Semiconductor device and fabrication method thereof
A semiconductor device includes first fin-shaped structures and second fin-shaped structures, which are separately disposed on a semiconductor substrate. Each of the first and second fin-shaped structures includes a base portion and a top portion protruding from the top portion. The base portions of the second fin-shaped structures are wider than the top portions of the second fin-shaped structures, and the top portions of the second fin-shaped structures are as wide as the top portions of the first fin-shaped structures. Each second fin-shaped structure further includes a recessed region on its sidewall.
1. A semiconductor device, comprising:
a plurality of first fin-shaped structures disposed on a semiconductor substrate, wherein each of the first fin-shaped structures comprises:
a first base portion disposed on the semiconductor substrate; and
a first top portion extending from the first base portion of the first fin-shaped structure, wherein the first top portion of each of the first fin-shaped structure has a first width;
a plurality of second fin-shaped structures disposed on the semiconductor substrate, wherein each of the second fin-shaped structures comprises:
a second base portion disposed on the semiconductor substrate; and
a second top portion extending from the second base portion of the second fin-shaped structure, wherein the second top portion of each of the second fin-shaped structure has the first width, wherein the second top portion of the second fin-shaped structure and the second base portion of the second fin-shaped structure are one structure and consist of the same material; and
a recessed region disposed on a sidewall of each of the second fin-shaped structures so that a number of the second fin-shaped structures have the base portions narrower than the top portions and the other second fin-shaped structures have the base portions wider than the top portions; and
a shallow trench isolation disposed between the first fin-shaped structures and the second fin-shaped structures so that portions of each of the first and second top portions protrude from the surface of the shallow trench isolation, wherein the second base portions of the second fin-shaped structures are separately disposed on the semiconductor substrate, wherein the recessed region of the second fin-shaped structure having the base portion wider than the top portion is embedded in the shallow trench isolation.
2. The semiconductor device of claim 1 , wherein the second base portions of the second fin-shaped structures and the second top portions of the second fin-shaped structures have smooth sidewalls.
3. The semiconductor device of claim 1 , wherein the shallow trench isolation disposed between the second fin-shaped structures is in direct contact with the semiconductor substrate.
4. The semiconductor device of claim 1 , wherein a top surface of the shallow trench isolation is higher than top surfaces of the second base portions of the second fin-shaped structures.
5. The semiconductor device of claim 1 , further comprising a gate structure covering the top portions of both the first fin-shaped structure and the second fin-shaped structure protruding from the shallow trench isolation.
6. The semiconductor device of claim 5 , wherein the gate structure comprises:
a gate dielectric conformally disposed on the top portions of both the first fin-shaped structure and the second fin-shaped structure; and
a gate electrode disposed on the gate dielectric.
7. The semiconductor device of claim 1 , wherein the top portion of the second fin-shaped structure extends directly from the base portion of the second fin-shaped structure.
8. The semiconductor device of claim 1 , wherein the top portion of the second fin-shaped structure and the base portion of the second fin-shaped structure are made of same material as the semiconductor substrate.
9. The semiconductor device of claim 1 , wherein one of the second fin-shaped structures having the base portion narrower than the top portion is disposed directly next to one of the other second fin-shaped structures having the base portion wider than the top portion.