Semiconductor device and manufacturing method thereof
View Patent ↗A resistor whose characteristic value can be changed without requiring a photolithography process again is provided. The resistor includes a plurality of first resistor units which is connected serially to each other and a second resistor unit which is connected in parallel to part of the first resistor units. Then, after the measurement of a semiconductor integrated circuit, the second resistor unit is electrically disconnected as necessary. The first resistor units may be either a unit including a single resistor or may be a unit including a plurality of resistors.
1. A semiconductor device comprising:
a first metal layer, a second metal layer, a third metal layer, a fourth metal layer and a fifth metal layer, each provided in a first direction; and
a first resistor, a second resistor, a third resistor, a fourth resistor and a fifth resistor, each provided in a second direction orthogonal to the first direction,
wherein a part of the first metal layer is connected to one end of the first resistor, the other end of the first resistor is connected to a first part of the second metal layer, a second part of the second metal layer is connected to one end of the second resistor, the other end of the second resistor is connected to a first part of the third metal layer, a second part of the third metal layer is connected to one end of the third resistor, the other end of the third resistor is connected to a first part of the fourth metal layer, a second part of the fourth metal layer is connected to one end of the fourth resistor, the other end of the fourth resistor is connected to a first part of the fifth metal layer, a second part of the fifth metal layer is connected to one end of the fifth resistor, and the other end of the fifth resistor is connected to a third part of the third metal layer.
2. The semiconductor device according to claim 1 ,
wherein an impurity in the first to fifth resistors is selected from the group of phosphorus, arsenic and boron.
3. The semiconductor device according to claim 1 ,
wherein the first to fifth resistors have lower crystallinity than the first to fifth metal layers.
4. The semiconductor device according to claim 1 ,
wherein a resistivity of the first to fifth resistors is 100 times or more than a resistivity of the first to fifth metal layers.
5. The semiconductor device according to claim 1 ,
wherein a portion of the third metal layer is configured to be disconnected.
6. A semiconductor device comprising:
a substrate;
a first metal layer, a second metal layer, a third metal layer, a fourth metal layer and a fifth metal layer over the substrate, each provided in a first direction; and
a first resistor, a second resistor, a third resistor, a fourth resistor and a fifth resistor, each provided in a second direction orthogonal to the first direction,
wherein a part of the first metal layer is connected to one end of the first resistor, the other end of the first resistor is connected to a first part of the second metal layer, a second part of the second metal layer is connected to one end of the second resistor, the other end of the second resistor is connected to a first part of the third metal layer, a second part of the third metal layer is connected to one end of the third resistor, the other end of the third resistor is connected to a first part of the fourth metal layer, a second part of the fourth metal layer is connected to one end of the fourth resistor, the other end of the fourth resistor is connected to a first part of the fifth metal layer, a second part of the fifth metal layer is connected to one end of the fifth resistor, and the other end of the fifth resistor is connected to a third part of the third metal layer, and
wherein the substrate is selected from the group of a glass substrate, a quartz substrate, a resin substrate, and a metal substrate.
7. The semiconductor device according to claim 6 ,
wherein the first to fifth resistors have lower crystallinity than the first to fifth metal layers.
8. The semiconductor device according to claim 6 ,
wherein a resistivity off the first to fifth resistors is 100 times or more than a resistivity of the first to fifth metal layers.
9. The semiconductor device according to claim 6 ,
wherein a portion of the third metal layer is configured to be disconnected.