Ruthenium compound, preparation method therefor, precursor composition for film deposition containing same, and method for depositing film by using same
The present disclosure relates to a novel ruthenium compound, a method for preparing the ruthenium compound, a precursor composition for depositing a ruthenium-containing film including the ruthenium compound, and a method for depositing a ruthenium-containing film by using the precursor composition.
1. A ruthenium compound, represented by the following Chemical Formula 1:
wherein in the above Chemical Formula 1,
each of R 1 to R 4 independently is H, or a member selected from the group consisting of: methyl group; ethyl group; iso-propyl group; and, tert-butyl group; and
n is an integer of from 0 to 3.
2. The ruthenium compound of claim 1 , wherein the ruthenium compound includes a member selected from the group consisting of (p-cymene)(1,3-butadiene)Ru, (p-cymene)(isoprene)Ru, (p-cymene)(2,5-dimethyl-1,3-hexadiene)Ru, and (p-cymene)(1,5-hexadiene)Ru.
3. A method for preparing a ruthenium compound of claim 1 , comprising:
reacting a mixture including a [RuX 2 (p-cymene)]z compound represented by the following Chemical Formula 2, a carbonate salt of an alkali metal represented as M 2 CO 3 , and a diene neutral ligand represented by the following Chemical Formula 3 in an organic solvent including a primary alcohol or secondary alcohol having 5 or less carbon atoms, as shown in the following Reaction Formula 1, to obtain a ruthenium compound represented by the following Chemical Formula 1:
wherein in the above Formulas,
M includes Li, Na, or K,
X includes Cl, Br, or I, and
R 1 to R 4 , and n are the same as defined in claim 1 .
4. The method for preparing a ruthenium compound of claim 3 , wherein the primary alcohol or secondary alcohol includes a member selected from the group consisting of methanol, ethanol, n-propyl alcohol, iso-propyl alcohol, n-butanol, iso-butanol, n-pentanol, iso-pentanol, and combinations thereof.
5. A precursor composition for depositing a ruthenium-containing film, comprising a container including the ruthenium compound of claim 1 .
6. A method for depositing a ruthenium-containing film, comprising: depositing the precursor composition of claim 5 to form a ruthenium-containing film.
7. The method for depositing a ruthenium-containing film of claim 6 , wherein the precursor composition is deposited by a metal organic chemical vapor deposition (MOCVD) method or an atomic layer deposition (ALD) method.
8. A method for preparing a ruthenium compound of claim 2 , comprising:
reacting a mixture including a [RuX 2 (p-cymene)] 2 compound represented by the following Chemical Formula 2, a carbonate salt of an alkali metal represented as M 2 CO 3 , and a diene neutral ligand represented by the following Chemical Formula 3 in an organic solvent including a primary alcohol or secondary alcohol having 5 or less carbon atoms, as shown in the following Reaction Formula 1, to obtain a ruthenium compound represented by the following Chemical Formula 1:
wherein in the above Formulas,
M includes Li, Na, or K,
X includes Cl, Br, or I, and
R 1 to R 4 , and n are the same as defined in claim 1 .
9. The method for preparing a ruthenium compound of claim 8 , wherein the primary alcohol or secondary alcohol includes a member selected from the group consisting of methanol, ethanol, n-propyl alcohol, iso-propyl alcohol, n-butanol, iso-butanol, n-pentanol, iso-pentanol, and combinations thereof.
10. A precursor composition for depositing a ruthenium-containing film, comprising a container including the ruthenium compound of claim 2 .
11. A method for depositing a ruthenium-containing film, comprising: depositing the precursor composition of claim 10 to form a ruthenium-containing film.
12. The method for depositing a ruthenium-containing film of claim 11 , wherein the precursor composition is deposited by a metal organic chemical vapor deposition (MOCVD) method or an atomic layer deposition (ALD) method.