Field effect transistor and semiconductor device including the same
A field effect transistor and a semiconductor device including the same are provided. The semiconductor device may include a channel layer, which is provided on a substrate and includes a two-dimensional atomic layer made of a first material, and a source/drain layer, which is provided on the substrate and includes a second material. The first material may be one of phosphorus allotropes, the second material may be one of carbon allotropes, and the channel layer and the source/drain layer may be connected to each other by covalent bonds between the first and second materials.
1. A semiconductor device comprising:
a channel layer provided on a substrate, the channel layer including a two-dimensional atomic layer made of a first material; and
a source/drain layer provided on the substrate, the source/drain layer including a second material,
wherein the first material is one of phosphorus allotropes,
the second material is one of carbon allotropes, and
the channel layer and the source/drain layer are connected to each other by covalent bonds between the first material and the second materials.
2. The device of claim 1 , wherein the first material is phosphorene.
3. The device of claim 2 , wherein the phosphorene has an armchair structure, a diagonal structure, a zigzag structure, or any combination thereof, and
the channel layer and the source/drain layer constitute a field effect transistor, whose threshold voltage is dependent on a structure of the phosphorene.
4. The device of claim 1 , wherein the first material comprises a single atomic layer or a plurality of vertically-stacked atomic layers, and
the channel layer and the source/drain layer constitute a field effect transistor, whose threshold voltage is dependent on a number of the single atomic layer or the plurality of vertically-stacked atomic layers of the first material.
5. The device of claim 1 , wherein the second material is at least one of graphene and carbon nanotube.
6. The device of claim 1 , wherein the second material comprises graphene and carbon nanotube that is provided on and connected to the graphene by covalent bonds, and
the carbon nanotube has a longitudinal axis perpendicular a top surface of the graphene.
7. The device of claim 1 , further comprising a gate electrode provided on the substrate to cross the channel layer.
8. The device of claim 1 , wherein the channel layer and the source/drain layer constitute an active layer, and a plurality of active layers are provided, and
the plurality of active layers are provided on the substrate to be arranged in a direction parallel to a top surface of the substrate.
9. The device of claim 8 , further comprising a gate electrode extending in the direction and commonly crossing channel layers of the plurality of active layers.
10. The device of claim 1 , further comprising a plurality of interlayered insulating layers that are sequentially stacked,
the channel layer and the source/drain layer constitute an active layer and a plurality of active layers are provided, and
the plurality of active layers are interposed between the plurality of interlayered insulating layers.
11. A field effect transistor comprising:
a channel comprising a first two-dimensional atomic layer made of phosphorene; and
a source/drain comprising a second two-dimensional atomic layer made of graphene,
wherein the channel and the source/drain are connected to each other by covalent bonds between the phosphorene and the graphene.