Photoactive devices and materials
Deposition processes are disclosed herein for depositing thin films comprising a dielectric transition metal compound phase and a conductive or semiconducting transition metal compound phase on a substrate in a reaction space. Deposition processes can include a plurality of super-cycles. Each super-cycle may include a dielectric transition metal compound sub-cycle and a reducing sub-cycle. The dielectric transition metal compound sub-cycle may include contacting the substrate with a dielectric transition metal compound. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant. The thin film may comprise a dielectric transition metal compound phase embedded in a conductive or semiconducting transition metal compound phase.
1. A device including a layer comprising a dielectric transition metal compound phase embedded in a conductive or semiconducting transition metal compound phase, wherein the dielectric transition metal compound phase comprises TiF 3 and the conductive or semiconducting transition metal compound phase comprises TiN.
2. The device of claim 1 , wherein the device is a photonic device.
3. The photonic device of claim 2 , wherein the dielectric transition metal compound phase consists of particles with a diameter of about 0.1 nm to about 500 nm.
4. The photonic device of claim 2 , wherein the conductive or semiconducting transition metal compound phase surrounds discrete dielectric transition metal compound phase particles.
5. The photonic device of claim 2 , wherein the layer comprises a photoactive material; and
wherein the layer absorbs radiant energy of photons incident to a surface of the photonic device to produce electrical energy in an electrical circuit.
6. The photonic device of claim 2 , wherein the layer utilizes electrical energy in an electrical circuit to produce photons.
7. The photonic device of claim 2 , wherein the layer comprising the dielectric transition metal compound phase embedded in the conductive or semiconducting transition metal compound phase acts as a photon transparent layer; and
wherein the photon transparent layer allows photons incident on a surface of the photon transparent layer to pass through the photon transparent layer to a photoactive layer.
8. The photonic device of claim 2 , wherein the layer comprising the dielectric transition metal compound phase embedded in the conductive or semiconducting transition metal compound phase acts as a charge collecting component that collects photon-excited charge carriers.
9. The photonic device of claim 2 , wherein the layer comprising the dielectric transition metal compound phase embedded in the conductive or semiconducting transition metal compound phase acts as a waveguide component capable of transferring a photon flux incident on a first portion of the photonic device to a second portion of the photonic device.
10. The photonic device of claim 2 , further comprising a charge collecting component that collects photon-excited charge carriers, wherein the charge collecting component comprises at least one of indium tin oxide, doped tin oxide, zinc oxide, doped zinc oxide, conductive polymer, a metal grid, carbon nanotubes, graphene, or a nanowire thin film.
11. The photonic device of claim 2 , further comprising a photoactive component comprising at least one of Si, SiGe, Ge, CdTe, GaAs, GaSb, or InGaAs.
12. A photoactive material comprising a dielectric transition metal compound phase embedded in a conductive or semiconducting transition metal compound phase, wherein the dielectric transition metal compound phase comprises TiF 3 and the conductive or semiconducting transition metal compound phase comprises TiN.
13. The photoactive material of claim 12 , wherein the photoactive material absorbs radiant energy of photons to produce electrical energy in an electrical circuit.
14. The photoactive material of claim 12 , wherein the photoactive material is a photon transparent electrically conductive material.
15. The photoactive material of claim 12 , wherein the photoactive material is a waveguide material; and
wherein the waveguide material is capable of transferring a photon flux incident on a first portion of the waveguide material to a second portion of the waveguide material.
16. A vapor deposition process for depositing a layer in a photonic device, wherein the layer comprises a dielectric transition metal compound phase embedded in a conductive or semiconducting transition metal compound phase, wherein the dielectric transition metal compound phase comprises TiF 3 and the conductive or semiconducting transition metal compound phase comprises TiN.
17. The vapor deposition process of claim 16 , wherein the vapor deposition process comprises a plurality of super-cycles, each of the plurality of super-cycles comprising a dielectric transition metal compound sub-cycle and a reducing sub-cycle, wherein:
the dielectric transition metal compound sub-cycle comprises contacting a substrate with a vapor phase dielectric transition metal compound; and
the reducing sub-cycle comprises alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant.
18. The vapor deposition process of claim 17 , wherein the reducing agent comprises silane or borane.
19. The vapor deposition process of claim 17 , wherein the nitrogen reactant comprises at least one of ammonia, N 2 H 4 , nitrogen atoms, nitrogen containing plasma, and nitrogen radicals.