Treating copper interconnects
Techniques relate to treating metallic interconnects of semiconductors. A metallic interconnect is formed in a layer. A metallic cap is disposed on top of the metallic interconnect. Any metallic residue, formed during the disposing of the metallic cap, is converted into insulating material.
1. A semiconductor device having metallic interconnects, the semiconductor device comprising:
a metallic interconnect formed in a layer;
a metallic cap disposed on top of the metallic interconnect; and
insulating material formed at one or more locations on the layer, wherein the insulating material includes metallic residue that has been treated;
wherein the insulating material is selected from a group consisting of a silicide that is not conductive and a silicate that is not conductive.
2. The semiconductor device of claim 1 , wherein the insulating material is formed of a surface of the metallic residue.
3. The semiconductor device of claim 1 , wherein the insulating material is formed of an entirety of the metallic residue.
4. The semiconductor device of claim 1 , wherein the insulating material is formed of a surface of first ones of the metallic residue.
5. The semiconductor device of claim 4 , wherein the insulating material is formed of an entirety of second ones of the metallic residue.
6. The semiconductor device of claim 1 , wherein an outer lining of the metallic cap includes the insulating material.
7. The semiconductor device of claim 6 , wherein a conductive via is formed through the outer lining of the metallic cap to reach conductive material of the metallic cap.
8. The semiconductor device of claim 1 , wherein the insulating material includes an oxide.
9. The semiconductor device of claim 1 , wherein the layer is a dielectric.
10. The semiconductor device of claim 9 , wherein the layer has a dielectric constant less than 2.5.
11. The semiconductor device of claim 9 , wherein the layer has a dielectric constant of about 1.
12. The semiconductor device of claim 1 , wherein a barrier layer separates the metallic interconnect from the layer.
13. The semiconductor device of claim 12 , wherein the barrier layer is selected from the group consisting of Ta, Ti, Co, W, Ru, and combinations thereof.
14. The semiconductor device of claim 1 , wherein the metallic interconnect is selected from the group consisting of Cu, W, Al, Co, Ru, and combinations thereof.
15. The semiconductor device of claim 1 , wherein the metallic cap is selected from the group consisting of Co, Ru, and Mn.
16. The semiconductor device of claim 1 , wherein the metallic cap includes a first material and a second material; and
wherein the first material is Co and the second material is selected from the group consisting of W, P, and B.
17. The semiconductor device of claim 1 , wherein the metallic cap has a thickness ranging from 5 to 10 nanometers.