Methods of manufacturing image sensors
In a method of manufacturing an image sensor, photodiodes may be formed on a semiconductor layer in an active pixel region and a peripheral region. A structure including insulating interlayers and wiring structures may be formed on a first surface of the semiconductor layer in the active pixel region, the peripheral region and an input/output (I/O) region. The semiconductor layer and a first insulating interlayer of the insulating interlayers on the I/O region may be partially etched to form a via hole exposing a first wiring structure of the wiring structures. A first metal layer and a second metal layer may be formed on a second surface of the semiconductor layer and the via hole. The second metal layer may be patterned to form a second pad pattern on the semiconductor layer in the I/O region. An anti-reflective layer may be formed on the first metal layer and the second pad pattern. The anti-reflective layer and the first metal layer may be patterned to form a light blocking structure including the first metal layer and the anti-reflective layer in the peripheral region, and a pad structure including a via contact, a first pad pattern, the second pad pattern and an anti-reflective pattern in the I/O region. An image failure due to the reflected light may be minimized.
1. A method of manufacturing an image sensor, the method comprising:
forming a plurality of photodiodes in a semiconductor layer in an active pixel region and a peripheral region;
forming a structure including a plurality of insulating interlayers and a plurality of wiring structures on a first surface of the semiconductor layer in the active pixel region, the peripheral region and an input/output (I/O) region;
partially etching the semiconductor layer and a first insulating interlayer of the plurality of insulating interlayers in the I/O region to form a via hole therethrough, the via hole exposing a first wiring structure of the plurality of wiring structures;
sequentially forming a first metal layer and a second metal layer on a second surface of the semiconductor layer and the via hole, the second surface being opposite the first surface;
patterning the second metal layer to form a second pad pattern on the semiconductor layer in the I/O region, so that the first metal layer is exposed in the active pixel region and the peripheral region;
forming an anti-reflective layer on the first metal layer and the second pad pattern; and
patterning the anti-reflective layer and the first metal layer to form a light blocking structure including the first metal layer and the anti-reflective layer in the peripheral region and a pad structure including a via contact, a first pad pattern, the second pad pattern and a first anti-reflective pattern in the I/O region.
2. The method of claim 1 , wherein the anti-reflective layer is formed of titanium, titanium nitride, tantalum or tantalum nitride.
3. The method of claim 1 , wherein the second metal layer is formed of a material having an etching selectivity with respect to a material of the first metal layer.
4. The method of claim 1 , wherein the first metal layer is formed of tungsten, and the second metal layer is formed of aluminum.
5. The method of claim 1 , further comprising, prior to the forming of the via hole:
partially etching the semiconductor layer to form an isolation trench therethrough to be spaced apart from the via hole, the isolation trench exposing the first insulating interlayer and to surround the via hole; and
forming an insulation layer on the second surface of the semiconductor layer and an inner wall of the isolation trench.
6. The method of claim 1 , further comprising, prior to the forming of the first metal layer, forming a first barrier layer on the second surface of the semiconductor layer and an inner wall of the via hole.
7. The method of claim 1 , further comprising, after the forming of the second metal layer, forming a second barrier layer on the second metal layer.
8. The method of claim 1 , further comprising:
forming a grid structure including a first metal pattern and a second anti-reflective pattern stacked between unit pixels in the active pixel region, during the patterning of the anti-reflective layer and the first metal layer.
9. The method of claim 1 , further comprising:
removing the first metal layer and the anti-reflective layer in the active pixel region, during the patterning of the anti-reflective layer and the first metal layer.
10. The method of claim 1 , wherein the second pad pattern overlaps the via hole, and the second pad pattern has an area greater than an area of the via hole.
11. The method of claim 1 , wherein the first pad pattern in the I/O region is disposed under the second pad pattern, and the first pad pattern in the I/O region has an area substantially the same as or greater than an area of the second pad pattern.
12. A method of manufacturing an image sensor, the method comprising:
forming a plurality of photodiodes in a semiconductor layer in an active pixel region and a peripheral region;
forming a structure including a plurality of insulating interlayers and a plurality of wiring structures on a first surface of the semiconductor layer in the active pixel region, the peripheral region and an input/output (I/O) region;
partially etching the semiconductor layer to form an isolation trench therethrough, the isolation trench exposing a first insulating interlayer of the plurality of insulating interlayers;
forming an insulation layer on a second surface of the semiconductor layer and an inner wall of the isolation trench, the second surface being opposite the first surface;
partially etching the semiconductor layer and the first insulating interlayer in the I/O region to form a via hole therethrough, the via hole exposing a first wiring structure of the plurality of wiring structures;
sequentially forming a first metal layer and a second metal layer on the insulation layer and the via hole;
patterning the second metal layer to form a second pad pattern on the semiconductor layer in the I/O region, so that the first metal layer is exposed in the active pixel region and the peripheral region;
forming an anti-reflective layer on the first metal layer and the second pad pattern; and
patterning the anti-reflective layer and the first metal layer to form a light blocking structure including the first metal layer and the anti-reflective layer in the peripheral region and a pad structure including a via contact, a first pad pattern, the second pad pattern and a first anti-reflective pattern in the I/O region.
13. The method of claim 12 , wherein the anti-reflective layer is formed of titanium, titanium nitride, tantalum or tantalum nitride.
14. The method of claim 12 , wherein the first metal layer is formed of tungsten, and the second metal layer is formed of aluminum.
15. The method of claim 12 , wherein the isolation trench has a ring shape in a plan view, and the via hole is formed at a portion of the semiconductor layer surrounded by the isolation trench.
16. The method of claim 12 , further comprising:
forming a grid structure including a first metal pattern and a second anti-reflective pattern stacked between unit pixels in the active pixel region, during the patterning of the anti-reflective layer and the first metal layer.
17. A method of manufacturing an image sensor, the method comprising:
forming a plurality of photodiodes in a semiconductor layer in an active pixel region and a peripheral region;
sequentially forming an insulating interlayer and a wiring structure on a first surface of the semiconductor layer in the active pixel region, the peripheral region and an input/output (I/O) region;
forming a via hole through the semiconductor layer and the insulating interlayer to expose the wiring structure;
sequentially forming a first metal layer and a second metal layer on a second surface of the semiconductor layer and the via hole, the second surface being opposite the first surface;
patterning the second metal layer to form a second pad pattern in the I/O region, and to expose the first metal layer in the active pixel region and the peripheral region;
forming an anti-reflective layer on the first metal layer and the second pad pattern; and
patterning the anti-reflective layer and the first metal layer to form a light blocking structure including the first metal layer and the anti-reflective layer in the peripheral region, a pad structure including a via contact, a first pad pattern, the second pad pattern and a first anti-reflective pattern in the I/O region, and a grid structure including a first metal pattern and a second anti-reflective pattern stacked between unit pixels in the active pixel region.
18. The method of claim 17 , wherein the anti-reflective layer is formed of titanium, titanium nitride, tantalum or tantalum nitride.
19. The method of claim 17 , wherein the first metal layer is formed of tungsten, and the second metal layer is formed of aluminum.
20. The method of claim 17 , further comprising, prior to the forming of the via hole:
forming an isolation trench through the semiconductor layer to be spaced apart from the via hole, the isolation trench exposing the insulating interlayer and to surround the via hole; and
forming an insulation layer on the second surface of the semiconductor layer and an inner wall of the isolation trench.