Resonant body high electron mobility transistor
View Patent ↗A resonant body high electron mobility transistor is described with resonance frequencies in gigahertz regime, limited by the cutoff frequency of the readout transistor. Piezoelectric materials form the resonating membrane of the device. Different modes of acoustic resonance, such as a thickness-mode, can be excited and amplified by applying an AC signal to the transducer electrode and proper biasing of all electrodes. The drain electrode reads out the acoustic resonance and amplifies it. The drain electrode is placed at or near where the piezoelectric charge pickup is maximum; whereas, the source electrode is placed at a nodal point with minimum displacement.
1. A high electron mobility resonant body transistor device, comprising:
a substrate;
a first piezoelectric layer disposed onto the surface of the substrate;
a piezoelectric transduction layer disposed onto the surface of the first piezoelectric layer and forming a two dimensional electron gas sheet at the interface between the first piezoelectric layer and the piezoelectric transduction layer, where the first piezoelectric layer and the piezoelectric transduction layer define a resonating membrane;
a source electrode, a top gate electrode, and a drain electrode collectively disposed directly on the piezoelectric transduction layer and collectively forming a transistor;
a piezoelectric transducer comprised of a back gate electrode and, in response to an applied AC input signal, is configured to induce strain on the resonating membrane to actuate a thickness resonance mode, wherein the back gate electrode is disposed on the piezoelectric transduction layer at a location where the induced strain has a maximum value.
2. The resonant body transistor device of claim 1 wherein substrate having a cavity therein and the resonating membrane encloses the cavity.
3. The resonant body transistor device of claim 1 wherein the back gate electrode forms a Schottky contact with the piezoelectric transduction layer and is biased to a depletion region.
4. The resonant body transistor device of claim 1 wherein the drain electrode is disposed at an opposing side of the resonating membrane in relation to the back gate electrode and forms an ohmic contact with the piezoelectric transduction layer.
5. The resonant body transistor device of claim 1 wherein source electrode is disposed between the back gate electrode and the drain electrode on the resonating stack, and forms an ohmic contact with the piezoelectric transduction layer.
6. The resonant body transistor device of claim 1 wherein top gate electrode is disposed between the source electrode and the drain electrode on the resonating membrane and proximate to a second location wherein the induced strain has a maximum value.
7. The resonant body transistor device of claim 1 wherein top gate electrode forms a Schottky contact with the piezoelectric transduction layer.
8. The resonant body transistor device of claim 1 wherein drain-source current is modulated in response to the applied AC input signal, showing resonance peaks at harmonics of the AC input signal frequency.
9. The resonant body transistor device of claim 1 wherein the applied AC input signal overlaps with thickness-mode resonance harmonic frequencies of the resonating membrane.
10. The resonant body transistor device of claim 1 wherein the first piezoelectric layer is comprised of GaN and the piezoelectric transduction layer is comprised of AlGaN.
11. The resonant body transistor device of claim 1 wherein the piezoelectric transducer is implemented by a set of interdigitated transducers disposed on the resonating membrane.
12. The resonant body transistor device of claim 1 wherein the transistor is multi-finger implemented by a number of gate, drain, and/or source fingers.
13. A high electron mobility resonant body transistor device, comprising:
a substrate;
a first piezoelectric layer disposed onto the surface of the substrate;
a piezoelectric transduction layer disposed onto the surface of the first piezoelectric layer and forming a two dimensional electron gas sheet at the interface between the first piezoelectric layer and the piezoelectric transduction layer, where the first piezoelectric layer and the piezoelectric transduction layer define a resonating membrane;
a source electrode, a top gate electrode, a drain electrode collectively disposed directly on the piezoelectric transduction layer, wherein top gate electrode forms a Schottky contact with the piezoelectric transduction layer; and
a piezoelectric transducer comprised of a back gate electrode and, in response to an applied AC input signal, is configured to induce strain on the resonating membrane to actuate a thickness resonance mode, wherein the back gate electrode forms a Schottky contact with the piezoelectric transduction layer and is biased to a depletion region.
14. The resonant body transistor device of claim 13 wherein substrate having a cavity therein and the resonating membrane encloses the cavity.
15. The resonant body transistor device of claim 13 wherein the back gate electrode is disposed proximate to a location where the induced strain has a maximum value.
16. The resonant body transistor device of claim 13 wherein the drain and source electrodes form ohmic contacts with the piezoelectric transduction layer.
17. The resonant body transistor device of claim 13 wherein the top gate electrode and the drain electrode are disposed on the resonating membrane such that a second location wherein the induced strain has a maximum value is in between the top gate electrode and the drain electrode.
18. The resonant body transistor device of claim 13 wherein drain-source current is modulated in response to the applied AC input signal, showing resonance peaks at harmonics of the AC input signal frequency.
19. The resonant body transistor device of claim 18 wherein the applied AC input signal overlaps with thickness-mode resonance harmonic frequencies of the resonating membrane.
20. The resonant body transistor device of claim 13 wherein the first piezoelectric layer is comprised of GaN and the piezoelectric transduction layer is comprised of AlGaN.