Radio-frequency switch having dynamic gate bias resistance, body contact, and compensation circuit

1. A radio-frequency (RF) switch comprising:

a plurality of field-effect transistors (FETs) disposed between a first node and a second node, each of the plurality of field-effect transistors having a respective source, drain, gate, and body, the plurality of field-effect transistors including a first field-effect transistor connected in series with a second field-effect transistor;

a switchable resistive coupling circuit connected to each of the respective gates;

a switchable resistive grounding circuit connected to each of the respective bodies; and

a compensation circuit connected at a first end to both the source of the first field-effect transistor and the drain of the second field-effect transistor, and further connected at a second end to a ground reference, the compensation circuit configured to compensate a non-linearity effect generated by at least one of the plurality of field-effect transistors.

2. The radio-frequency switch of claim 1 wherein the field-effect transistor is a silicon-on-insulator (SOI) field-effect transistor.

3. The radio-frequency switch of claim 1 wherein the switchable resistive coupling circuit includes a bias resistor in series with a first coupling switch.

4. The radio-frequency switch of claim 3 wherein the switchable resistive grounding circuit includes a body resistor in series with a second coupling switch.

5. The radio-frequency switch of claim 3 wherein each of the first and second coupling switches is OFF when the field-effect transistor is ON to yield a reduced insertion loss by floating the body and the gate.

6. The radio-frequency switch of claim 5 wherein each of the first and second coupling switches is ON when the field-effect transistor is OFF to yield a ground bias to the body and a radio-frequency ground to the gate, to thereby improve isolation performance of the radio-frequency switch.

7. The radio-frequency switch of claim 1 wherein the compensation circuit includes a non-linear capacitor.

8. The radio-frequency switch of claim 7 wherein the non-linear capacitor includes a metal-oxide-semiconductor (MOS) capacitor.

9. The radio-frequency switch of claim 8 wherein the oxide-semiconductor capacitor is configured to generate one or more harmonics to substantially cancel the non-linearity effect generated by the field-effect transistor.

10. The radio-frequency switch of claim 9 wherein the oxide-semiconductor capacitor includes an field-effect transistor structure.

11. The radio-frequency switch of claim 10 wherein the one or more harmonics generated by the oxide-semiconductor capacitor is controlled at least in part by a body bias signal provided to the field-effect transistor structure of the oxide-semiconductor capacitor.

12. The radio-frequency switch of claim 1 wherein the first node is configured to receive a radio-frequency signal having a power value and the second node is configured to output the radio-frequency signal when the field-effect transistor is in an ON state.

13. The radio-frequency switch of claim 12 wherein the at least one field-effect transistor includes N field-effect transistors connected in series, the quantity N selected to allow the switch circuit to handle the power of the radio-frequency signal.

14. A semiconductor die comprising:

a semiconductor substrate;

a plurality of field-effect transistors (FETs) formed on the semiconductor substrate, each of the plurality of field-effect transistors having a respective source, drain, gate, and body, the plurality of field-effect transistors including a first field-effect transistor connected in series with a second field-effect transistor;

a coupling circuit including a switchable resistive circuit connected to a respective gate of each of the plurality of field-effect transistors, the coupling circuit further including a switchable resistive grounding circuit connected to a respective body of each of the plurality of field-effect transistors; and

a compensation circuit connected at a first end to both the source of a first field-effect transistor and the drain of a second field-effect transistor, and further connected at a second end to a ground reference, the compensation circuit configured to compensate a non-linearity effect generated by at least one of the plurality of field-effect transistors.

15. The die of claim 14 further comprising an insulator layer disposed between the field-effect transistor and the semiconductor substrate.

16. The die of claim 15 wherein the die is a silicon-on-insulator die.

17. A radio-frequency (RF) switch module comprising:

a packaging substrate configured to receive a plurality of components;

a semiconductor die mounted on the packaging substrate, the die including a plurality of field-effect transistors (FETs) disposed between a first node and a second node, each of the plurality of field-effect transistors having a respective source, drain, gate, and body, the plurality of field-effect transistors including a first field-effect transistor connected in series with a second field-effect transistor;

a coupling circuit including a switchable resistive circuit connected to a respective gate of each of the plurality of field-effect transistors, the coupling circuit further including a switchable resistive grounding circuit connected to a respective body of each of the plurality of field-effect transistors; and

a compensation circuit connected at a first end to both the source of a first field-effect transistor and the drain of a second field-effect transistor, and further connected at a second end to a ground reference, the compensation circuit configured to compensate a non-linearity effect generated by at least one of the plurality of field-effect transistors.

18. The radio-frequency switch module of claim 17 wherein the switchable resistive coupling circuit includes a bias resistor in series with a first coupling switch.

19. The radio-frequency switch module of claim 17 wherein the compensation circuit includes a non-linear capacitor.

20. The radio-frequency switch module of claim 17 wherein the first node is configured to receive a radio-frequency signal having a power value and the second node is configured to output the radio-frequency signal when the field-effect transistor is in an ON state.