Method for production of germanium nanowires encapsulated within multi-walled carbon nanotubes
A method is provided for producing germanium nanowires encapsulated within multi-walled carbon nanotubes. The method includes the steps of performing chemical vapor deposition using a combined germanium and carbon source having a general formula of GeR (4-x) L x , where x=0, 1, 2, or 3; R is selected from a group consisting of alkyl, cycloalkyl or aryl and L=hydrogen, halide or alkoxide and growing germanium nanowires encapsulated within multi-walled carbon nanotubes on a substrate. A reaction product of that method or process is also provided.
1. A reaction product resulting from a process of growing germanium nanowires encapsulated within multi-walled carbon nanotubes;
said reaction product being characterized by comprising greater than 60 weight percent germanium nanowires encapsulated in multi-walled carbon nanotubes and less than 40 weight percent amorphous material in the absence of performing any purification step, wherein said multi-walled carbon nanotubes form a sheath having a thickness of about 5 to about 10 nm.
2. The reaction product of claim 1 , wherein said reaction product is characterized by comprising greater than 70 weight percent germanium nanowires encapsulated in multi-walled carbon nanotubes and less than 30 weight percent amorphous material in the absence of performing any purification step.
3. The reaction product of claim 1 , wherein said reaction product is characterized by comprising greater than 80 weight percent germanium nanowires encapsulated in multi-walled carbon nanotubes and less than 20 weight percent amorphous material in the absence of performing any purification step.
4. The reaction product of claim 1 , wherein said reaction product is characterized by comprising greater than 90 weight percent germanium nanowires encapsulated in multi-walled carbon nanotubes and less than 10 weight percent amorphous material in the absence of performing any purification step.
5. The reaction product of claim 1 , wherein said reaction product is characterized by comprising greater than 95 weight percent germanium nanowires encapsulated in multi-walled carbon nanotubes and less than 5 weight percent amorphous material in the absence of performing any purification step.
6. The reaction product of claim 1 wherein said nanowire has a length of between about 6 and about 50 μm and an overall diameter of between about 200 and about 300 nm.
7. The reaction product of claim 1 wherein said nanowire has a length of between about 10 and about 50 μm and an overall diameter of between about 200 and about 300 nm.
8. The reaction product of claim 1 wherein said nanowire has a length of between about 20 and about 50 μm and an overall diameter of between about 200 and about 300 nm.
9. The reaction product of claim 8 wherein said nanowire includes between about 95 and about 100 weight percent germanium and between about 5 and about 0 weight percent carbon.
10. The nanowire of claim 1 wherein said core includes between about 50 and about 99 weight percent germanium and between about 50 and about 1 weight percent iron.
11. A reaction product resulting from the process of:
performing chemical vapor deposition using a combined germanium and carbon source having a general formula of GeR (4-x) L x , where x=0, 1, 2, or 3; R is selected from a group consisting of alkyl, cycloalkyl or aryl and L=hydrogen, halide or alkoxide; and
growing germanium nanowires encapsulated within multi-walled carbon nanotubes;
said reaction product being characterized by comprising greater than 60 weight percent germanium nanowires encapsulated in multi-walled carbon nanotubes and less than 40 weight percent amorphous material in the absence of performing any purification step wherein said reaction product has a germanium to carbon ratio of 5:1.
12. The reaction product of claim 1 , wherein said reaction product has a germanium to carbon ratio of 9:1.