Radiation detector, imaging unit, and imaging and display system
There is provided a radiation detector including: a plurality of photoelectric conversion devices, each photoelectric conversion device formed at least partially within an embedding layer and having a light receiving surface situated at least partially outside of the embedding layer, and a plurality of scintillator crystals, at least a first scintillator crystal of the plurality of scintillator crystals in contact with at least one light receiving surface at a proximal end, wherein a cross-section of the first scintillator crystal at the proximal end is smaller than a cross-section of the first scintillator crystal at a distal end.
1. A radiation detector, comprising:
an embedding layer;
a plurality of photoelectric conversion devices,
wherein at least a first photoelectric conversion device of the plurality of photoelectric conversion devices is partially within the embedding layer, and
wherein the at least first photoelectric conversion device comprises a light receiving surface that is at least partially outside of the embedding layer; and
a plurality of scintillator crystals, wherein a first scintillator crystal of the plurality of scintillator crystals is in contact with the light receiving surface at a proximal end of the first scintillator crystal,
wherein a first cross-section of the first scintillator crystal at the proximal end is smaller than a second cross-section of the first scintillator crystal at a distal end of the first scintillator crystal,
wherein the first scintillator crystal comprises a crystal interface that extends, on at least one outer surface of the first scintillator crystal, from the light receiving surface to the distal end, and
wherein the crystal interface is configured to reflect incident light towards the light receiving surface.
2. The radiation detector of claim 1 ,
wherein the first scintillator crystal is configured to convert incident radiation into visible light, and
wherein the incident radiation comprises at least one of alpha rays, beta rays, gamma rays, or X-rays.
3. The radiation detector of claim 1 , further comprising an air space between the first scintillator crystal and a second scintillator crystal of the plurality of scintillator crystals, wherein the second scintillator crystal is adjacent to the first scintillator crystal.
4. The radiation detector of claim 3 , wherein the first scintillator crystal is in contact with the second scintillator crystal at the distal end of the first scintillator crystal.
5. The radiation detector of claim 1 , wherein a shape of the at least one outer surface of the first scintillator crystal between the proximal end and the distal end, is a curve.
6. The radiation detector of claim 1 , further comprising a light reflecting surface in contact with the first scintillator crystal at the distal end.
7. The radiation detector of claim 1 , wherein the embedding layer comprises a light blocking material.
8. The radiation detector of claim 1 , wherein the embedding layer comprises a silicone-based resin.
9. The radiation detector of claim 1 , wherein the at least first photoelectric conversion device further comprises an insulating layer, a semiconductor layer, and an electrode that is coupled to the semiconductor layer.
10. The radiation detector of claim 1 , further comprising:
a plurality of switch devices connected in series to the plurality of photoelectric conversion devices;
a wiring substrate comprising a plurality of wirings on a support substrate, wherein each of the plurality of wirings is electrically connected to a respective switch device of the plurality of switch devices; and
a circuit substrate comprising a plurality of conversion circuits connected to ends of the plurality of wirings,
wherein the plurality of conversion circuits are configured to convert a current signal into a voltage signal, and
wherein the plurality of photoelectric conversion devices and the plurality of switch devices comprise crystalline silicon.
11. The radiation detector of claim 1 , further comprising:
a wiring substrate comprising a plurality of switch devices and a plurality of wirings,
wherein each of the plurality of switch devices is connected in series to a respective photoelectric conversion device of the plurality of photoelectric conversion devices, and
wherein each of the plurality of wirings is on a support substrate and is connected to a respective switch device of the plurality of switch devices; and
a circuit substrate comprising a plurality of conversion circuits connected to respective ends of the plurality of wirings,
wherein the plurality of conversion circuits are configured to convert a current signal into a voltage signal, and
wherein each of the plurality of photoelectric conversion devices comprises crystalline silicon.
12. An imaging unit, comprising:
a radiation detector; and
a drive circuit configured to drive the radiation detector,
wherein the radiation detector comprises a plurality of pixels, and wherein at least a first pixel of the plurality of pixels comprises:
an embedding layer;
a photoelectric conversion device partially within the embedding layer, wherein the photoelectric conversion device comprises a light receiving surface that is at least partially outside of the embedding layer; and
a first scintillator crystal in contact with the light receiving surface at a proximal end of the first scintillator crystal,
wherein a first cross-section of the first scintillator crystal at the proximal end is smaller than a second cross-section of the first scintillator crystal at a distal end of the first scintillator crystal,
wherein the first scintillator crystal comprises a crystal interface that extends, on at least one outer surface of the first scintillator crystal, from the light receiving surface to the distal end, and
wherein the crystal interface is configured to reflect incident light towards the light receiving surface.
13. The imaging unit of claim 12 , further comprising an air gap between the first scintillator crystal and a second scintillator crystal, wherein the second scintillator crystal is in a second pixel that is adjacent to the first pixel.
14. The imaging unit of claim 13 , wherein the first scintillator crystal is in contact with the second scintillator crystal, at the distal end of the first scintillator crystal.
15. The imaging unit of claim 12 , wherein a shape of the at least one outer surface of the first scintillator crystal between the proximal end and the distal end, is a curve.
16. The imaging unit of claim 12 , wherein the embedding layer comprises a light blocking material.
17. A system, comprising:
an imaging unit configured to obtain an imaging signal; and
a display unit configured to display an image based on the imaging signal,
wherein the imaging unit comprises:
a radiation detector; and
a drive circuit configured to drive the radiation detector,
wherein the radiation detector comprises a plurality of pixels, and wherein at least a first pixel of the plurality of pixels comprises:
an embedding layer;
a photoelectric conversion device partially within the embedding layer, wherein the photoelectric conversion device comprises a light receiving surface that is at least partially outside of the embedding layer; and
a first scintillator crystal in contact with the light receiving surface at a proximal end of the first scintillator crystal,
wherein a first cross-section of the first scintillator crystal at the proximal end is smaller than a second cross-section of the first scintillator crystal at a distal end of the first scintillator crystal,
wherein the first scintillator crystal comprises a crystal interface that extends, on at least one outer surface of the first scintillator crystal, from the light receiving surface to the distal end, and
wherein the crystal interface is configured to reflect incident light towards the light receiving surface.