Monolithic integration techniques for fabricating photodetectors with transistors on same substrate
Examples of the various techniques introduced here include, but not limited to, a mesa height adjustment approach during shallow trench isolation formation, a transistor via first approach, and a multiple absorption layer approach. As described further below, the techniques introduced herein include a variety of aspects that can individually and/or collectively resolve or mitigate one or more traditional limitations involved with manufacturing PDs and transistors on the same substrate, such as above discussed reliability, performance, and process temperature issues.
1. A semiconductor device comprising:
a semiconductor substrate;
a transistor formed on said semiconductor substrate;
a photodetector formed on said semiconductor substrate;
contact plugs for the transistor, wherein said contact plugs for the transistor have at least two portions; and
contact plugs for the photodetector,
wherein a lower portion of the at least two portions of said contact plugs for the transistor is formed to be entirely below a bottom surface of a first interconnect layer for the transistor and are positioned to be electrically coupled and directly in physical contact with at least one of: the transistor's gate area, the transistor's source area, or the transistor's drain area, and
wherein a first group of said contact plugs for the photodetector are formed to be entirely below a bottom surface of a first interconnect layer for the photodetector and are positioned to be electrically coupled and directly in physical contact with a first doped region of the photodetector.
2. The device of claim 1 , wherein a top surface of said contact plugs for the photodetector is higher than the physical misalignment on the sidewall of said contact plugs for the transistor.
3. The device of claim 1 , wherein the contact plugs for the transistor include refractory metals formed during a middle-of-line (MOL) fabrication stage.
4. The device of claim 1 , wherein the contact plugs for the photodetector are mainly made of non-refractory metals from metal interconnect layers formed during a back-end-of-line (BEOL) fabrication stage, without any refractory metals from a middle-of-line (MOL) fabrication stage.
5. The device of claim 1 , wherein the transistor and the photodetector are formed at a different height on said semiconductor substrate.
6. The device of claim 1 , wherein a second group of said contact plugs for the photodetector are formed to be at least partially above the bottom surface of the first interconnect layer for the transistor and are positioned to be electrically coupled and directly in physical contact with a second doped region of the photodetector, the second doped region having a different polarity than the first doped region.
7. The device of claim 1 , wherein said contact plugs for the photodetector's P and N regions are of different materials from different BEOL metal levels.
8. The device of claim 1 , wherein said contact plugs for the transistor are made of materials comprise at least one of: tungsten, titanium, or titanium nitride.
9. The device of claim 1 , wherein said contact plugs for the photodetector are made of materials comprise interconnect metals including at least one of: copper or aluminum.
10. The device of claim 1 , wherein the photodetector includes a P-I-N structure having a highly-doped p-type semiconductor region, a highly-doped n-type semiconductor region, and an intrinsic photosensitive semiconductor region located between said p-type and n-type semiconductor regions,
wherein the intrinsic photosensitive semiconductor region comprises a stack of semiconductor materials including substrate semiconductor material with a first dielectric constant and a photosensitive material with a second dielectric constant, the second dielectric constant higher than the first dielectric constant.
11. The device of claim 10 , wherein a thickness ratio between the substrate semiconductor material and other semiconductor materials in the intrinsic photosensitive semiconductor region combined is greater than 1 to 5.
12. The device of claim 1 , further comprising:
a select number of dummy fill shapes about a size of the transistor, wherein the dummy fill shapes about the size of the transistor are formed at a same height as the transistor; and
a select number of dummy fill shapes about a size of the photodetector, wherein the dummy fill shapes about the size of the photodetector are formed at the same height as the photodetector.
13. The device of claim 1 , wherein a top surface of a light absorption material of the photodetector is higher than a bottom surface of a lowest layer of metal interconnects for the transistor.
14. The device of claim 1 , wherein the photodetector includes a light absorption region with a physical structure that has a sidewall misalignment, which is resulted from two or more separate material forming processes growing a substantially same material.
15. The device of claim 1 , wherein the photodetector includes a mirror structure including metal for reducing a thickness of a light absorption region of the photodetector.
16. A semiconductor device comprising:
a semiconductor substrate;
a transistor formed on said semiconductor substrate;
a photodetector formed on said semiconductor substrate; and
contact plugs for the photodetector,
wherein a top surface of at least a portion of said contact plugs for the photodetector is at a same horizontal level as the top surface of a first interconnect layer for the transistor, and
wherein the first interconnect layer refers to the lowest interconnect layer.
17. The device of claim 16 , wherein the transistor and the photodetector are formed at a different height on said semiconductor substrate.
18. The device of claim 1 , wherein said contact plugs for the transistor have at least two portions that are formed from separate semiconductor material forming processes, and wherein a sidewall of said contact plugs for the transistor includes a physical misalignment.
19. The device of claim 1 , wherein said contact plugs for the photodetector are formed from a single material forming process.
20. The device of claim 1 , wherein the photodetector is formed on a lower surface than the transistor.