Image pickup device and manufacturing method for image pickup device by stacking/bonding of crystalline silicon substrates
A semiconductor device having a stacked structure formed by stacking a thinned first silicon substrate and a second silicon substrate supporting the first silicon substrate, wherein the first silicon substrate includes a first surface with a crystal surface orientation of (100) or (110) and a second surface opposite to the first surface, the second silicon substrate includes a third surface and a fourth surface that is opposite to the third surface and from which a silicon surface with a crystal surface orientation (111) is exposed, and wherein the semiconductor device is formed by etching silicon with a predetermined thickness in a direction from the first surface toward the second surface to make the first silicon substrate to be thinned, after bonding the first silicon substrate and the second silicon substrate in a state where the second surface and the third surface facing the second surface are bonded with each other.
1. A semiconductor device having a stacked structure formed by stacking a first silicon substrate that is thinned and a second silicon substrate that supports the first silicon substrate,
wherein the first silicon substrate includes a first surface with a crystal surface orientation of (100) or (110) and a second surface opposite to the first surface,
wherein the second silicon substrate includes a third surface and a fourth surface that is opposite to the third surface and from which a silicon surface with a crystal surface orientation (111) is exposed, and
wherein the semiconductor device is formed by etching silicon with a predetermined thickness in a direction from the first surface toward the second surface to make the first silicon substrate to be thinned, after bonding the first silicon substrate and the second silicon substrate in a state where the second surface and the third surface facing the second surface are bonded with each other.
2. The semiconductor device according to claim 1 , further comprising a pixel unit in which a plurality of pixels are arranged in a two-dimensional matrix, wherein the plurality of pixels are formed at the second surface side of the first silicon substrate, and each of the plurality of pixels has a photoelectric conversion unit that generates a charge signal corresponding to an incident light.
3. The semiconductor device according to claim 2 , further comprising a processing circuit that is formed at the third surface side of the second silicon substrate and includes circuit elements used for performing predetermined processes to pixel signals based on the charge signals generated by the photoelectric conversion units of the pixels in the pixel unit.
4. The semiconductor device according to claim 3 , further comprising connection portions that are formed at the second surface side of the first silicon substrate and the third surface side of the second silicon substrate, wherein the connection portions are formed to connect circuit elements in the pixel unit and the corresponding circuit elements in the processing circuit.
5. The semiconductor device according to claim 1 , wherein an adhesive layer is formed between the second surface of the first silicon substrate and the third surface of the second silicon substrate facing the second surface, and the adhesive layer is formed to bond the second surface of the first silicon substrate and the third surface of the second silicon substrate.