Eliminate sawing-induced peeling through forming trenches

1. A package comprising:

a device die;

an encapsulating material encircling the device die;

a bottom dielectric layer over and contacting the device die and the encapsulating material;

a plurality of redistribution lines (RDLs) extending into the bottom dielectric layer and electrically coupling to the device die;

an intermediate dielectric layer comprising a first portion over the bottom dielectric layer and the plurality of RDLs; and

a top dielectric layer comprising:

a first portion over the intermediate dielectric layer; and

a second portion penetrating through the intermediate dielectric layer and the bottom dielectric layer to contact the encapsulating material.

2. The package of claim 1 , wherein the intermediate dielectric layer further comprises a second portion penetrating through the bottom dielectric layer to contact the encapsulating material.

3. The package of claim 2 , wherein the second portion of the top dielectric layer is physically spaced apart from the bottom dielectric layer by the second portion of the intermediate dielectric layer.

4. The package of claim 1 , wherein the second portion of the top dielectric layer forms a ring encircling a portion of the bottom dielectric layer.

5. The package of claim 1 , wherein a top surface of the second portion of the top dielectric layer is lower than a top surface of the intermediate dielectric layer.

6. The package of claim 5 , wherein the top surface of the second portion of the top dielectric layer is further lower than a top surface of the bottom dielectric layer.

7. The package of claim 1 , wherein the top dielectric layer further comprises a third portion penetrating through the intermediate dielectric layer to contact a top surface of the bottom dielectric layer, wherein the second portion and the third portion of the top dielectric layer are spaced apart from each other by a portion of the intermediate dielectric layer.

8. The package of claim 7 , wherein the third portion of the top dielectric layer further forms a ring encircling a portion of the intermediate dielectric layer.

9. The package of claim 8 , wherein the third portion of the top dielectric layer is encircled by the second portion of the top dielectric layer.

10. A package comprising:

a device die;

a molding compound encircling the device die;

a first dielectric layer over and in contact with both the device die and the molding compound;

a plurality of redistribution lines (RDLs) extending into the first dielectric layer to electrically couple to the device die;

a second dielectric layer having a portion over the first dielectric layer and the plurality of RDLs, wherein a first trench ring extends from a top surface of the second dielectric layer down, and the first trench ring extends to edges of the package; and

Under-Bump Metallurgies (UBMs) extending into the second dielectric layer.

11. The package of claim 10 , wherein the first trench ring fully encircles a portion of the first dielectric layer directly over the device die.

12. The package of claim 10 further comprising a third dielectric layer between the first dielectric layer and the second dielectric layer, wherein the first trench ring penetrates through the third dielectric layer.

13. The package of claim 10 , wherein the first trench ring extends below a top surface of the first dielectric layer.

14. The package of claim 10 , wherein the first dielectric layer and the second dielectric layer are polymer layers.

15. The package of claim 10 further comprising a second trench ring extending from the top surface of the second dielectric layer to stop on a top surface of the first dielectric layer, wherein the second trench ring is encircled by the first trench ring.

16. A method comprising:

encapsulating a first device die and a second device die in an encapsulating material;

forming a first dielectric layer over and contacting the first device die, the second device die, and the encapsulating material;

patterning the first dielectric layer to form a first opening, a second opening, and a first trench, with a first metal pillar in the first device die and a second metal pillar in the second device die exposed to the first opening and the second opening, respectively, and the encapsulating material exposed to the first trench;

forming a first redistribution line and a second redistribution line extending into the first opening and the second opening to contact the first metal pillar and the second metal pillar, respectively;

forming a second dielectric layer comprising a first portion over and contacting the first dielectric layer, and a second portion in the first trench; and

patterning the second dielectric layer to form a third opening, a fourth opening and a second trench, with the first redistribution line and the second redistribution line exposed to the third opening and the fourth opening, respectively, wherein after the second dielectric layer is patterned, the encapsulating material is exposed to the second trench.

17. The method of claim 16 further comprising performing a singulation to separate the first device die and the second device die into a first package and a second package, respectively, wherein the first trench and the second trench are separated into the first package and the second package, respectively.

18. The method of claim 16 , wherein the first trench is formed as a trench ring.

19. The method of claim 16 , wherein the second dielectric layer comprises a bottom surface contacting a top surface of the encapsulating material.

20. The method of claim 16 , wherein the first dielectric layer and the second dielectric layer are polymer layers.