Method for designing and manufacturing an integrated circuit, system for carrying out the method, and system for verifying an integrated circuit

1. A method of manufacturing an integrated circuit, comprising:

providing a data file that includes a scaling enhanced circuit layout; and

providing a first standard cell layout using a plurality of design rules and the data file,

wherein the scaling enhanced circuit layout includes a design rule violation layer that violates at least one of the plurality of design rules, and

wherein the first standard cell layout includes:

a first layout region of the first standard cell layout corresponding to the data file and including the design rule violation layer, and

a second layout region of the first standard cell layout using the plurality of design rules;

creating a layout of the integrated circuit, the layout of the integrated circuit comprising the first standard cell layout including the first layout region that includes design elements that violate at least one of the plurality of design rules, and the second layout region,

creating a plurality of photolithographic masks using the layout of the integrated circuit; and

creating the integrated circuit using the plurality of photolithographic masks,

wherein creating the layout of the integrated circuit comprises using a netlist and a standard cell library including the first standard cell layout, the netlist comprising a plurality of instances, their functions and interconnections between the instances.

2. The method of claim 1 , further comprising checking the design rules of the first standard cell layout using a design rule checker,

wherein the checking the design rules of the first standard cell layout includes processing first layout region as if the first layout region satisfies the design rules by skipping the checking the first layout region of the first standard cell layout or ignoring any design rule violations of the first layout region of the first standard cell layout.

3. The method of claim 1 , wherein the scaling enhanced circuit layout includes a marker layer.

4. The method of claim 1 , further comprising arranging the scaling enhanced circuit layout in the first layout region of the first standard cell layout.

5. The method of claim 4 , wherein the data file provides a fixed size of elements of the first layout region.

6. The method of claim 1 , further comprising providing a second standard cell layout that is different from the first standard cell layout, wherein the second standard cell layout includes:

a first layout region of the second standard cell layout corresponding to the data file; and

a second layout region of the second standard cell layout conforming to the plurality of design rules.

7. The method of claim 6 , wherein the first layout region of the first standard cell layout and the first layout region of the second standard cell layout comprise the same layout.

8. The method of claim 1 , further comprising designing a logic block layout that includes the first standard cell layout,

wherein the first standard cell layout includes the scaling enhanced circuit layout, and

the scaling enhanced circuit layout is arranged in a partial region of the logic block layout.

9. The method of claim 8 , further comprising:

defining a design rule violation requisite region in a part of a standard cell;

designing the design rule violation layer through optimization of a process of manufacturing the design rule violation requisite region; and

designing the scaling enhanced circuit layout that includes the design rule violation layer.

10. The method of claim 9 , further comprising:

designating the scaling enhanced circuit layout as a golden scaling enhanced layout; and

checking whether the scaling enhanced circuit layout included in the logic block layout is changed in a process of designing the first standard cell layout using the golden scaling enhanced layout.

11. The method of claim 9 , wherein the data file graphically represents the scaling enhanced circuit layout.

12. The method of claim 1 , wherein the second layout region of the first standard cell layout is positioned in the vicinity of the first layout region of the first standard cell layout.

13. The method of claim 1 , wherein the data file is one of a GDS (Graphic Database System) file, a GDS instance file, and a hard macro file.

14. A method for manufacturing an integrated circuit, comprising:

providing a first standard cell layout including a first layout region and a second layout region, the first layout region comprising a first scaling enhanced circuit layout and a marker layer identifying the location of the first scaling enhanced circuit layout;

then, designing a logic block layout that includes a plurality of standard cell layouts including the first standard cell layout;

then, updating the logic block layout through replacement of the first scaling enhanced circuit layout in the logic block layout by a second scaling enhanced circuit layout;

then, creating a plurality of photolithographic masks using the logic block layout that includes the first standard cell layout including the first layout region that includes the second scaling enhanced circuit layout and the second layout region; and

then, creating the integrated circuit using the plurality of photolithographic masks,

wherein designing the logic block layout comprises using a netlist and a standard cell library including the first standard cell layout, the netlist comprising a plurality of instances, their functions and interconnections between the instances, and

wherein the second scaling enhanced circuit layout violates a design rule.

15. The method for manufacturing an integrated circuit of claim 14 ,

wherein the second layout region of the first standard cell layout conforms to the design rule.

16. The method for manufacturing an integrated circuit of claim 15 , wherein the first scaling enhanced circuit layout is provided in the form of a GDS (Graphic Database System) file, a GDS instance file, or a hard macro file.

17. The method for manufacturing an integrated circuit of claim 14 , wherein the updating the logic block layout includes removing the first scaling enhanced circuit layout from a first position included in the logic block layout, and arranging the second scaling enhanced circuit layout in the first position.

18. The method for manufacturing an integrated circuit of claim 14 , wherein updating the logic block layout includes confirming a position of the first scaling enhanced circuit layout using the marker layer.

19. The method of claim 1 ,

wherein the second layout region of the first standard cell layout of the standard cell library is variable and restricted to conforming to the plurality of design rules, and

wherein creating the integrated circuit comprises patterning layers formed on a substrate using the plurality of photolithographic masks.

20. The method of claim 19 , wherein the first standard cell layout comprises a first definition of the first layout region that is fixed and comprises a second definition of the second layout region that is variable.