IP Library › Granted Patent US 9,923,174
Granted Patent B2
US 9,923,174 · App. 15/141,157 · Granted Mar 20, 2018

Method for manufacturing light-emitting device

Inventors: Akihiro Chida (Kanagawa, JP); Kaoru Hatano (Kanagawa, JP); Tomoya Aoyama (Kanagawa, JP); Ryu Komatsu (Kanagawa, JP); Masatoshi Kataniwa (Tochigi, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L51/56H01L27/1225H01L27/3246H01L27/3276H01L51/5203H01L51/5237H01L51/5246H01L51/5253H01L2227/323H01L2227/326H01L2251/5338H01L2251/5361
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Quick Facts
Patent No.
US 9,923,174
App. No.
15/141,157
Granted
Mar 20, 2018
Kind
B2
Abstract

A method for exposing an electrode terminal covered with an organic film in a light-emitting device without damaging the electrode terminal is provided. In a region of the electrode terminal to which electric power from an external power supply or an external signal is input, an island-shaped organic compound-containing layer is formed and the organic film is formed thereover. The organic film is removed by utilizing low adhesion of an interface between the organic compound-containing layer and the electrode terminal, whereby the electrode terminal can be exposed without damage to the electrode terminal.

Claims (38)

1. A method for manufacturing a light-emitting device, comprising:

forming an electrode terminal and a first electrode layer;

forming a first layer over the electrode terminal and a second layer over the first electrode layer, the first layer and the second layer each containing a light-emitting substance;

forming a second electrode layer over the second layer, wherein a light-emitting element comprises the first electrode layer, the second layer, and the second electrode layer;

providing a support over the light-emitting element with a resin layer therebetween, the resin layer overlapping with the second electrode layer and the electrode terminal;

making a cut overlapping with the electrode terminal in at least the support; and

partly removing the resin layer and the first layer over the electrode terminal by using the cut, so that an opening overlapping with the electrode terminal is formed.

2. The method according to claim 1 , wherein:

the first layer is in contact with the electrode terminal, and

the second layer is in contact with the first electrode layer.

3. The method according to claim 1 , wherein the resin layer includes at least one of a light curable adhesive, a reactive curable adhesive, a heat curable adhesive, and an anaerobic adhesive.

4. The method according to claim 1 , wherein the support is flexible.

5. The method according to claim 1 , further comprising:

forming a conductive layer in the opening to be in contact with the electrode terminal.

6. The method according to claim 1 , further comprising:

removing the first layer remaining on the electrode terminal after forming the opening.

7. The method according to claim 1 , wherein the first layer and the second layer contain the same light-emitting substance.

8. A method for manufacturing a light-emitting device, comprising:

forming a transistor and an electrode terminal;

forming an insulating layer over the transistor;

forming a first electrode layer over the insulating layer, the first electrode layer electrically connected to the transistor;

forming a first layer over the electrode terminal and a second layer over the first electrode layer, the first layer and the second layer each containing a light-emitting substance;

forming a second electrode layer over the second layer, wherein a light-emitting element comprises the first electrode layer, the second layer, and the second electrode layer;

providing a support over the light-emitting element with a resin layer therebetween, the resin layer overlapping with the second electrode layer and the electrode terminal;

making a cut overlapping with the electrode terminal in at least the support; and

partly removing the resin layer and the first layer over the electrode terminal by using the cut, so that an opening overlapping with the electrode terminal is formed.

9. The method according to claim 8 , wherein the transistor comprises an oxide semiconductor layer.

10. The method according to claim 8 , wherein the insulating layer includes a polyimide resin.

11. The method according to claim 8 , wherein:

the first layer is in contact with the electrode terminal, and

the second layer is in contact with the first electrode layer.

12. The method according to claim 8 , wherein the resin layer includes at least one of a light curable adhesive, a reactive curable adhesive, a heat curable adhesive, and an anaerobic adhesive.

13. The method according to claim 8 , wherein the support is flexible.

14. The method according to claim 8 , further comprising:

forming a conductive layer in the opening to be in contact with the electrode terminal.

15. The method according to claim 8 , further comprising:

removing the first layer remaining on the electrode terminal after forming the opening.

16. The method according to claim 8 , wherein the first layer and the second layer contain the same light-emitting substance.

Priority Claims (2)
JP 2012-105553 · May 4, 2012 · national
JP 2013-053332 · Mar 15, 2013 · national
Continuity (2)
Continuation 13871248 · Apr 26, 2013
Related Publication 20160240822A1 · Aug 18, 2016