Methods and apparatus for preparing power transmission cables

1. A method for preparing a polymer insulated cable including a semiconductive layer surrounding a polymeric insulation layer, the method comprising:

cutting the semiconductive layer by grinding a circumferential dividing groove in the semiconductive layer using a rotating grinding surface, wherein the dividing groove defines first and second semiconductive sections of the semiconductive layer on opposed sides of the dividing groove; and thereafter

removing the second semiconductive section from the polymeric insulation layer while retaining the first semiconductive section on the polymeric insulation layer;

wherein the direction of rotation of the grinding surface is transverse to a groove plane defined by a circumference of the dividing groove.

2. The method of claim 1 wherein the polymer insulated cable includes a cable jacket surrounding the semiconductive layer,

and the method includes cutting away an end section of the cable jacket to expose the semiconductive layer prior to the step of cutting the semiconductive layer.

3. The method of claim 1 wherein the insulation layer is formed of ethylene propylene rubber (EPR).

4. The method of claim 1 including rotating the grinding surface circumferentially around the cable while rotating the grinding surface in contact with the semiconductive layer.

5. The method of claim 1 wherein the axis of rotation of the grinding surface is transverse to a lengthwise cable axis of the cable.

6. The method of claim 1 wherein the grinding surface has a rounded cross-sectional profile having a rounded side surface when sectioned along a groove plane defined by a circumference of the dividing groove.

7. The method of claim 1 wherein the grinding surface is formed of tungsten carbide.

8. The method of claim 1 including rotating the grinding surface using a power driver.

9. The method of claim 8 including releasably coupling the power driver and the grinding surface to the cable using a mounting tool.

10. The method of claim 1 including:

cutting a circumferential preliminary groove in the semiconductive layer using the rotating grinding surface at an axial position along the cable, the preliminary groove having a first depth; and thereafter

cutting the dividing groove into the semiconductive layer within the preliminary groove at the axial position.

11. The method of claim 1 wherein the dividing groove extends fully through the semiconductive layer so that a segment of the polymeric insulation layer is exposed between the first and second semiconductive sections and through the dividing groove.

12. A method for preparing a polymer insulated cable including a semiconductive layer surrounding a polymeric insulation layer, the method comprising:

cutting the semiconductive layer by grinding a circumferential dividing groove in the semiconductive layer using a rotating grinding surface, wherein the dividing groove defines first and second semiconductive sections of the semiconductive layer on opposed sides of the dividing groove; and thereafter

removing the second semiconductive section from the polymeric insulation layer while retaining the first semiconductive section on the polymeric insulation layer;

wherein the grinding surface has a rounded cross-sectional profile having a rounded side surface when sectioned along a groove plane defined by a circumference of the dividing groove.

13. A method for preparing a polymer insulated cable including a semiconductive layer surrounding a polymeric insulation layer, and a cable jacket surrounding the semiconductive layer, the method comprising:

cutting away an end section of the cable jacket to expose the semiconductive layer; thereafter

cutting the semiconductive layer by grinding a circumferential dividing groove in the semiconductive layer using a rotating grinding surface, wherein the dividing groove defines first and second semiconductive sections of the semiconductive layer on opposed sides of the dividing groove; and thereafter

removing the second semiconductive section from the polymeric insulation layer while retaining the first semiconductive section on the polymeric insulation layer;

wherein the axis of rotation of the grinding surface is transverse to a lengthwise cable axis of the cable.