Method of filling recess

1. A method of filling a recess by forming a nitride film in the recess by repeating a cycle, the cycle comprising:

a film-forming raw material gas adsorption process of adsorbing a film-forming raw material gas containing an element forming the nitride film to be formed on a target substrate on which the recess is formed on a surface of the target substrate; and

a nitriding process of nitriding the adsorbed film-forming raw material gas by nitriding species generated by activating a nitriding gas to fill the recess,

wherein at least a portion of a period for forming the nitride film is used as a bottom-up growth period, for which a polymer material adsorbable to the surface of the target substrate is supplied in a gaseous state and is adsorbed to an upper portion of the recess to inhibit adsorption of the film-forming raw material gas, and for which the nitride film is grown from a bottom portion of the recess.

2. The method of claim 1 , wherein a first period for forming the nitride film is used as a conformal nitride film forming period for which a conformal nitride film is formed by repeating the film-forming raw material gas adsorption process and the nitriding process without supplying the polymer material, and a subsequent period is set as the bottom-up growth period.

3. The method of claim 1 , wherein, during the bottom-up growth period, the film-forming raw material gas adsorption process, the nitriding process, and a polymer material adsorption process of adsorbing the polymer material to the upper portion of the recess are repeated in this order.

4. A method of filling a recess by forming a nitride film in the recess formed on a surface of a target substrate, the method comprising:

a first process of forming a conformal nitride film in the recess by repeating a film-forming raw material gas adsorption process of adsorbing a film-forming raw material gas containing an element forming the nitride film to be formed, and a nitriding process of nitriding the adsorbed film-forming raw material gas by nitriding species generated by activating a nitriding gas; and

a second process of inhibiting adsorption of the film-forming raw material gas and growing the nitride film from a bottom portion of the recess by repeating the film-forming raw material gas adsorption process, the nitriding process, and a polymer material adsorption process of supplying a polymer material adsorbable to the surface of the target substrate in a gaseous state to allow the polymer material to be adsorbed to an upper portion of the recess in this order.

5. The method of claim 4 , further comprising a third process of forming a conformal nitride film by repeating the film-forming raw material gas adsorption process and the nitriding process after the second process.

6. The method of claim 1 , wherein the polymer material is adsorbed to an NH group formed on the surface of the target substrate by the nitriding process.

7. The method of claim 6 , wherein the polymer material is a polymer material having an ether bond.

8. The method of claim 7 , wherein the polymer material having an ether bond is at least one selected from a group consisting of glyme, diglyme, and triglyme.

9. The method of claim 1 , wherein the film-forming raw material gas contains Si and the nitride film is a silicon nitride film.

10. The method of claim 9 , wherein the film-forming raw material gas is at least one selected from a group consisting of dichlorosilane, monochlorosilane, trichlorosilane, silicon tetrachloride, and hexachlorodisilane.

11. The method of claim 1 , wherein an NH 3 gas is used as the nitriding gas.