Thin film compositions and methods
Certain embodiments of the present invention include a versatile and scalable process, “patterned regrowth,” that allows for the spatially controlled synthesis of lateral junctions between electrically conductive graphene and insulating h-BN, as well as between intrinsic and substitutionally doped graphene. The resulting films form mechanically continuous sheets across these heterojunctions. These embodiments represent an element of developing atomically thin integrated circuitry and enable the fabrication of electrically isolated active and passive elements embedded in continuous, one atom thick sheets, which may be manipulated and stacked to form complex devices at the ultimate thickness limit.
1. A composition comprising:
a mechanically continuous hybrid thin film comprising a first film and a second film,
the first film comprising regions of graphene and regions of no graphene, and
the second film comprising a doped graphene located within the regions of no graphene, wherein lateral junctions of electrical connectivity are positioned between the first film and the second film.
2. The composition of claim 1 , further comprising a semiconductor substrate.
3. The composition of claim 1 , wherein the composition comprises a plurality of mechanically continuous thin films.
4. The composition of claim 3 , wherein the plurality of mechanically continuous thin films are stacked.
5. A composition comprising:
a mechanically continuous hybrid thin film comprising a first film and a second film,
the first film comprising one or more patterned regions of graphene and one or more patterned regions of no graphene, and
the second film comprising a hexagonal boron nitride located within the one or more patterned regions of no graphene forming one or more lateral junctions positioned between the first film and the second film.
6. The composition of claim 5 , further comprising a semiconductor substrate.
7. The composition of claim 5 , wherein the composition comprises a plurality of mechanically continuous thin films.
8. The composition of claim 7 , wherein the plurality of mechanically continuous thin films are stacked.
9. A continuous thin film comprising:
a first patterned film comprising of portions of graphene material and portions of no graphene material;
a second film of hexagonal boron nitride material located within the portions of no graphene of the first patterned film; and
one or more lateral junctions forming a mechanical connectivity or an electrical connectivity positioned between each edge of the portions of graphene material and each edge of the hexagonal boron nitride material.
10. The continuous thin film according to claim 9 , wherein the first patterned film is positioned on a substrate.
11. The continuous thin film according to claim 9 , wherein the first patterned film is one atom layer thick.
12. The continuous thin film according to claim 9 , wherein a layer of photoresist is positioned on the first patterned film.
13. The continuous thin film according to claim 10 , wherein the substrate is copper.
14. A mechanically continuous hybrid thin film composition comprising:
a first film comprising one or more portions of a first material and one or more portions of no material; and
a second film of a second material located within the one or more portions of no material of the first film, wherein lateral junctions are positioned between each edge of both the first film and the second film.
15. The mechanically continuous hybrid thin film composition according to claim 14 wherein the first film comprises graphene.
16. The mechanically continuous hybrid thin film composition according to claim 14 wherein the second film comprises hexagonal boron nitride.
17. The mechanically continuous hybrid thin film composition according to claim 14 wherein the second film comprises doped graphene.
18. The mechanically continuous hybrid thin film composition according to claim 14 wherein the second film comprises intrinsic graphene.