Semiconductor device
A semiconductor device includes a first transistor and a second transistor connected in series between a first voltage source and a second voltage source. A diode is connected between a gate of the first transistor and the second voltage source. A capacitor is connected to the gate of the first transistor. A first driver is connected to the gate of the first transistor through the capacitor. A second driver is connected to a gate of the second transistor. A threshold voltage of the second transistor is higher than a threshold voltage of the first transistor.
1. A semiconductor device, comprising:
a first transistor and a second transistor connected in series between a first voltage source and a second voltage source;
a diode connected between a gate of the first transistor and the second voltage source;
a first capacitor connected to the gate of the first transistor;
a first driver connected to the gate of the first transistor through the first capacitor; and
a second driver connected to a gate of the second transistor, wherein
a threshold voltage of the second transistor is higher than a threshold voltage of the first transistor, wherein
the first transistor is in a conducting state when zero voltage is applied to the gate of the first transistor, and
the second transistor is in a non-conducting state when zero voltage is applied to the gate of the second transistor.
2. The semiconductor device according to claim 1 , wherein the first transistor is a high electron mobility transistor (HEMT).
3. The semiconductor device according to claim 2 , wherein the HEMT is GaN-based.
4. The semiconductor device according to claim 2 , wherein the second transistor is a metal insulator semiconductor field effect transistor (MISFET).
5. The semiconductor device according to claim 1 , wherein the second transistor is a metal insulator semiconductor field effect transistor (MISFET).
6. The semiconductor device according to claim 1 , wherein
the first transistor is a high electron mobility transistor (HEMT), and
the second transistor is a metal insulator semiconductor field effect transistor (MISFET).
7. The semiconductor device according claim 1 , wherein
an anode of the diode is connected to the gate of the first transistor, and
a cathode of the diode is connected to the second voltage source.
8. The semiconductor device according to claim 1 , further comprising a delay circuit connected to an input of the second driver.
9. The semiconductor device according to claim 8 , wherein the delay circuit is configured to delay a control signal provided to the second transistor for switching the second transistor from a conductive state to a nonconductive state.
10. The semiconductor device according to claim 9 , wherein the delay circuit delays the control signal for a time that is longer than a switching period of the control signal.
11. The semiconductor device according to claim 8 , further comprising:
an inverter having an output connected to an input of the first driver, wherein the delay circuit includes:
a second capacitor connected between an input of the second driver and the second voltage source;
a third transistor connected in parallel with the second capacitor between the input of the second driver and the second voltage source, a gate of the third transistor connected to an input of the inverter; and
a constant current source connected to a drain of the third transistor and the input of the second driver.
12. A semiconductor device, comprising:
a first transistor that is a normally-on element;
a second transistor connected in series with the first transistor between a first voltage terminal and a second voltage terminal, the second transistor being a normally-off element;
a diode connected between a gate of the first transistor and the second voltage terminal;
a first capacitor connected to the gate of the first transistor;
a first driver connected to the gate of the first transistor through the first capacitor and configured to output a first drive signal inversely corresponding to a first control signal provided to an input of the first driver; and
a second driver connected to a gate of the second transistor and configured to output a second drive signal inversely corresponding to a second control signal provided to an input of the second driver.
13. The semiconductor device according to claim 12 , wherein the input of the first driver and the input of the second driver are connected in common and the first and second control signals match each other.
14. The semiconductor device according to claim 12 , further comprising a delay circuit connected to the input of the second driver and configured to receive the first control signal and output a delayed first control signal as the second control signal.
15. The semiconductor device according to claim 12 , wherein
the first transistor is a high electron mobility transistor (HEMT), and
the second transistor is a metal insulator semiconductor field effect transistor (MISFET).
16. The semiconductor device according to claim 12 , wherein
an anode of the diode is connected to the gate of the first transistor, and
a cathode of the diode is connected to the second voltage source.
17. A semiconductor device, comprising:
a first switching element having a conductive path connectable to a load terminal, the conductive path being switchable between a conducting state and a non-conducting state according to a first control voltage applied to a control terminal of the first switching element, the conductive path of the first switching element being in the conducting state when the first control voltage is greater than or equal to a first threshold voltage and in the non-conducting state when the first control voltage is less than the first threshold voltage;
a second switching element having a conductive path connected in series with the conductive path of the first switching element between the load terminal and a ground terminal, the conductive path of the second switching element being switchable between a conducting state and a non-conducting state according to a second control voltage applied to a control terminal of the second switching element, the conductive path of the second switching element being in the conducting state when the second control voltage is greater than or equal to a second threshold voltage and in the non-conducting state when the second control voltage is less than the first control voltage, the second threshold voltage being higher than the first threshold voltage;
a diode having an anode connected to the control terminal of the first switching element and a cathode connected to the ground terminal;
a first capacitor having a first side connected to the first control terminal and the anode of the diode;
a first inverter having an output connected to a second side of the first capacitor and an input connected to a control signal terminal at which a first control signal can be supplied, the first inverter configured to output the first control voltage in accordance with the first control signal; and
a second inverter having an output connected to the control terminal of the second switching element and an input at which a second control signal can be supplied, the second inverter configured to output the second control voltage in accordance with the second control signal.
18. The semiconductor device according to claim 17 , wherein the input of the first inverter is connected in common with the second inverter and the first and second control signals match each other.
19. The semiconductor device according to claim 17 , further comprising a delay circuit connected to the input of the second inverter and configured to receive the first control signal and output a delayed first control signal as the second control signal.