lift-off from the side of the carrier, to remove the carrier.
2. The method as recited in claim 1 , wherein the step of depositing a laser-absorbing layer on a first surface of a laser-transparent carrier further comprises: depositing the laser-absorbing layer by means of Low Pressure Chemical Vapor Deposition or Atmospheric Pressure Chemical Vapor Deposition.
3. The method as recited in claim 1 , wherein the temperature employed in the process of depositing the laser-absorbing layer is equal to or higher than 570° C.
4. The method as recited in claim 1 , wherein the material of the laser-absorbing layer includes at least one of dielectrics, metal and/or alloy, or polymer.
5. The method as recited in claim 1 , wherein the material of the laser-absorbing layer includes at least one of poly-silicon or metal oxide.
6. The method as recited in claim 1 , wherein the step of forming a MEMS structure on the laser-absorbing layer further comprises: processing the MEMS structure on the carrier directly.
7. The method as recited in claim 6 , wherein the processing step includes at least one of firing processing, annealing processing, or epitaxial material deposition.
8. The method as recited in claim 6 , wherein the temperature of the processing step is equal to or higher than 420° C.
9. The method as recited in claim 8 , wherein the temperature of the processing step is equal to or higher than 600° C.
10. The method as recited in claim 9 , wherein the temperature of the processing step is equal to or higher than 700° C.
11. The method as recited in claim 9 , wherein the temperature of the processing step is equal to or higher than 1000° C.
12. The method as recited in claim 1 , wherein:
the receiver is a receiving wafer;
the step of performing a laser lift-off from the side of the carrier is performed at wafer-level; and
the method further comprises the step of, after removing the carrier, performing singulation of the MEMS structure on the receiving wafer.
13. The method as recited in claim 1 , wherein:
the receiver is an assembly substrate;
the step of forming a MEMS structure on the laser-absorbing layer further comprises performing singulation of the MEMS structure; and
the step of performing a laser lift-off from the side of the carrier is performed at assembly-level.
14. The method as recited in claim 1 , wherein the carrier is at least one of sapphire, SiC, glass, or quartz.
15. The method as recited in claim 1 , wherein:
the carrier is silicon substrate, and
antireflection layers are coated on both sides of the silicon substrate.
16. A method for manufacturing a MEMS device, the method comprising the step of transferring a MEMS structure to an encapsulation substrate by using the method according to claim 1 .
17. A MEMS device manufactured by using the method according to claim 16 .
18. An electronic apparatus including a MEMS device according to claim 17 .