Semiconductor device and method of manufacturing semiconductor device
A method of manufacturing a semiconductor device, including implanting hydrogen atoms from a second principal surface of a semiconductor substrate, forming a plurality of second semiconductor layers that each have a carrier concentration higher than that of the first semiconductor layer and that have carrier concentration peak values at different depths from the second principal surface of the semiconductor substrate, applying a heat treatment process to promote generation of donors from the hydrogen atoms, implanting an impurity from the second principal surface of the semiconductor substrate, forming a third semiconductor layer in the semiconductor substrate at the second principal surface thereof, and applying another heat treatment process to locally heat the semiconductor substrate, so as to reduce the carrier concentration at an interface between the third semiconductor layer and the second semiconductor layer adjacent to the third semiconductor layer.
1. A semiconductor device, comprising:
a first semiconductor layer of a first conductivity type, a front surface device structure formed on a first principal surface of the first semiconductor layer;
a plurality of second semiconductor layers of the first conductivity type, formed in the first semiconductor layer at a second principal surface thereof, each having a donor concentration higher than that of the first semiconductor layer, the donor concentration having respective peak values thereof at different depths from the second principal surface of the first semiconductor layer; and
a third semiconductor layer of a second conductivity type formed in the first semiconductor layer at the second principal surface thereof, a distance between the third semiconductor layer and the first principal surface of the semiconductor layer being larger than a distance between each second semiconductor layer and the first principal surface of the semiconductor layer, wherein
each second semiconductor layer of the plurality of second semiconductor layers, except for a first second semiconductor layer adjacent to the third semiconductor layer, has a donor concentration distribution in which the donor concentration of said each second semiconductor layer decreases from the peak value thereof toward the third semiconductor layer, to thereby consecutively form a first slope and a second slope connected at a predetermined position, donor concentrations on the second slope being smaller than those on the first slope, and
a donor or acceptor concentration at a first interface between the first second semiconductor layer and the third semiconductor layer is not larger than a donor concentration at a second interface between the first second semiconductor layer and another one of the second semiconductor layers adjacent to the first second semiconductor layer, the first interface being at a depth position where the donor concentration of the first second semiconductor layer and the acceptor concentration of the third semiconductor layer are substantially the same.
2. The semiconductor device according to claim 1 , wherein the donor concentration at the first interface is less than a donor concentration at a third interface between yet another one of the second semiconductor layers closest to the first semiconductor layer and one of the second semiconductor layers adjacent to the yet another one second semiconductor layer.
3. The semiconductor device according to claim 1 , wherein a peak value of a acceptor concentration of the third semiconductor layer is at least five times of the acceptor concentration at the first interface.
4. The semiconductor device according to claim 1 , wherein the front surface device structure includes:
a first semiconductor region of the second conductivity type, formed in the first semiconductor layer at the first principal surface thereof, a second semiconductor region of the first semiconductor type, formed in the first semiconductor region, a gate insulating film formed to contact a region of the first semiconductor region between the first semiconductor layer and the second semiconductor region, and a gate electrode formed on an opposite side of the first semiconductor region, to sandwich the gate insulating film with the first semiconductor region.
5. The semiconductor device according to claim 4 , further comprising:
a first electrode contacting the first semiconductor region and the second semiconductor region; and
a second electrode contacting the second principal surface of the first semiconductor layer.
6. A semiconductor device, comprising:
a first semiconductor layer of a first conductivity type;
a front surface device structure formed on a first principal surface of the first semiconductor layer;
a plurality of second semiconductor layers of the first conductivity type, formed in the first semiconductor layer at a second principal surface thereof, each having a donor concentration higher than that of the first semiconductor layer, the donor concentration having respective peak values thereof at different depths from the second principal surface of the first semiconductor layer; and
a third semiconductor layer of a second conductivity type formed in the first semiconductor layer at the second principal surface thereof, a distance between the third semiconductor layer and the first principal surface of the semiconductor layer being larger than a distance between each second semiconductor layer and the first principal surface of the semiconductor layer, wherein
each second semiconductor layer of the plurality of second semiconductor layers, except for a first second semiconductor layer adjacent to the third semiconductor layer, has a donor concentration distribution in which the donor concentration of said each second semiconductor layer decreases from the peak value thereof toward the third semiconductor layer, to thereby consecutively form a first slope and a second slope connected at a predetermined position, donor concentrations on the second slope being smaller than those on the first slope, and
a donor or acceptor concentration at an interface between the first second semiconductor layer and the third semiconductor layer is no smaller than the donor concentration of the first semiconductor layer, and is no larger than a donor concentration at another interface between the first second semiconductor layer and another one of the second semiconductor layers adjacent to the first second semiconductor layer, said interface between the first second semiconductor layer and the third semiconductor layer being at a depth position where the donor concentration of the first second semiconductor layer and the acceptor concentration of the third semiconductor layer are substantially the same.
7. The semiconductor device according to claim 6 , wherein a peak value of a acceptor concentration of the third semiconductor layer is at least five times of the acceptor concentration at the interface between the first second semiconductor layer and the third semiconductor layer.
8. The semiconductor device according to claim 6 , wherein the front surface device structure further includes:
a first semiconductor region of the second conductivity type, formed in the first semiconductor layer at the first principal surface thereof, a second semiconductor region of the first semiconductor type, formed in the first semiconductor region, a gate insulating film formed to contact a region of the first semiconductor region, between the first semiconductor layer and the second semiconductor region, and a gate electrode formed on an opposite side of the first semiconductor region, to sandwich the gate insulating film with the first semiconductor region.
9. The semiconductor device according to claim 8 , further comprising:
a first electrode contacting the first semiconductor region and the second semiconductor region; and
a second electrode contacting the second principal surface of the first semiconductor layer.